A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 1.0 mA 36 V
BVCEO IC = 1.0 mA 18 V
BVEBO IE = 100 µA 2.5 V
IEBO VEB = 2.0 V 100 µA
ICBO VCB = 15 V 100 µA
hFE VCE = 5.0 V IC = 50 mA 50 200 ---
Ccb VCB = 10 V f = 1.0 MHz 1.4 2.0 pF
GP VCC = 10 V IC = 50 f = 0.5 GHz 13 15.5 dB
NPN SILICON RF TRANSISTOR
MRF581
DESCRIPTION:
The MRF581 is Designed for
High current low Power Amplifier
Applications up to 1.0 GHz.
FEATURES:
• Low Noise Figure
• Low Intermodulation Distortion
• High Gain
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 200 mA
VCBO 36 V
VCEO 18 V
VEBO 2.5 V
PDISS 2.5 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +200 °C
PACKAGE STYLE
Dim. Are in mm
Leads 1 and 3 = Emitter 2 = Collector 4 = Base
