PTVS64VP1UTP - NXP - Datasheet.Live

1. Product profile

1.1 General description

600 W unidirectional T ransient Voltage Suppr essor (TVS) in a SOD128 small and flat lead

Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage

protection in high-temperature applications.

1.2 Features and benefits

1.3 Applications

Power supply protection

Automotive application

Industrial application

Power management

High-temperature applications

1.4 Quick reference data

[1] In accordance with IEC 61643-321 (10/1000 s current waveform).

PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

Rev. 1 — 11 October 2011 Product data sheet

SOD128

Rated peak puls e po we r: PPPM = 600 W High temperature stability Tj185 C

Reverse standoff voltage range:

VRWM =3.3Vto64V

Small plastic package suitable for

surface-mounted design

Reverse current: IRM =0.001AAEC-Q101 qualified

Very lo w package hei gh t: 1 mm

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

PPPM rated peak pulse power [1] --600W

VRWM reverse standoff voltage 3.3 - 64 V

Product data sheet Rev. 1 — 11 October 2011 2 of 12

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

2. Pinning information

[1] The marking bar indicates the cathode.

3. Ordering information

[1] The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.

4. Marking

Table 2. Pinning

Pin Description Simplified outline Graphic symbol

1 cathode [1]

2 anode

sym035

Table 3. Ordering information

Type number[1] Package

Name Description Version

PTVSxP1UTP series - plastic surface-mounted package; 2 leads SOD128

Table 4. Marking codes

Type number Marking code Type number Mark ing code

PTVS3V3P1UTP C5 PTVS20VP1UTP CP

PTVS5V0P1UTP C6 PTVS22VP1UTP CR

PTVS6V0P1UTP C7 PTVS24VP1UTP CS

PTVS6V5P1UTP C8 PTVS26VP1UTP CT

PTVS7V0P1UTP C9 PTVS28VP1UTP CU

PTVS7V5P1UTP CA PTVS30VP1UTP CV

PTVS8V0P1UTP CB PTVS33VP1UTP CW

PTVS8V5P1UTP CC PTVS36VP1UTP CX

PTVS9V0P1UTP CD PTVS40VP1UTP CY

PTVS10VP1UTP CE PTVS43VP1UTP CZ

PTVS11VP1UTP CF PTVS45VP1UTP D1

PTVS12VP1UTP CG PTVS48VP1UTP D2

PTVS13VP1UTP CH PTVS51VP1UTP D3

PTVS14VP1UTP CJ PTVS54VP1UTP D4

PTVS15VP1UTP CK PTVS58VP1UTP D5

PTVS16VP1UTP CL PTVS60VP1UTP D6

PTVS17VP1UTP CM PTVS64VP1UTP D7

PTVS18VP1UTP CN - -

Product data sheet Rev. 1 — 11 October 2011 3 of 12

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

5. Limiting values

[1] In accordance with IEC 61643-321 (10/1000 s current waveform).

[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.

6. Thermal characteristics

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard

footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[4] Soldering point of cathode tab.

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

PPPM rated peak pulse power [1] -600W

IPPM rated peak pulse current [1] -see

Table 9

and 10

IFSM non-repetitive peak

forward current single half-sine

wave; tp=8.3ms -100A

Tjjunction temperature - 185 C

Tamb ambient temperature 55 +185 C

Tstg storage temperature 65 +185 C

Table 6. ESD maximum ratings

Tamb =25



C unless otherwise specified.

Symbol Parameter Conditions Min Max Unit

Per diode

VESD electrostatic discharge

voltage IEC 61000-4-2, level 4

(contact discharge) [1] -30kV

Table 7. ESD standards compliance

Standard Conditions

Per diode

IEC 61000-4-2; level 4 (ESD) > 1 5 kV (air); > 8 kV (contact)

MIL-STD-883; class 3B (human body model) > 8 kV

Table 8. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-a) thermal resistance from

junction to ambient in free air [1] --200K/W

[2] --120K/W

[3] --60K/W

Rth(j-sp) thermal resistance from

junction to solder point [4] --12K/W

Product data sheet Rev. 1 — 11 October 2011 4 of 12

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

7. Characteristics

Table 9. Characteristics per type; PTVS3V3P1UTP to PTVS7V0P1UTP

Tj=25



C unless otherwise specified.

