VRF2933 VRF2933MP 50V, 300W, 150MHz RF POWER VERTICAL MOSFET D The VRF2933 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation distortion. S S G M177 FEATURES * Improved Ruggedness V(BR)DSS = 170V * 70:1 Load VSWR Capability at Specified Operating Conditions * 300W with 22dB Typ. Gain @ 30MHz, 50V * Nitride Passivated * Excellent Stability & Low IMD * Refractory Gold Metallization * Common Source Configuration * Improved Replacement for SD2933 * Available in Matched Pairs * Thermally Enhanced Package * NOW 14% lower VDS(ON) * RoHS Compliant Maximum Ratings Symbol VDSS ID All Ratings: TC =25C unless otherwise specified Parameter Drain-Source Voltage VRF2933(MP) Unit 170 V Continuous Drain Current @ TC = 25C 42 A VGS Gate-Source Voltage 40 V PD Total Device dissipation @ TC = 25C 648 W TSTG TJ Storage Temperature Range -65 to 150 Operating Junction Temperature Max C 200 Static Electrical Characteristics Symbol Parameter Min Typ V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 VDS(ON) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) 1.8 Max 2.4 Unit V IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 2.0 mA IGSS Gate-Source Leakage Current (VDS = 20V, VDS = 0V) 2.0 A gfs Forward Transconductance (VDS = 10V, ID = 20A) 8 VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V Min Typ Max Unit 0.27 C/W mhos Symbol RJC Characteristic Junction to Case Thermal Resistance CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. Microsemi Website - http://www.microsemi.com 050-4941 Rev J 12 -2013 Thermal Characteristics Dynamic Characteristics Symbol VRF2933(MP) Parameter Test Conditions Min Typ CISS Input Capacitance VGS = 0V 740 Coss Output Capacitance VDS = 50V 400 Crss Reverse Transfer Capacitance f = 1MHz 32 Max Unit pF Functional Characteristics Symbol Parameter GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W D f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W CW f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W CW, 70:1 VSWR - All Phase Angles, 0.2 mSec X 20% Duty Factor Min Typ 20 25 Max dB 50 % No Degradation in Output Power Microsemi reserves the right to change, without notice, the specifications and information contained herein. Typical Performance Curves 30 55 45 25 6.5V ID, DRAIN CURRENT (A) 6V 35 30 5.5V 25 20 5V 15 4.5V 10 4V 3.5V 5 0 0 V 5 10 15 TJ= 25C 20 15 10 5 TJ= 125C 0 20 0 , DRAIN-TO-SOURCE VOLTAGE (V) DS(ON) FIGURE 1, Output Characteristics 2 4 6 8 VGS, GATE-TO-SOURCE VOLTAGE (V) FIGURE 2, Transfer Characteristics 100 ID, DRAIN CURRENT (A) 1.0E-8 Ciss 1.0E-9 C, CAPACITANCE (F) TJ= -55C Coss 1.0E-10 Crss BVdss Line ID, DRAIN CURRENT (A) 40 050-4941 Rev J 12 -2013 250s PULSE TEST<0.5 % DUTY CYCLE 7.5V 50 IDMax 10 Rds(on) PD Max TJ = 125C TC = 75C 1.0E-11 0 10 20 30 40 50 60 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 3, Capacitance vs Drain-to-Source Voltage Unit 1 1 10 100 800 VDS, DRAIN-TO-SOURCE VOLTAGE (V) FIGURE 4, Forward Safe Operating Area VRF2933(MP) D = 0.9 0.25 0.20 0.7 0.15 0.5 Note: 0.10 P DM ZJC, THERMAL IMPEDANCE (C/W) 0.30 0.3 t1 t2 0.05 t1 = Pulse Duration 0.1 t 0.05 0 10 Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C SINGLE PULSE 10 -5 10-3 -4 10 -1 10-2 1.0 RECTANGULAR PULSE DURATION (seconds) Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration T J (C ) T C (C) .076 .115 Z EXT .079 Dissipated Powe r (Watts ) .009 .080 .224 Z EXT are the external