MOTORCLA SC XSTRS/R F MOTOROLA m= SEMICONDUCTOR Soo TECHNICAL DATA NPN 2N5989 2N5991 19 HIGH POWER PLASTIC ENTARY SILICON POWER TRANSISTORS ... designed for use in general-purpose amplifier and switching circuits, 60 Vdc 2N5989 100 Vde 2N5991 Collector-Base Voltage VcBO Collector-Emitter Voltage VCEQ = 40 Vde 2N5989 = 80 Vdc 2N5991 e@ DC Current Gain hee = 20-120 @ Ic = 6.0 Adc = 7.0 (Min) @ Ic = 12 Adc Collector-Emitter Saturation Voltage VcE(sat) = 0.7 Vde (Max) @ Ig = 6.0 Ade 12 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 40, 60, 80 VOLTS 100 WATTS *MAXIMUM RATINGS Rating Symbol | 2NS989 | 2N5991 | Unit Collector-Base Voltage VcB 60 100 Vde Collector-Emitter Voltage VcEO 40 80 Vde Emitter-Base Voltage VeB 5.0 Vde Collactor Current Continuous Ic 12 Adc Peak 20 Base Current IB 4.0 Adc Total Power Dissipation @ Tc = 25C Pp 100 Watts Derate above 25C 0.8 WFC Operating and Storage Junction Ty. Tstg 65 to +150 C Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction to Case ajc 1.25 CAN *Indicates JEDEC Registered Data FIGURE 1 POWER DERATING Pp, POWER DISSIPATION (WATTS) Tc. CASE TEMPERATURE (C) r-8 F M -| 4 ft clo fis Silas Te 3j_ 0 i 1 v Vt My etl<D ihe -rlc STYLE 2: Ry PIN 1, EMITTER jt 2. COLLECTOR ees o 3. BASE 4 NOTES: 1. DIM D" UNCONTROLLED IN ZONE H" 2. OIM F" DIA THRU 3. HEAT SINK CONTACT AREA (BOTTOM) 4 LEADS WITHIN 0.005" RAD OF TRUE POSITION (TP) AT MAXIMUM MATERIAL CONDITION. OIM CASE 90-05 TO-225A8 TYPE (TO-127 TYPE) ze o Sf caez254 oosusts 2? ff 7-33-73 3-131 " MOTOROLA SC XSTRS/R F 12E D Bf uan72s4 goaus7? 9 | 2N5989, 2N5991 *ELECTRICAL CHARACTERISTICS (Tc = 25C unless otherwise noted) j Characteristic OFF CHARACTERISTICS | Symbol | Min T- 3313 Unit Collector-Emitter Sustaining Voltage (Ic = 0.2 Ade, Ig = 0) VcEO(sus) 2N5989 40 2N5991 80 Vde Collector Cutoff Current (VceE = 20 Vde, ip = 0) (VcE = 40 Vde, Ig = 0) IcEo 2Ns989 = 2N5991 - 2.0 mAdc Collector Cutoff Current (Vcg = 60 Vde, Vge(off) = 1.5 Vde) (VcE = 100 Vde, VeE(oft) = 1.5 Vde) (VcE = 40 Vde, Vee(oft) = 1.5 Vde, To = 126C) (Vcg = 80 Vde, VaE{ot) = 1.5 Vde, To = 125C) ICEX 2N5989 _ 2N5991 _- 2N5989 - 2N5991 _ 200 200 2.0 pAdc mAdc Emitter Cutoff Current (Vag = 5.0 Vde, Ic = 0) 'eBO _ 1.0 mAdec ON CHARACTERISTICS OC Current Gain (I = 1.5 Ade, Veg = 2.0 Vdc) (Ic = 6.0 Ade, Voce = 2.0 Vde} (Ic = 12 Adc, Vcg = 2.0 Vde) he 20 7.0 120 Collector-Emitter Saturation Voltage {I = 6.0 Ade, Ig = 0.6 Adc) (Ic = 12 Ade, Ig = 1.8 Ade) Vc (sat) 0.6 1.7 Vde Base-Emitter Saturation Voltage (le = 12 Ade, Ip = 1.8 