2. 30¡ À0. 05
1. 25¡ À0. 05
1.30¡À0.03
0.30
2.00¡À0.051.01 R
EF
RB706F-40 SCHOTTKY BARRIER DIODE
FEATURES
Power dissipation
PD: 200 mW (Tamb=25℃)
Collector current
IF: 30 mA
Collector-base voltage
VR: 40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
CIRCUIT:
1
3
2
MARKING: 3J
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN MAX UNIT
Reverse breakdown voltage V(BR) IR= 100µA 40 V
Reverse vol tage leakage current IR V
R=10V 1
µA
Forward voltage VF IF=1mA
0.37 V
Diode capacit a nce CD V
R=1V, f=1MHz 5 pF
Unit: mm
SOT-323
