© 2007 IXYS CORPORATION, All rights reserved
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
Min. Typ. Max.
BVDSS VGS = 0 V, ID = 1mA 500 V
VGS(th) VDS = VGS, ID = 8mA 3.0 5.5 V
IGSS VGS = ±30 V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 100 μA
VGS = 0V TJ = 125°C 5 mA
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 60 mΩ
DS98958F(07/07)
HiPerFETTM
Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, Low Intrinsic RG
High dV/dt, Low trr
Features
zDouble metal process for low gate
resistance
zUnclamped Inductive Switching (UIS)
rated
zLow package inductance
- easy to drive and to protect
zFast intrinsic rectifier
Applications
zDC-DC converters
zSwitched-mode and resonant-mode
power supplies, >500kHz switching
zDC choppers
zPulse generation
zLaser drivers
Advantages
zPLUS 264TM package for clip or spring
mounting
zSpace savings
zHigh power density
IXFB80N50Q2 VDSS = 500V
ID25 = 80A
RDS(on) ≤≤
≤≤
≤ 60mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 250ns
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 500 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ500 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C80A
IDRMS External lead limited 75 A
IDM TC= 25°C, pulse width limited by TJM 320 A
IAR TC= 25°C80A
EAR TC= 25°C60mJ
EAS TC= 25°C 5.0 J
dV/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 20 V/ns
PDTC= 25°C 960 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10s 300 °C
TSOLD Plastic body for 10s 260 °C
FCMounting force 30...120/6.7...27 N / lbs
Weight 10 g
PLUS264TM( IXFB)
GDS( TAB )
G = Gate D = Drain
S = Source TAB = Drain
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB80N50Q2
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 50 65 S
Ciss 15 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 1610 pF
Crss 300 pF
td(on) Resistive Switching Times 29 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 25 ns
td(off) RG = 1Ω (External) 60 ns
tf11 ns
Qg(on) 250 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 80 nC
Qgd 120 nC
RthJC 0.13 °C/W
RthCK 0.13 °C/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions Min. Typ. Max.
ISVGS = 0V 80 A
ISM Repetitive; 320 A
pulse width limited by TJM
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 250 ns
QRM 1.4 μC
IRM 12 A
Note: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2 %.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2
PLUS264TM (IXFB) Outline
IF = 25A, VGS = 0V
-di/dt = 100 A/μs
VR = 100 V
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© 2007 IXYS CORPORATION, All rights reserved
IXFB80N50Q2
Fi g. 2. Extended Output Chara cteristics
@ 2 5 deg. C
0
20
40
60
80
100
120
140
160
180
200
0 2 4 6 8 101214161820
VD S - Volts
I D - A m peres
VGS
= 10V
9V
8V
5V
6V
7V
Fig. 3. Output Characteristi cs
@ 125 Deg. C
0
10
20
30
40
50
60
70
80
024681012
VD S - Volts
I D - A m peres
V
GS
= 10 V
8V
7V
5V
6V
Fig. 1 . Output Cha racteristics
@ 25 Deg. C
0
10
20
30
40
50
60
70
80
0123456
VD S - Volts
I D - A mperes
VGS
= 10 V
8V
7V
5V
6V
Fig. 4. RDS(o n) Normalized to ID = 40A
Value vs. Junction Temperature
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
-50 -25 0 25 50 75 100 125 150
TJ - Degrees Centigrade
R D S ( o n ) - N o rmalize
d
I
D
= 80A
I
D
= 40 A
V
GS
= 10V
Fig. 6. Drain Current vs. Case
Temperature
0
10
20
30
40
50
60
70
80
90
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
I D - Amp e res
Ex ternal Lead Current Limit
Fig. 5. RDS(on) Normalized to
ID = 40A Value vs. Drain Current
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0 40 80 120 160 200
I D - Amper es
R D S ( o n ) - N o rma l i ze
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
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IXYS reserves the right to change limits, test conditions, and dimensions.
IXFB80N50Q2
IXYS REF: F_80N50Q2(95)7-20-07-F
Fig. 1 1. Capac ita nce
100
1000
10000
100000
0 5 10 15 20 25 30 35 40
VD S - Volts
Capacitance - p
F
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 40 80 120 160 200 240 280
Q G - nanoCoulombs
VG S - Vo l ts
V
DS
= 250V
I
D
= 40A
I
G
= 10mA
Fi g. 7. Input Admi ttance
0
20
40
60
80
100
120
140
3.5 4.5 5.5 6.5 7.5
VG S - Volt s
I D - Amp ere s
T
J
= 125ºC
25ºC
-40ºC
Fig. 8 . Transconductanc e
0
20
40
60
80
100
120
0 20 40 60 80 100 120 140 160 180
I D - Amp eres
g
f s - Siem ens
T
J
= - 40ºC
25ºC
125ºC
Fig. 9. Source Current vs. Source-To-
Drain Voltage
0
40
80
120
160
200
240
0.4 0.6 0.8 1 1.2 1.4 1.6
VS D - Volts
I S - Amp e res
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Maximum Transient T hermal
Impedance
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
( t h ) J C
-
ºC /
W
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