HiPerFETTM Power MOSFETs IXFB80N50Q2 VDSS = ID25 = RDS(on) trr N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr 500V 80A 60m 250ns PLUS264TM( IXFB) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M 500 500 V V VGSS VGSM Continuous Transient 30 40 V V ID25 IDRMS IDM TC = 25C External lead limited TC = 25C, pulse width limited by TJM 80 75 320 A A A IAR EAR EAS TC = 25C TC = 25C TC = 25C 80 60 5.0 A mJ J dV/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns PD TC = 25C 960 W TJ -55 ... +150 C TJM Tstg 150 -55 ... +150 C C 300 260 C C 30...120/6.7...27 N / lbs TL TSOLD 1.6 mm (0.063 in.) from case for 10s Plastic body for 10s FC Mounting force Weight 10 g G S ( TAB ) G = Gate S = Source D = Drain TAB = Drain Features z Double metal process for low gate resistance z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect z Fast intrinsic rectifier Applications z z z z z Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. BVDSS VGS = 0 V, ID = 1mA 500 VGS(th) VDS = VGS, ID = 8mA 3.0 IGSS VGS = 30 V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 D DC-DC converters Switched-mode and resonant-mode power supplies, >500kHz switching DC choppers Pulse generation Laser drivers Advantages z V z 5.5 V 200 nA z PLUS 264TM package for clip or spring mounting Space savings High power density 100 A 5 mA TJ = 125C 60 m DS98958F(07/07) (c) 2007 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ IXFB80N50Q2 Symbol Test Conditions (TJ = 25C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 10V, ID = 0.5 * ID25, Note 1 50 65 S 15 nF 1610 pF 300 pF 29 ns Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz PLUS264TM (IXFB) Outline Crss td(on) Resistive Switching Times tr VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 25 ns td(off) RG = 1 (External) 60 ns 11 ns tf Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd 250 nC 80 nC 120 nC 0.13 RthJC RthCK Symbol Test Conditions IS VGS = 0V ISM VSD trr QRM IRM C/W 0.13 Source-Drain Diode C/W Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 80 A Repetitive; pulse width limited by TJM 320 A IF = IS, VGS = 0V, Note 1 1.5 V 250 ns IF = 25A, VGS = 0V -di/dt = 100 A/s VR = 100 V 1.4 C 12 A Note: 1. Pulse test, t 300s, duty cycle, d 2 %. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6771478 B2 7,005,734B2 IXFB80N50Q2 Fig. 1. Output Characte ristics @ 25 De g. C Fig. 2. Extended Output Characteristics @ 25 deg. C 200 80 VGS = 10V 8V 7V 70 160 60 140 I D - Amperes I D - Amperes VGS = 10V 9V 8V 180 50 6V 40 30 7V 120 100 80 60 6V 20 40 10 5V 20 5V 0 0 0 1 2 3 4 5 0 6 2 4 6 8 Fig. 3. Output Characteristics @ 125 Deg. C 12 14 16 18 20 Fig. 4. RDS(on) Norm alized to ID = 40A Value vs. Junction Tem perature 80 3 VGS = 10V 8V 7V 2.8 60 50 6V 40 30 20 VGS = 10V 2.6 RD S ( o n ) - Normalized 70 I D - Amperes 10 V D S - Volts V D S - Volts 5V 2.4 2.2 2 I D = 80A 1.8 1.6 I D = 40A 1.4 1.2 1 0.8 10 0.6 0 0.4 0 2 4 6 8 10 12 -50 -25 V D S - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Norm alized to ID = 40A Value vs. Drain Current Fig. 6. Drain Current vs. Case Tem perature 3 90 2.8 VGS = 10V External Lead Current Limit 80 TJ = 125C 2.6 70 2.4 I D - Amperes RD S ( o n ) - Normalized 0 2.2 2 1.8 1.6 60 50 40 30 1.4 20 1.2 TJ = 25C 10 1 0.8 0 0 40 80 120 160 200 I D - Amperes -50 -25 0 25 50 75 100 TC - Degrees Centigrade (c) 2007 IXYS CORPORATION, All rights reserved http://store.iiic.cc/ 125 150 IXFB80N50Q2 Fig. 8. Transconductance Fig. 7. Input Adm ittance 140 120 TJ = -40C 120 100 TJ = 125C 25C -40C 80 60 25C 80 g f s - Siemens I D - Amperes 100 60 125C 40 40 20 20 0 0 3.5 4.5 5.5 6.5 7.5 0 20 40 60 V G S - Volts Fig. 9. Source Current vs. Source-ToDrain Voltage 100 120 140 160 180 Fig. 10. Gate Charge 10 240 VDS = 250V I D = 40A I G = 10mA 9 200 8 7 160 VGS - Volts I S - Amperes 80 I D - Amperes 120 6 5 4 80 3 TJ = 125C 2 40 TJ = 25C 1 0 0 0.4 0.6 0.8 1 1.2 1.4 0 1.6 40 80 120 160 200 240 280 Q G - nanoCoulombs V S D - Volts Fig. 12. Maxim um Transient Therm al Im pedance Fig. 11. Capacitance 100000 1 C iss Z ( t h ) J C - C / W Capacitance - pF f = 1MHz 10000 C oss 1000 0.1 0.01 C rss 0.001 100 0 5 10 15 20 25 30 35 40 V D S - Volts 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_80N50Q2(95)7-20-07-F http://store.iiic.cc/