Adc} VBE(sat) _ 25 Vde Base-Emitter On Voltage (Ic = 6.0 Adc, Vcg = 2.0 Vdc) VBE(on) _- Vde DYNAMIC CHARACTERISTICS Current-Gain Bandwidth Product (Ic = 0.5 Ade, Veg = 10 Vde, fragt = 1.0 MHz} fT 2.0 MHz Output Capacitance (Vop = 10 Vde, Ie = 0, f = 1.0 MHz) Cob - 300 pF Small-Signal Current Gain (Ic = 2.0 Ade, Vee = 4.0 Vde, f = 1.0 kHz) hfe 20 *Indicates JEDEC Registered Data. (1) fr = [heel * frest FIGURE 2 SWITCHING TIMES TEST CIRCUIT vec +30 2hus Ac +11V Re SCOPE o-J --J- -90V tr, 410 ns = DUTY CYCLE = 10% 4V ~ Ra and Re VARIEO TO OBTAIN GESIREO CURRENT LEVELS Oy MUST SE FAST RECOVERY TYPE, eg: MBDS300 USED ABOVE fg ~100 mA MS06100 USEO SELOW tg +100 mA For PNP test circuit reverse diode and voltege polarities. FIGURE 3 ~ TURN-ON TIME 2.0 t, TIME (5) 0.1 0.05 .0 Voc i= 10'p y= 2606 Ic, COLLECTOR CURRENT (AMP) 3-132 MOTORGLA SC XSTRS/R F (NORMALIZED) a) r(t) EFFECTIVE THERMAL RESISTANCE o n 8 +Ic, COLLECTOR CURRENT (AMP) 1, TIME (ys) 2 we & eee asa 10 1cE D a 6367254 00445746 O i 2N5898, 2N5991 T- 33- / 3 FIGURE 4 THERMAL RESPONSE nw 2 | Osclt) = rit) G5 630 = 1.25C/W Max O CUAVES APPLY FORA POWER qd PULSE TRAIN SHOWN READ TIME AT ty 4 = Type) Te = Pipk) uct) tz} DUTY CYCLE, D = ty/t2 t, TIME {ms} FIGURE 5 ACTIVE-REGION SAFE OPERATING AREA Ts Blow L afd dad SECOND BREAKDOWN same= = BONDING WIRE LIMITED =~ = THERMAL LIMITATION @ Te = 25C 2.0 5.0 20 Ve, COLLECTOR-EMITTER VOLTAGE (VOLTS) FIGURE 6 TURN-OFE TIME =H 'e1 = tg2 Ic = 1018 Ty = 259 Ic, COLLECTOR CURRENT (AMP) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Sate operating area curves indicate I Vg limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 5 is based on Typ) = 150C; T is variable depanding on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided Tyipk) 150C Ty(pk) may be calculated from the data in Figure 4. At high case temperatures, thermal limitations will reduce the power that can be handled to values fess than the limitations imposed by second breakdown. FIGURE 7 CAPACITANCE s C, CAPACITANCE (pF) w & 05 1.0 20 .0 10 2 50 Va, REVERSE VOLTAGE (VOLTS) 3-133 MOTOROLA SC XSTRS/R F 12E 0D i 6367254 0084579 2 2N5989, 2N5991 T-33-/3 FIGURE 8 DC CURRENT GAIN FIGURE 9 COLLECTOR SATURATION REGION 2.0 500 400 08 hee, OC CURRENT GAIN 3 30 20 08 Vce. COLLECTOR-EMITTER VOLTAGE (VOLTS) .0 10 0 70 200 300 1000 ig, COLLECTOR CURRENT (AMP) Ig, BASE CURRENT (mA) FIGURE 10 ON VOLTAGES 20 Ty 2 25C VBE (sat) @ Ie/lg = 10 08 V, VOLTAGE (VOLTS) @VcE=2.0V 04 Vee (sat) @ Ic/lp = 9 02 03 as 1.0 20 3.0 Ic, COLLECTOR CURRENT (AMP) 3-134