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ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FPF1C2P5BF07A F1 Module solution for PV-Application General Description Fairchild's brand-new DC-DC module is designed for a power stage that needs more compact design. And the Press-fit technology provides simple and reliable mounting. This module is optimized for the application such as solar inverter where a high efficiency and robust design are needed. Electrical Features * High Efficiency Package Code: F1 * Low Conduction and Switching losses * Low RDS(ON) : 90 m max. * Fast Recovery Body Diode * Built-in NTC for temperature monitoring Mechanical Features * Compact size : F1 Package * Press-fit contact technology Applications * Solar Inverter Certification * UL approved (E209204) Internal Circuit Diagram Absolute Maximum Ratings TC = 25C unless otherwise noted. Rating Units VDSS Symbol Drain-Source Voltage Description 650 V VGSS Gate-Source Voltage 20 V ID Continuous Drain Current @ TC = 25C 36 A @ TC = 80C 27 A Limited by TJ max. 156 A IDM Pulsed Drain Current IS Continuous Source-Drain Forward Current 36 A ISM Maximum Pulsed Source-Drain Forward Current 156 A PD Maximum Power Dissipation 250 W TJ Operating Junction Temperature -40 to +150 C (c)2014 Fairchild Semiconductor Corporation FPF1C2P5BF07A Rev. C2 @ TC = 25C 1 www.fairchildsemi.com FPF1C2P5BF07A F1 Module solution for PV-Application July. 2014 Symbol TC = 25C unless otherwise noted. (Continued) Description Rating Units -40 to +125 C 2500 V Module TSTG Storage Temperature VISO Isolation Voltage Iso._Material Internal Isolation Material FMOUNT Mounting Force per Clamp Weight @ AC 1MIN Al2O3 20 to 50 Typ. Creepage Clearance N 22 g Terminal to Heatshink 11.5 mm Terminal to Terminal 6.3 mm Terminal to Heatshink 10.0 mm Terminal to Terminal 5.0 mm Package Marking and Ordering Information Device Device Marking Package Packing Type Quantity / Tray FPF1C2P5BF07A FPF1C2P5BF07A F1 Tray 22 (c)2014 Fairchild Semiconductor Corporation FPF1C2P5BF07A Rev. C2 2 www.fairchildsemi.com FPF1C2P5BF07A F1 Module solution for PV-Application Absolute Maximum Ratings Symbol TC = 25oC unless otherwise noted. Parameter Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 1 mA 650 - - V IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS= 0 V - - 25 A IGSS Gate-Body Leakage Current, Forward VGS = 20 V, VDS= 0 V - - 2.5 A On Characteristics VGS(th) Gate-Source Threshold Voltage VGS = VDS, ID= 250 A - 3.8 - V RDS(ON) Static Drain-Source On-Resistance ID = 27 A, VGS = 10 V - - 90 m ID = 27 A, VGS = 10 V @TC = 125C - 135 - m ID = 47 A, VGS = 10 V - 76 - m VCC = 380 V ID = 27A VGS = 10 V RG(ON) = 51 RG(OFF) = 3 Inductive Load TC = 25 C - 192 - ns - 75 - ns - 140 - ns - 13 - ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time EON Turn-On Switching Loss per Pulse EOFF Turn-Off Switching Loss per Pulse td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time EON Turn-On Switching Loss per Pulse EOFF Turn-Off Switching Loss per Pulse Qg(total) Total Gate Charge RJC Thermal Resistance of Junction to Case VCC = 380 V ID = 27 A VGS = 10 V RG(ON) = 51 RG(OFF) = 3 Inductive Load TC = 125 C - 2.29 - mJ - 58 - J - 159 - ns - 82 - ns - 156 - ns - 13 - ns - 4.06 - mJ - 65 - J VDS = 380 V, VGS = 0V...