G10(1)–1/2
Schottky Barrier Diodes
DEVICE MARKING
BAT54RCLT1 = KL3
MAXIMUM RATINGS
Rating Symbol Max Unit
Reverse V oltage V R30 V olts
Forward Power Dissipation P F
@ T A = 25°C 225 mW
Derate above 25°C 1.8 mW/°C
Forward Current (DC) I F200MAX mA
Operating Junction Temperature Range T J120MAX °C
Storage Temperature Range T stg –55 to +150 °C
SOLDERING CHARACTERISTICS
Characteristic Symbol Unit
Solder Heat Resistance 265 °C
Solderability 240 to 265 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Leakage (V R = 25 V) I R— — 2.0 µA
Forward Voltage (I F = 0.1 mA) V F1 — — 0.24 V
Forward Voltage (I F = 1 mA) V F2 — — 0.32 V
Forward Voltage (I F = 10 mA) V F3 — — 0.40 V
Forward Voltage (I F = 30 mA) V F4 — — 0.5 V
Forward Voltage (I F = 100 mA) V F— — 1.0 V
Diode Capacitance(V R=1V, F=1MHz) C T——10pF
Reverse Recovery T ime t rr — — 5.0 ns
Repetitive Peak Forward Current I FRM — — 300 mA
Non-Repetitive Peak Forward Current I FSM — — 600 mA
BAT54RCLT1
CASE 318–08, STYLE 9
SOT–23 (T O–236AB)
3
CATHODE
1
ANODE
2
ANODE
1
3
2
