NTE377 (NPN) & NTE378 (PNP)
Silicon Complementary Transistors
Power Amp Driver, Output, Switch
Description:
The NTE377 (NPN) and NTE378 (PNP) are silicon complementary transistors in a TO220 type pack-
age designed for general purpose power amplification and switching such as output or driver stages
in applications such as switching regulators, converters, and power amplifiers.
Features:
DLow Collector–Emitter Saturation Voltage: VCE(sat) = 1V Max @ 8A
DFast Switching Speeds
DComplementary Pairs Simplifies Designs
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO 80V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, VEB 5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, IC
Continuous 10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak (Note 1) 20A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation, PD
TC = +25°C 50W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
TA = +25°C 1.67W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, RΘJC 2.5°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, RΘJA 75°C/W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL+275°C. . . . . . . . . . . . . .
Note 1. Pulse Width ≤ 6ms, Duty Cycle ≤ 50%.
Electrical Characteristics: (TC = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector Cutoff Current ICES VCE = 80V, VBE = 0 – – 10 µA
Emitter Cutoff Current IEBO VEB = 5V – – 100 µA
ON Characteristics
DC Current Gain hFE VCE = 1V, IC = 2A, TJ = +25°C 60 – –
VCE = 1V, IC = 4A, TJ = +25°C 40 – –
Collector–Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 400mA – – 1.0 V
Base–Emitter Saturation Voltage VBE(sat) IC = 8A, Ib = 800mA – – 1.5 V
Dynamic Characteristics
Collector Capacitance
NTE377 Ccb VCB = 10V, ftest = 1MHz –130 –pF
NTE378 –230 –pF
Gain Bandwidth Product
NTE377 fTIC = 500mA, VCE = 10V, f = 20MHz –50 –MHz
NTE378 –40 –MHz
Switching Times
Delay and Rise Time
NTE377 td + trIC = 5A, IB1 = 500mA –300 –ns
NTE378 –135 –ns
Storage Time tsIC = 5A, IB1 = IB2 = 500mA –500 –ns
Fall Time
NTE377 tf–140 –ns
NTE378 –100 –ns
.250
(6.35)
Max
.500 (12.7)
Max
.500 (12.7)
Min
.110 (2.79)
.420 (10.67)
Max
.070 (1.78) Max
Base
.100 (2.54) Collector/Tab
Emitter
.147 (3.75)
Dia Max