+10 V, ID = 27 A - 155 - nC per Chip - - 0.5 C/W ISD = 27 A, VGS = 0 V - - 1.5 V ISD = 47 A, VGS = 0 V - 1.3 - V ISD = 27 A dIF/dt = 364 A/s - 109 - 39 - A - 2000 - nC - 179 - 55 - A - 4802 - nC Switching Characteristics : Body Diode VSD Source-Drain Diode Forward Voltage trr Reverse Recovery Time Irr Reverse Recovery Current Qrr Reverse Recovery Charge trr Reverse Recovery Time Irr Reverse Recovery Current Qrr Reverse Recovery Charge ISD = 27A dIF/dt = 320 A/s @TC = 125C ns ns NTC RNTC Rated Resistance TC = 25C - 10 - k TC = 100C - 936 - Tolerance TC = 25C -3 - +3 % PD Power Dissipation TC = 25C - - 20 mW BValue B-Constance B25/50 - 3450 - K B25/100 - 3513 - K (c)2014 Fairchild Semiconductor Corporation FPF1C2P5BF07A Rev. C2 3 www.fairchildsemi.com FPF1C2P5BF07A F1 Module solution for PV-Application Electrical Characteristics Fig 1. On-Region Characteristics Fig 2. On-Resistance Variation vs. Drain Current and Gate Voltage 160 0.20 140 120 100 RDS(ON) [], ID, Drain Current[A] VGS = 10 V VGS = 20 V 20 V 15 V 10 V 8V 6V 80 60 40 20 0 * Note: 1. 250s pulse test 0 5 10 15 Drain to Source On-Resistance VGS = 0.16 0.12 0.08 0.04 20 0 40 VDS, Drain-Source Voltage[V] Fig 3. On-Resistance Variation vs. Temperature TC = 25C TC = 80C TC = 125C 2.00 IS, Reverse Drain Current [A] Drain to Source On-Resistance RDS(ON) [], [Normalized] 160 150 1.75 1.50 1.25 1.00 0.75 0.50 -50 * Notes: 1. VGS = 10 V 2. ID = 27 A -25 0 25 50 75 100 125 150 TC, Case Temperature [C] 120 90 60 30 0 0.3 175 0.6 0.9 1.2 1.5 1.8 2.1 VSD, Body Diode Forward Voltage [V] Fig 5. Turn-Off Loss vs. Drain Current Fig 6. Turn-On Loss vs. Drain Current 6 100 * Notes: 1. with an inductive load 2. VDS = 380 V 3. VGS = 10 V 4. Rg(on) = 51 5. Rg(off) = 3 TC = 125C 60 40 TC = 25C 20 0 5 10 15 (c)2014 Fairchild Semiconductor Corporation FPF1C2P5BF07A Rev. C2 20 25 ID, Drain Current [A] 30 * Notes: 1. with an inductive load 2. VDS = 380 V 3. VGS = 10 V 4. Rg(on) = 51 5. Rg(off) = 3 5 Eon, Turn-on Loss [mJ] 80 Eoff, Turn-off Loss [uJ] 120 Fig 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.25 0 80 ID, Drain Current [A] 4 3 2 TC = 25C 1 0 35 4 TC = 125C 0 5 10 15 20 25 ID, Drain Current [A] 30 35 www.fairchildsemi.com FPF1C2P5BF07A F1 Module solution for PV-Application Typical Performance Characteristic Fig 7. Turn-Off Loss vs. Turn-Off Gate Resistor Values Fig 8. Transient Thermal Response Curve 160 400 1 0.5 TC = 125C ZJC(t), Thermal Response [C/W] ID, Drain Current[A] Eoff, Turn-off Loss [uJ] * Notes: VGS = 20V 1. with15V an inductive load 140 2. VDS = 380 V, ID = 27 A 10V 3. VGS = 10 V 300 120 4. Rg(on)8V= 51 6V 100 200 80 TC = 25C 60 100 40 20 0 0 0 * Note: 1. 250s pulse test 5 5 10 1510 20 15 25 Rg(off), Off Resistance [] , Drain-Source Voltage[V] 30 0.1 0.3 0.1 0.05 0.01 0.02 VDS t1 0.005 1E-3 1E-4 1E-5 2035 PDM 0.01 Single Pulse 1E-4 t2 * Notes : 1. ZJC(t) = 0.5 C/W Max. 2. Duty Factor, D = t1/t2 3. TJ - TC = PDM*ZJC(t) 1E-3 0.01 0.1 1 t1, Rectangular Pulse Duration [sec] Fig 9. Typical NTC Value vs. Temperature RNTC, NTC Resistance [k] 50 10 1 0.2 0 25 50 75 (c)2014 Fairchild Semiconductor Corporation FPF1C2P5BF07A Rev. C2 100 125 TC, Case Temperature [C] 150 5 www.fairchildsemi.com FPF1C2P5BF07A F1 Module solution for PV-Application Typical Performance Characteristic (Continued) FPF1C2P5BF07A F1 Module solution for PV-Application Internal Circuit Diagram DC+ DC+ M2 M4 S5 G5 G2 G4 S2 S4 OUT1 OUT2 OUT3 OUT1 OUT2 OUT3 M1 M3 G1 G3 S1 S3 RTN M5 T1 T2 RTN Package Outlines [mm] (c)2014 Fairchild Semiconductor Corporation FPF1C2P5BF07A Rev. C2 6 www.fairchildsemi.com FPF1C2P5BF07A F1 Module solution for PV-Application (c)2014 Fairchild Semiconductor Corporation FPF1C2P5BF07A Rev. C2 7 www.fairchildsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. "Typical" parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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