The VRF2933 is a gold-metallized silicon n-channel RF power transistor de-
signed for broadband commercial and military applications requiring high power
and gain without compromising reliability, ruggedness, or inter-modulation
distortion.
FEATURES
• Improved Ruggedness V(BR)DSS = 170V
• 300W with 22dB Typ. Gain @ 30MHz, 50V
• Excellent Stability & Low IMD
• Common Source Confi guration
• Available in Matched Pairs
• NOW 14% lower VDS(ON)
• 70:1 Load VSWR Capability at Specifi ed Operating Conditions
• Nitride Passivated
• Refractory Gold Metallization
• Improved Replacement for SD2933
• Thermally Enhanced Package
• RoHS Compliant
Symbol Parameter VRF2933(MP) Unit
VDSS Drain-Source Voltage 170 V
IDContinuous Drain Current @ TC = 25°C 42 A
VGS Gate-Source Voltage ±40 V
PDTotal Device dissipation @ TC = 25°C 648 W
TSTG Storage Temperature Range -65 to 150 °C
TJOperating Junction Temperature Max 200
RF POWER VERTICAL MOSFET
Maximum Ratings All Ratings: TC =25°C unless otherwise specifi ed
Static Electrical Characteristics
Symbol Parameter Min Typ Max Unit
V(BR)DSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 100mA) 170 180 V
VDS(ON) On State Drain Voltage (ID(ON) = 20A, VGS = 10V) 1.8 2.4
IDSS Zero Gate Voltage Drain Current (VDS = 100V, VGS = 0V) 2.0 mA
IGSS Gate-Source Leakage Current (VDS = ±20V, VDS = 0V) 2.0 A
gfs Forward Transconductance (VDS = 10V, ID = 20A) 8 mhos
VGS(TH) Gate Threshold Voltage (VDS = 10V, ID = 100mA) 2.9 3.6 4.4 V
Microsemi Website - http://www.microsemi.com
050-4941 Rev J 12 -2013
Thermal Characteristics
Symbol Characteristic Min Typ Max Unit
RJC Junction to Case Thermal Resistance 0.27 °C/W
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
VRF2933
VRF2933MP
50V, 300W, 150MHz
D
SS
GM177
VRF2933(MP)
Dynamic Characteristics
Symbol Parameter Test Conditions Min Typ Max Unit
CISS Input Capacitance VGS = 0V 740
pF
Coss Output Capacitance VDS = 50V 400
Crss Reverse Transfer Capacitance f = 1MHz 32
Functional Characteristics
Symbol Parameter Min Typ Max Unit
GPS f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W 20 25 dB
Df1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W CW 50 %
f1 = 30MHz, VDD = 50V, IDQ = 250mA, Pout = 300W CW,
70:1 VSWR - All Phase Angles, 0.2 mSec X 20% Duty Factor No Degradation in Output Power
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
050-4941 Rev J 12 -2013
0
5
10
15
20
25
30
0 2 4 6 8
5
10
15
20
25
30
35
40
45
50
55
0 5 10 15 20
0
1
10
100
1 10 100 800
1.0E−11
1.0E−10
1.0E−9
1.0E−8
0 10 20 30 40 50 60
Ciss
VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1, Output Characteristics
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
TJ= 125°C
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 3, Capacitance vs Drain-to-Source Voltage
C, CAPACITANCE (F)
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 4, Forward Safe Operating Area
ID, DRAIN CURRENT (A)
5V
5.5V
4.5V
3.5V
6V
6.5V
7.5V
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 2, Transfer Characteristics
250s PULSE
TEST<0.5 % DUTY
CYCLE
TJ= -55°C
TJ= 25°C
Coss
Crss
Rds(on)
PD Max
TJ = 125°C
TC = 75°C
Typical Performance Curves
IDMax
4V
BVdss Line
0
0.05
0.10
0.15
0.20
0.25
0.30
10-5 10-4 10-3 10-2 10 1.0
-1
VRF2933(MP)
050-4941 Rev J 12-2013
Peak T
J
= P
DM
x Z
θJC + TC
Duty Factor D = t1/t2
t2
t1
P
DM
Note:
t1 = Pulse Duration
ZJC, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
Figure 5. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration
0
50
100
150
200
250
300
350
400
450
500
0 0.5 1 1.5 2 2.5 3
0
50
100
150
200
250
300
350
400
450
500
0 2 4 6 8 10 12
OUTPUT POWER (WPEP)
P
out, INPUT POWER (WATTS PEP)
Figure 6. POUT versus PIN
OUTPUT POWER (WPEP)
P
out, INPUT POWER (WATTS PEP)
Figure 7. POUT versus PIN
50V
40V
Freq=30MHz Freq=65MHz
FIGURE 5b, TRANSIENT THERMAL IMPEDANCE MODEL
Dissipated Powe r
(Watts )
TJ (°C ) T C (°C)
ZEXT are the external therma l
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling onl y
the case to junction.
