AP1203AGMT-HF - Advanced Power Electronics Corp. USA

Advanced Power N-CHANNEL ENHANCEMENT MODE

Electronics Corp. POWER MOSFET

▼ Simple Drive Requirement BVDSS 30V

▼ SO-8 Compatible with Heatsink RDS(ON) 12mΩ

▼ Low On-resistance ID37A

▼ RoHS Compliant

Description

□

Absolute Maximum Ratings

Symbol Units

VDS V

VGS V

ID@TC=25℃A

ID@TA=25℃A

ID@TA=70℃A

IDM A

PD@TC=25℃W

PD@TA=25℃W

EAS Single Pulse Avalanche Energy4mJ

TSTG ℃

TJ℃

Symbol Value Units

Rthj-c Maximum Thermal Resistance, Junction-case 4.5 ℃/W

Rthj-a Maximum Thermal Resistance, Junction-ambient325 ℃/W

Data & specifications subject to change without notice

200812241

Total Power Dissipation 27.8

Storage Temperature Range

Operating Junction Temperature Range

-55 to 150

Total Power Dissipation

16.2

Thermal Data

Parameter

Gate-Source Voltage +20

Continuous Drain Current315.8

Continuous Drain Current (Chip)

Continuous Drain Current312.6

Pulsed Drain Current1150

Parameter Rating

Drain-Source Voltage 30

P1203AGMT-HF

Halogen-Free Product

dvanced Power MOSFETs from APEC provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and cost-effectiveness.

The PMPAK 5x6 package is special for DC-DC converters application

and the foot print is compatible with SO-8 with backside heat sink and

lower profile.

SSSGPMPAK 5x6

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units

BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V

RDS(ON) Static Drain-Source On-Resistance2VGS=10V, ID=20A - - 12 mΩ

VGS=4.5V, ID=15A - - 22 mΩ

VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V

gfs Forward Transconductance VDS=10V, ID=20A - 27 - S

IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 10 uA

IGSS Gate-Source Leakage VGS=+20V,VDS=0V - - +100 nA

QgTotal Gate Charge2ID=20A - 6 9.6 nC

Qgs Gate-Source Charge VDS=15V - 1.7 - nC

Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.6 - nC

td(on) Turn-on Delay Time2VDS=15V - 6 - ns

trRise Time ID=1A - 7.5 - ns

td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 16.5 - ns

tfFall Time RD=15Ω-6-

Ciss Input Capacitance VGS=0V - 420 670 pF

Coss Output Capacitance VDS=25V - 130 - pF

Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF

RgGate Resistance f=1.0MHz - 3.3 5 Ω

Source-Drain Diode

Symbol Parameter Test Conditions Min. Typ. Max. Units

VSD Forward On Voltage2IS=20A, VGS=0V - - 1.2 V

trr Reverse Recovery Time2IS=10A, VGS=0V, - 19 - ns

Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC

Notes:

1.Pulse width limited by Max. junction temperature

2.Pulse test

3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec, 60oC/W at steady state.

4.Starting Tj=25oC , VDD=25V , L=0.1mH , RG=25Ω , IAS=18A.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.

APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED

HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

AP1203AGMT-HF

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

AP1203AGMT-HF

0.0 1.0 2.0 3.0 4.0 5.0

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=150oC10V

8.0V

7.0V

6.0V

VG=4.0V

100

120

0.0 1.0 2.0 3.0 4.0 5.0

VDS , Drain-to-Source Voltage (V)

ID , Drain Current (A)

TC=25oC10V

9.0V

8.0V

7.0V

VG=4.0V

0.4

0.8

1.2

1.6

2.0

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized RDS(ON)

ID=20A

VG=10V

0 0.4 0.8 1.2 1.6

VSD , Source-to-Drain Voltage (V)

IS(A)

Tj=25oC

Tj=150oC

246810

VGS , Gate-to-Source Voltage (V)

RDS(ON) (m

)

D=15A

TC=25oC

0.0

0.4

0.8

1.2

1.6

-50 0 50 100 150

Tj , Junction Temperature ( oC)

Normalized VGS(th) (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

AP1203AGMT-HF

100

1000

0.1 1 10 100

VDS ,Drain-to-Source Voltage (V)

ID (A)

TC=25oC

le Puls

100us

1ms

10ms

100ms

0.01

0.1

0.00001 0.0001 0.001 0.01 0.1 1

t , Pulse Width (s)

Normalized Th e rmal Re spon se (Rthjc)

PDM

Duty factor = t/T

Peak Tj = PDM x Rthjc + Tc

0.02

0.01

0.05

0.1

0.2

Duty factor = 0.5

Single Pulse

024681012

QG , Total Gate Charge (nC)

VGS , Gate to Sourc e Voltage ( V)

I D=20A

VDS =15V

VDS =18V

V DS =24V

200

400

600

800

1 5 9 13 17 21 25 29

VDS ,Drain-to-Source Voltage (V)

C (pF)

f=1.0MHz

Ciss

Coss

Crss

4.5V

QGS QGD

Charge

td(on) trtd(off) tf

VDS

VGS

10%

90%

Millimeters

MIN NOM MAX

A0.90 1.00 1.10

b 0.33 0.41 0.51

C 0.20 - -

D1 4.80 4.90 5.10

D2 - - 4.20

E 5.90 6.00 6.10

E1 (Reference) 5.70 5.75 5.80

E2 (Reference) 3.38 3.58 3.78

H- - 0.62

K (Reference) 0.70 - -

L0.51 0.61 0.71

L1 - - 0.20

0° - 12°

1.All Dimension Are In Millimeters.

2.Dimension Does Not Include Mold Protrusions.

Part Marking Information & Packing : PMPAK 5x6

Package Outline : PMPAK 5x6

ADVANCED POWER ELECTRONICS CORP.

SYMBOLS

1.27 BSC

Date Code (YWWSSS)

Y：Last Digit Of The Year

WW：Week

SSS：Sequence

If last "S" is numerical letter : Rohs product

If last "S" is English letter : HF & Rohs product

α(Reference)

1203AGM

YWWSSS

Part Number(1203A)

Package Code(GMT)