therma l impedances: Case to sink, sink to ambient, etc. Set to zero when modeling onl y the case to junction. FIGURE 5b, TRANSIENT THERMAL IMPEDANCE MODEL 500 Freq=30MHz 400 450 40V 350 300 250 200 150 400 350 250 200 150 100 100 50 50 0 0 0.5 1 1.5 2 2.5 Pout, INPUT POWER (WATTS PEP) Figure 6. POUT versus PIN 0 3 40V 300 0 2 4 6 8 10 Pout, INPUT POWER (WATTS PEP) Figure 7. POUT versus PIN 12 Table 1 - Typical Class AB Large Signal Input - Output Impedance Freq. (MHz) Zin Zout 2 23.6 - j 5.5 4.0 - j 0.1 13.5 7.6 - j 10.1 3.9 - j 0.6 27.1 3.5 - j 6.0 3.7 - j 1.1 40.7 2.5 - j 4.0 3.3 - j 1.5 65 1.95 - j 2.07 2.6 - j 1.9 100 1.8 - j 0.66 1.76 - j 0.2 150 1.78 + j 0.5 1.03 + j 1.7 ZIN - Gate shunted with 25 Idq = 250mA ZOL - Conjugate of optimum load for 300 Watts output at Vdd=50V 050-4941 Rev J 12-2013 OUTPUT POWER (WPEP) 450 50V Freq=65MHz 50V OUTPUT POWER (WPEP) 500 VRF2933(MP) 30 MHz Test Circuit 50V R1 Vbias C3 C4 C2 C5 C10 L2 + C11 Output C8 C1 C1 1800pF ATC100B ceramic C2, C3, C5, C9, C10, C12 0.1uF 100V C6 680 pF metal clad 500V mica C7 ARCO 467 mica trimmer C8 100 pF ATC 100E ceramic C4, C11 10uF 100V Electrolytic FB small ferrite bead ui =125 L1 20 nH 2t #18 0.188"d .2"l L2 38 nH - 2.5t #14 enam. .25" dia. C12 T2 VRF2933 C6 050-4941 Rev J 12-2013 L3 C9 FB R3 L1 T1 RF Input R4 + R2 C7 L3 2t #16 on 2x 267300081 .5" bead R1-R2 1k Ohm 1/4W R3 100 Ohm 1W R4 470 Ohm "low inductance" 3W T1 16:1 transforner 4t #20 teflon on RF Parts Co. T1/2 transformer core T2 9:1 transformer 3t #16 teflon on RF Parts Co. T1 transformer core VRF2933(MP) Adding MP at the end of P/N specifies a matched pair where VGS(TH) is matched between the two parts. VTH values are marked on the devices per the following table. Code Vth Range Code 2 Vth Range A 2.900 - 2.975 M 3.650 - 3.725 B 2.975 - 3.050 N 3.725 - 3.800 C 3.050 - 3.125 P 3.800 - 3.875 D 3.125 - 3.200 R 3.875 - 3.950 E 3.200 - 3.275 S 3.950 - 4.025 F 3.275 - 3.350 T 4.025 - 4.100 G 3.350 - 3.425 W 4.100 - 4.175 H 3.425 - 3.500 X 4.175 - 4.250 J 3.500 - 3.575 Y 4.250 - 4.325 K 3.575 - 3.650 Z 4.325 - 4.400 VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%. M177 (0.63 dia. SOE) Mechanical Data All dimensions are .005 A 4 1 .135 r F TYP MAX 0.225 0.230 0.235 B 0.265 0.270 0.275 0.860 0.865 0.870 D 1.130 1.135 1.140 E 0.545 0.550 0.555 F 0.003 0.005 0.007 G 0.098 0.103 0.108 C H 0.150 0.160 0.170 D I J 1.080 1.100 1.120 K 0.625 0.630 0.635 5 PIN 1 - DRAIN PIN 2 - GATE PIN 3 - SOURCE PIN 4 - SOURCE PIN 5 - SOURCE MIN A C B 2 DIM OK 3 E H G 0.280 I Seating Plane HAZARDOUS MATERIAL WARNING: The ceramic portion of the device below the lead plane is beryllium oxide. Beryllium oxide dust is highly toxic when inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or domestic waste. BeO substrate weight: 0.703g. Percentage of total module weight which is BeO: 9%. 050-4941 Rev J 12-2013 .125d nom J VRF2933(MP) 050-4941 Rev J 12-2013 The information contained in the document (unless it is publicly available on the Web without access restrictions) is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of Microsemi. If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such Agreement will also apply . This document and the information contained herein may not be modified, by any person other than authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. 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