2N5781
SILICON EPITAXIAL
PNP TRANSISTOR
General-Purpose types for Switching
and Linear-Amplifier Applications
FEATURES
• Low saturation voltages
• Maximum Safe area of operation curves
• High gain at high current
• High breakdown voltages
VCBO Collector – Base Voltage
VCER(BR) Collector – Emitter Breakdown Voltage RBE = 100Ω
VCEO(BR) Collector – Emitter Breakdown Voltage
VEBO Emitter – Base Voltage
ICContinuous Collector Current
IBContinuous Base Current
PTTotal Device Dissipation At Case Temperatures up to = 25°C
At Ambient Temperatures up to = 25°C
TJ, TSTG Operating Junction and Storage Temperature Range
-80V
-80V
-65V
-5V
-3.5A
-1A
10W
1W
–65 to +200°C
MECHANICAL DATA
Dimensions in mm (inches)
TO39 (TO205AD) Package
ABSOLUTE MAXIMUM RATINGS (TA= 25°C unless otherwise stated)
PIN 1 – Emitter PIN 2 – Base PIN 3 – Case
0.89
(0.035)
max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
1
2
3
0.74 (0.029)
1.14 (0.045)
The 2N5781 is intended for medium-power
switching and complementary-symmetry
audio amplifier applications.
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6659
Issue 1
2N5781
Parameter Test Conditions Min. Typ. Max. Unit
μA
mA
μA
mA
μA
μA
—
V
V
MHz
—
μs
°C/W
- 10
- 1.0
- 10
- 1.0
- 100
- 10
20 100
4
- 65
- 80
- 1.5
- 0.5
860
25
0.5
2.5
17.5
175
ICER Collector Cut-off Current
ICEX Collector Cut-off Current
ICEO Collector Cut-off Current
IEBO Emitter Cut-off Current
hFE* DC Current Gain
VCEO(BR)* Collector – Emitter Breakdown Voltage
VCER(BR)* Collector – Emitter Breakdown Voltage
VBE Base – Emitter Voltage
VCE(sat) Collector – Emitter Saturation Voltage
fTTransition Frequency
hfe Small Signal Common – Emitter
Current Gain
tON Saturated Switching Time
tOFF Turn-off Time
RθJC Thermal Resistance Junction – Case
RθJA Thermal Resistance Junction – Ambient
VCE = -65V
RBE = 100ΩTC= 150°C
VCE = - 75V VBE = -1.5V
RBE = 100ΩTC= 150°C
VCE = -50V IB= 0
VBE = - 5V IC= 0
VCE = -2V IC= -1.0A
VCE = -2V IC= -3.2A
IC=- 10mA IB= 0
IC= -10mA RBE = 100Ω
VCE = -2V IC= -1.0A
IC= -1.0A IB= - 0.1A
VCE = - 2V IC= - 0.1A
f = 4MHz
VCE = -2V IC= -0.1mA
f = 1.0kHz
VCC= -30V IB1 = IB2
IC= -1.0A IB= - 0.1A
NOTES
1. * Pulse Test: tp= 300μs, δ= 1.8%.
ELECTRICAL CHARACTERISTICS (TC= 25°C unless otherwise stated)
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Document Number 6659
Issue 1