ZEXT
.079 .076 .115
.009 .080 .224
Table 1 - Typical Class AB Large Signal Input - Output Impedance
ZIN - Gate shunted with 25 Idq = 250mA
ZOL - Conjugate of optimum load for 300 Watts output at Vdd=50V
Freq. (MHz) Zin Zout
2 23.6 - j 5.5 4.0 - j 0.1
13.5 7.6 - j 10.1 3.9 - j 0.6
27.1 3.5 - j 6.0 3.7 - j 1.1
40.7 2.5 - j 4.0 3.3 - j 1.5
65 1.95 - j 2.07 2.6 - j 1.9
100 1.8 - j 0.66 1.76 - j 0.2
150 1.78 + j 0.5 1.03 + j 1.7
0.3
D = 0.9
0.7
SINGLE PULSE
0.5
0.1
0.05
50V
40V
30 MHz Test Circuit
VRF2933(MP)
050-4941 Rev J 12-2013
L1 Output
C3 C12
C11
C10
C5
C6 C7
C8
C9
C1 1800pF ATC100B ceramic
C2, C3, C5, C9, C10, C12 0.1uF 100V
C6 680 pF metal clad 500V mica
C7 ARCO 467 mica trimmer
C8 100 pF ATC 100E ceramic
C4, C11 10uF 100V Electrolytic
FB small ferrite bead ui =125
L1 20 nH 2t #18 0.188"d .2"l
L2 38 nH - 2.5t #14 enam. .25" dia.
L3 2t #16 on 2x 267300081 .5" bead
R1-R2 1k Ohm 1/4W
R3 100 Ohm 1W
R4 470 Ohm "low inductance" 3W
T1 16:1 transforner 4t #20 teflon on
RF Parts Co. T1/2 transformer core
T2 9:1 transformer 3t #16 teflon on
RF Parts Co. T1 transformer core
Vbias
R1
R2
R4
L2
RF
Input
C2
T1
C1
R3 FB
L3
T2
+
50V
C4
+
VRF2933
VRF2933(MP)
050-4941 Rev J 12-2013
PIN 1 - DRAIN
PIN 2 - GATE
PIN 3 - SOURCE
PIN 4 - SOURCE
PIN 5 - SOURCE
M177 (0.63 dia. SOE) Mechanical Data
All dimensions are ±.005
DIM MIN TYP MAX
A 0.225 0.230 0.235
B0.265 0.270 0.275
C0.860 0.865 0.870
D1.130 1.135 1.140
E0.545 0.550 0.555
F0.003 0.005 0.007
G0.098 0.103 0.108
H0.150 0.160 0.170
I 0.280
J1.080 1.100 1.120
K 0.625 0.630 0.635
FE
G
HI
A
B
C
D
OK
J
.125d nom .135 r
Seating Plane
1
4
23
5
Adding MP at the end of P/N specifi es a matched pair where VGS(TH) is matched between the two parts. VTH values
are marked on the devices per the following table.
Code Vth Range Code 2 Vth Range
A 2.900 - 2.975 M 3.650 - 3.725
B 2.975 - 3.050 N 3.725 - 3.800
C 3.050 - 3.125 P 3.800 - 3.875
D 3.125 - 3.200 R 3.875 - 3.950
E 3.200 - 3.275 S 3.950 - 4.025
F3.275 - 3.350 T 4.025 - 4.100
G3.350 - 3.425 W 4.100 - 4.175
H 3.425 - 3.500 X4.175 - 4.250
J 3.500 - 3.575 Y 4.250 - 4.325
K 3.575 - 3.650 Z4.325 - 4.400
VTH values are based on Microsemi measurements at datasheet conditions with an accuracy of 1.0%.
HAZARDOUS MATERIAL WARNING: The ceramic portion of the device below the lead plane is beryllium oxide. Beryllium oxide dust is highly toxic when
inhaled. Care must be taken during handling and mounting to avoid damage to this area. These devices must never be thrown away with general industrial or
domestic waste. BeO substrate weight: 0.703g. Percentage of total module weight which is BeO: 9%.
VRF2933(MP)
050-4941 Rev J 12-2013
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delivery of the information, either expressly, by implication, inducement, estoppels or otherwise. Any license under such intellectual property rights must
be approved by Microsemi in writing signed by an offi cer of Microsemi.
Microsemi reserves the right to change the confi guration, functionality and performance of its products at anytime without any notice. This product has
been subject to limited testing and should not be used in conjunction with life-support or other mission-critical equipment or applications. Microsemi
assumes no liability whatsoever, and Microsemi disclaims any express or implied warranty, relating to sale and/or use of Microsemi products including li-
ability or warranties relating to fi tness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right.
Any performance specifi cations believed to be reliable but are not verifi ed and customer or user must conduct and complete all performance and other
testing of this product as well as any user or customers fi nal application. User or customer shall not rely on any data and performance specifi cations or
parameters provided by Microsemi. It is the customer’s and user’s responsibility to independently determine suitability of any Microsemi product and to
test and verify the same. The information contained herein is provided “AS IS, WHERE IS” and with all faults, and the entire risk associated with such
information is entirely with the User. Microsemi specifi cally disclaims any liability of any kind including for consequential, incidental and punitive damages
as well as lost profi t. The product is subject to other terms and conditions which can be located on the web at http://www.microsemi.com/legal/tnc.asp
