NTE377 (NPN) & NTE378 (PNP) Silicon Complementary Transistors Power Amp Driver, Output, Switch Description: The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type package designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. Features: D Low Collector-Emitter Saturation Voltage: VCE(sat) = 1V Max @ 8A D Fast Switching Speeds D Complementary Pairs Simplifies Designs Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Emitter-Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20A Total Power Dissipation, PD TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50W TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67W Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Case, RJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Thermal Resistance, Junction-to-Ambient, RJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75C/W Maximum Lead Temperature (During Soldering, 1/8" from case, 5sec), TL . . . . . . . . . . . . . . +275C Note 1. Pulse Width 6ms, Duty Cycle 50%. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics Collector Cutoff Current ICES VCE = 80V, VBE = 0 - - 10 A Emitter Cutoff Current IEBO VEB = 5V - - 100 A hFE VCE = 1V, IC = 2A, TJ = +25C 60 - - VCE = 1V, IC = 4A, TJ = +25C 40 - - ON Characteristics DC Current Gain Collector-Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 400mA - - 1.0 V Base-Emitter Saturation Voltage VBE(sat) IC = 8A, Ib = 800mA - - 1.5 V VCB = 10V, ftest = 1MHz - 130 - pF - 230 - pF - 50 - MHz - 40 - MHz - 300 - ns - 135 - ns - 500 - ns - 140 - ns - 100 - ns Dynamic Characteristics Collector Capacitance NTE377 Ccb NTE378 Gain Bandwidth Product NTE377 fT IC = 500mA, VCE = 10V, f = 20MHz NTE378 Switching Times Delay and Rise Time NTE377 td + tr IC = 5A, IB1 = 500mA NTE378 Storage Time ts Fall Time NTE377 tf IC = 5A, IB1 = IB2 = 500mA NTE378 .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base .100 (2.54) Emitter Collector/Tab