KST-I017-001 2
STK596M
Absolute maximum ratings (Ta=25°C)
Characteristic Symbol Rating Unit
Gate-Drain voltage VGDO -20 V
Gate Current IG 10 mA
Drain Current ID 1 mA
Power dissipation PD 100 mW
Junction Temperature TJ 150
°C
Storage Temperature range Tstg -55~150
°C
Electrical Characteristics (Ta=25°C)
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Gate-drain breakdown voltage V(BR)GDO IG=-100µA -20 V
Cutoff voltage VGS(off) VDS=5V, ID=1 ㎂ -0.6 -1.5 V
Zero Voltage Drain current IDSS V
DS=5V, VGS=0 100 800
µA
Forward transfer admittance |yfs| VDS=5V, VGS=0, f=1KHz 0.4 1.2 mS
Input capacitance Ciss VDS=5V, VGS=0, f=1MHz 3.5 pF
Reverse Transfer capacitance Crss VDS=5V, VGS=0, f=1MHz 0.65 pF
Output Noise Voltage VNO VIN=0, A CURVE
-110 dB
IDSS Classification
Classification A B C D E
IDSS[㎂] 100 ~ 170 150 ~ 240 210 ~ 350 320 ~ 480 440 ~ 800
Noise Voltage Test Circuit
VTVM
VCC=+4.5V
Cin=15p
1kΩ
JIS
V