Type

number

PTVSxxx

P1UTP

Reverse

standoff

voltage

VRWM (V)

Breakdown voltage

VBR (V) Reverse leakage current

IRM (A) Clamping

voltage VCL (V) Temperature

coefficient

SZ(mV/K)

IR=10mA at VRWM at VRWM

Tj= 150 CIZ=5mA

Max Min Typ Max Typ Max Typ Max IPPM (A) Typ

3V3 3.3 5.20 5.60 6.00 5 600 17 8.0 75.0 1.0

5V0 5.0 6.40 6.70 7.00 5 400 17 9.2 65.2 2.5

6V0 6.0 6.67 7.02 7.37 5 400 17 10.3 58.3 3.2

6V5 6.5 7.22 7.60 7.98 5 250 17 11.2 53.6 3.6

7V0 7.0 7.78 8.20 8.60 3 100 9 12.0 50.0 4.3

Table 10. Characteristics per type; PTVS7V5P1UTP to PTVS64VP1UTP

Tj=25



C unless otherwise specified.

Type

number

PTVSxxx

P1UTP

Reverse

standoff

voltage

VRWM (V)

Breakdown voltage

VBR (V) Reverse leakage current

IRM (A) Clamping

voltage VCL (V) Temperature

coefficient

SZ(mV/K)

