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BFP620
1
2
3
4
Low Noise SiGe:C Bipolar RF Transistor
• Highly linear low noise RF transistor
• Provides outstanding performance
for a wide range of wireless applications
• Based on Infineon's reliable high volume
Silicon Germanium technology
• Ideal for CDMA and WLAN applications
• Collector design provides high linearity of
14.5 dBm OP1dB for low voltage application
• Maximum stable gain
Gms = 21.5 dB at 1.8 GHz
Gma = 11 dB at 6 GHz
• Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz
Outstanding noise figure NFmin = 1.3 dB at 6 GHz
• Accurate SPICE GP model enables effective
design in process
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP620 R2s 1=B 2=E 3=C 4=E - - SOT343
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BFP620
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= -55 °C
VCEO
2.3
2.1
V
Collector-emitter voltage VCES 7.5
Collector-base voltage VCBO 7.5
Emitter-base voltage VEBO 1.2
Collector current IC80 mA
Base current IB3
Total power dissipation1)
TS ≤ 95°C
Ptot 185 mW
Junction temperature TJ150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature TSt
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS 300 K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 2.3 2.8 - V
Collector-emitter cutoff current
VCE = 7.5 V, VBE = 0
VCE = 5 V, VBE = 0
ICES
-
-
-
0.001
10
0.04
µA
Collector-base cutoff current
VCB = 5 V, IE = 0
ICBO - 1 40 nA
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - 10 900
DC current gain
IC = 50 mA, VCE = 1.5 V, pulse measured
hFE 110 180 270 -
1TS is measured on the emitter lead at the soldering point to the pcb
2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 50 mA, VCE = 1.5 V, f = 1 GHz
fT- 65 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.12 0.2 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.22 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.46 -
Minimum noise figure
IC = 5 mA, VCE = 1.5 V, f = 1.8 GHz, ZS = ZSopt
IC = 5 mA, VCE = 1.5 V, f = 6 GHz, ZS = ZSopt
NFmin
-
-
0.7
1.3
-
-
dB
Power gain, maximum stable1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt , f = 1.8 GHz
Gms - 21.5 - dB
Power gain, maximum available1)
IC = 50 mA, VCE = 1.5 V, ZS = ZSopt,
ZL = ZLopt, f = 6 GHz
Gma - 11 - dB
Transducer gain
IC = 50 mA, VCE = 1.5 V, ZS = ZL = 50 Ω,
f = 1.8 GHz
f = 6 GHz
|S21e|2
-
-
20
9.5
-
-
dB
Third order intercept point at output2)
VCE = 2 V, IC = 50 mA, ZS=ZL=50 Ω, f = 1.8 GHz
IP3 - 25.5 - dBm
1dB compression point at output
IC = 50 mA, VCE = 2 V, ZS=ZL=50 Ω, f = 1.8 GHz
P-1dB - 14.5 -
1Gma = |S21e / S12e| (k-(k²-1)1/2), Gms = |S21e / S12e|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 150
TS
0
20
40
60
80
100
120
140
160
mW
200
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
1
10
2
10
3
10
K/W
RthJS
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
°C
tp
0
10
1
10
Ptotmax/ PtotDC
D = 0
0.005
0,01
0,02
0,05
0,1
0,2
0,5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 1 2 3 4 5 V7
VCB
0
0.05
0.1
0.15
0.2
0.25
0.3
pF
0.4
CCB
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Third order Intercept Point IP3 = ƒ (IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter, f = parameter
Third order Intercept Point IP3 =ƒ(IC)
(Output, ZS = ZL=50 Ω)
VCE = parameter, f = 900 MHz
0 10 20 30 40 50 60 70 80 mA 100
IC
0
3
6
9
12
15
18
21
dBm
27
IP3
0.8V
1.3V
1.8V
2.3V
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = Parameter in V
0 10 20 30 40 50 60 70 80 mA 100
IC
0
5
10
15
20
25
30
35
40
45
50
55
GHz
65
fT
0.3
0.5
0.8
1
1.3 to 2.3
Power gain Gma, Gms = ƒ(IC)
VCE = 1.5V
f = Parameter in GHz
0 10 20 30 40 50 60 70 mA 90
IC
8
10
12
14
16
18
20
22
24
26
dB
30
G
0.9
1.8
2.4
3
4
5
6
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Power Gain Gma, Gms = ƒ(f),
|S21|² = f (f)
VCE = 1.5V, IC = 50mA
01234GHz 6
f
5
10
15
20
25
30
35
40
45
dB
55
G
|S21|²
Gms
Gma
Power gain Gma, Gms = ƒ (VCE)
IC = 50mA
f = Parameter in GHz
0.2 0.6 1 1.4 1.8 V2.6
VCE
-5
0
5
10
15
20
dB
30
G
0.9
1.8
2.4
3
4
5
6
Minimum noise figure NFmin = ƒ (IC)
VCE = 2 V, ZS = ZSopt
Minimum noise figure NFmin = ƒ(f)
VCE = 2V, ZS = ZSopt
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Source impedance for min.
noise figure vs. frequency
VCE = 2 V, IC = 6 mA / 50 mA
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SPICE GP Model
For the SPICE Gummel Poon (GP) model as well as for the S-parameters
(including noise parameters) please refer to our internet website
www.infineon.com/rf.models.
Please consult our website and download the latest versions before actually
starting your design. You find the BFP620 SPICE GP model in the internet
in MWO- and ADS-format, which you can import into these circuit simulation tools
very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC and high frequency simulations. The terminals of the
model circuit correspond to the pin configuration of the device. The model
parameters have been extracted and verified up to 15 GHz using typical devices.
The BFP620 SPICE GP model reflects the typical DC- and RF-performance
within the limitations which are given by the SPICE GP model itself. Besides the DC
characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise)
and intermodulation have been extracted.
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Package SOT343
2013-09-1310
BFP620
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
