DS21603 Rev. E-3 1 of 2 2N5088/89/MMBT5088/89
2N5088/89 / MMBT5088/89
NPN SMALL SIGNAL TRANSISTOR
·Low Noise High Gain
·Epitaxial Planar Die Construction
·Available in both Through-Hole and Surface
Mount Packages
·General Purpose, Low Noise Amplifier
Notes: 1. Valid provided that leads at a distance of 2.0mm from body are kept at specified ambient (TO-92).
2. Device mounted on FR-4 PCB 40 x 40 x 1.5mm..
3. Pulse test: Pulse width l300µs, duty cycle l2%.
Features
Maximum Ratings @ TA= 25°C unless otherwise specified
A
E
JL
M
BC
H
G
D
K
TOP VIEW
C
E
B
Characteristic Symbol 2N/MMBT5088 2N/MMBT5089 Unit
Collector-Emitter Voltage VCEO 30 25 V
Collector- Base Voltage VCBO 35 30 V
Emitter- Base Voltage VEBO 4.5 V
Collector Current IC100 mA
Total Device Dissipation
TO-92 (Note 1)
SOT-23 (Note 2)
Pd625
350
mW
Thermal Resistance, Junction to Ambient
TO-92 (Note 1)
SOT-23 (Note 2)
RqJA 200
357
K/W
Thermal Resistance, Junction to Collector RqJC 83.3 K/W
Operating and Storage Temperature Tj,T
STG -55 to +150 °C
Mechanical Data
·Case: TO-92/SOT-23, Plastic
·Leads/Terminals: Solderable per MIL-STD-202,
Method 208
·Terminal Connections: See Diagram
·Marking: TO-92 Type Number
SOT-23 MMBT5088 1Q
MMBT5089 1R
·Approx Weight: TO-92 0.18 grams
SOT-23 0.008 grams
MMBT5088 / MMBT5089
2N5088 / 2N5089
D
CBE
HH
BOTTOM
VIEW
EA
B
C
G
TO-92
Dim Min Max
A4.32 4.83
B4.32 4.78
C12.50 15.62
D0.36 0.56
E3.15 3.94
G2.29 2.79
H1.14 1.40
All Dimensions in mm
SOT-23
Dim Min Max
A0.37 0.51
B1.19 1.40
C2.10 2.50
D0.89 1.05
E0.45 0.61
G1.78 2.05
H2.65 3.05
J0.013 0.15
K0.89 1.10
L0.45 0.61
M0.076 0.178
All Dimensions in mm
DS21603 Rev. E-3 2 of 2 2N5088/89/MMBT5088/89
Electrical Characteristics @ TA= 25°C unless otherwise specified
Characteristic Symbol Min
5088
Max
5088
Min
5089
Max
5089 Unit Test Condition
Collector to Emitter Breakdown Voltage (Note 3) V(BR)CEO 30—25— V
IC= 1.0mA, IB= 0
Collector to Base Breakdown Voltage V(BR)CBO 35—30— V
IC= 100µA, IE= 0
Emitter Cutoff Current IEBO —50
100 —50
100 nA VEB(OFF) = 3.0V, IC= 0
VEB(OFF) = 4.5V, IC= 0
Collector Cutoff Current ICEX —50
———
50 nA VCB = 20V, IE= 0
VCB = 15V, IE= 0
DC Current Gain
(Note 3)
hFE
300
350
300
900
—
—
400
450
400
1200
—
—
—
IC = 100µA, VCE = 5.0V
IC= 1.0mA, VCE = 5.0V
IC= 10mA, VCE = 5.0V
Collector-Emitter Saturation Voltage (Note 3) VCE(SAT) — 0.5 — 0.5 V IC= 10mA, IB= 1.0mA
Base-Emitter “ON” Voltage (Note 3) VBE(ON) — 0.8 — 0.8 V IC= 10mA, VCE = 5.0V
Collector to Base Capacitance Ccb — 4.0 — 4.0 pF VCB = 5.0V, IE= 0
f = 100kHz
Emitter to Base Capacitance Ceb — 10 — 10 pF VBE = 0.5V, IC= 0
f = 100kHz
Small Signal Current Gain hfe 350 1400 450 1800 — IC= 1.0mA, VCE = 5.0V,
f = 1.0kHz
Current Gain Bandwidth Product fT50 — 50 — MHz
IC= 500µA, VCE = 5.0V,
RS= 10kW
f = 20MHz
Noise Figure NF — 3.0 — 2.0 dB
IC= 100µA, VCE = 5.0V,
RS= 10kW,
f = 10Hz - 15.7kHz
Notes: 1. Valid provided that leads at a distance of 2.0mm from body are kept at specified ambient (TO-92).
2. Device mounted on FR-4 PCB 40 x 40 x 1.5mm..
3. Pulse test: Pulse width l300µs, duty cycle l2%.
