MRF581 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The MRF581 is Designed for High current low Power Amplifier Applications up to 1.0 GHz. Dim. Are in mm FEATURES: * Low Noise Figure * Low Intermodulation Distortion * High Gain * OmnigoldTM Metalization System MAXIMUM RATINGS IC 200 mA VCBO 36 V VCEO 18 V VEBO 2.5 V PDISS 2.5 W @ TC = 25 C TJ -65 C to +200 C TSTG -65 C to +200 C CHARACTERISTICS SYMBOL Leads 1 and 3 = Emitter 2 = Collector 4 = Base TC = 25 C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 36 V BVCEO IC = 1.0 mA 18 V BVEBO IE = 100 A 2.5 V IEBO VEB = 2.0 V 100 A ICBO VCB = 15 V 100 A hFE VCE = 5.0 V 200 --- Ccb VCB = 10 V 2.0 pF GP VCC = 10 V IC = 50 mA 50 f = 1.0 MHz IC = 50 f = 0.5 GHz 1.4 13 15.5 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. dB REV. A 1/1