IR=1mA at VRWM at VRWM

Tj= 150 CIZ=5mA

Max Min Typ Max Typ Max Typ Max IPPM (A) Typ

7V5 7.5 8.33 8.77 9.21 0.2 50 2.0 12.9 46.5 5.0

8V0 8.0 8.89 9.36 9.83 0.03 25 2.0 13.6 44.1 5.5

8V5 8.5 9.44 9.92 10.40 0.01 10 0.5 14.4 41.7 6.5

9V0 9.0 10.00 10.55 11.10 0.005 5 0.5 15.4 39.0 7.1

10V 10 11.10 11.70 12.30 0.005 2.5 0.5 17.0 35.3 8.1

11V 11 12.20 12.85 13.50 0.005 2.5 0.5 18.2 33.0 9.2

12V 12 13.30 14.00 14.70 0.005 2.5 0.5 19.9 30.2 10.3

13V 13 14.40 15.15 15.90 0.001 0.1 0.5 21.5 27.9 11.4

14V 14 15.60 16.40 17.20 0.001 0.1 0.5 23.2 25.9 13.2

15V 15 16.70 17.60 18.50 0.001 0.1 0.5 24.4 24.6 14.1

16V 16 17.80 18.75 19.70 0.001 0.1 0.5 26.0 23.1 15.9

17V 17 18.90 19.90 20.90 0.001 0.1 0.5 27.6 21.7 16.4

18V 18 20.00 21.00 22.10 0.001 0.1 0.5 29.2 20.5 18.5

20V 20 22.20 23.35 24.50 0.001 0.1 0.5 32.4 18.5 20.0

22V 22 24.40 25.60 26.90 0.001 0.1 0.5 35.5 16.9 23.8

24V 24 26.70 28.10 29.50 0.001 0.1 0.5 38.9 15.4 24.9

26V 26 28.90 30.40 31.90 0.001 0.1 0.5 42.1 14.3 29.1

28V 28 31.10 32.80 34.40 0.001 0.1 0.5 45.4 13.2 30.6

30V 30 33.30 35.10 36.80 0.001 0.1 0.5 48.4 12.4 34.4

33V 33 36.70 38.70 40.60 0.001 0.1 0.5 53.3 11.3 37.5

36V 36 40.00 42.10 44.20 0.001 0.1 0.5 58.1 10.3 42.3

Product data sheet Rev. 1 — 11 October 2011 5 of 12

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

40V 40 44.40 46.80 49.10 0.001 0.1 0.5 64.5 9.3 48.1

43V 43 47.80 50.30 52.80 0.001 0.1 0.5 69.4 8.6 51.6

45V 45 50.00 52.65 55.30 0.001 0.1 0.5 72.7 8.3 55.2

48V 48 53.30 56.10 58.90 0.001 0.1 0.5 77.4 7.8 58.2

51V 51 56.70 59.70 62.70 0.001 0.1 0.5 82.4 7.3 62.5

54V 54 60.00 63.15 66.30 0.001 0.1 0.5 87.1 6.9 66.1

58V 58 64.40 67.80 71.20 0.001 0.1 0.5 93.6 6.4 71.4

60V 60 66.70 70.20 73.70 0.001 0.1 0.5 96.8 6.2 74.1

64V 64 71.10 74.85 78.60 0.001 0.1 0.5 103.0 5.8 80.0

Table 10. Characteristics per type; PTVS7V5P1UTP to PTVS64VP1UTP …continued

Tj=25



C unless otherwise specified.

Type

number

PTVSxxx

P1UTP

Reverse

standoff

voltage

VRWM (V)

Breakdown voltage

VBR (V) Reverse leakage current

IRM (A) Clamping

voltage VCL (V) Temperature

coefficient

SZ(mV/K)

IR=1mA at VRWM at VRWM

Tj= 150 CIZ=5mA

Max Min Typ Max Typ Max Typ Max IPPM (A) Typ

Product data sheet Rev. 1 — 11 October 2011 6 of 12

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

Fig 1. 10/1000 s puls e wa ve fo rm according to

IEC 61643-321 Fig 2. Relative variation of rated peak pulse power as

a function of junction temperature; typical

values

Tamb =25CT

amb =25C; f = 1 MHz

(1) PTVS5V0P1UTP

(2) PTVS12VP1UTP

(3) PTVS24VP1UTP

(4) PTVS64VP1UTP

Fig 3. Rat ed peak pu lse pow er as a func tion of p ul se

duration; typical values Fig 4. Diode capacitance as a function of reverse

voltage; typical values

tp (ms)

0 4.03.01.0 2.0

006aab319

100

150

IPP

(%)

50 % IPP; 1000 μs

100 % IPP; 10 μs

Tj (°C)

0 20015050 100

006aac765

0.4

0.8

1.2

0.0

PPPM

PPPM(25°C)

006aac172

104

103

105

PPPM

(W)

102

tp (μs)

10−1104

103

110

006aac173

103

102

104

(pF)

VR (V)

110

(1)

(2)

(3)

(4)

Product data sheet Rev. 1 — 11 October 2011 7 of 12

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council

(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is

suitable for use in automotive applications.

9. Package outline

Fig 5. V-I characteristics for a unidirectional TVS protection diode

006aab324

−V

RWM

−I

P-N

−+

−I

PPM

Fig 6. Package outline SOD128

07-09-12Dimensions in mm

1.1

0.9

0.22

0.10

0.6

0.3

5.0

4.4 4.0

3.6

1.9

1.6

2.7

2.3

Product data sheet Rev. 1 — 11 October 2011 8 of 12

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

10. Packing information

[1] For further information and the availability of packing methods, see Section 14.

[2] The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.

11. Soldering

Table 11. Packing methods

The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]

Type number[2] Package Description Packing quantity

3000

PTVSxP1UTP series SOD128 4 mm pitch, 12 mm tape and reel -115

Reflow soldering is the only recommended soldering method.

Fig 7. Reflow soldering footprint SOD128

solder lands

solder resist

occupied area

solder paste

2.53.4 2.1

(2×)

1.9

(2×)

4.4

4.2

6.2

1.2

(2×)

1.4

(2×)sod128_fr

Dimensions in mm

Product data sheet Rev. 1 — 11 October 2011 9 of 12

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

12. Revision history

Table 12. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PTVSXP1UTP_SER v.1 20111011 Product data sheet - -

Product data sheet Rev. 1 — 11 October 2011 10 of 12

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

13. Legal information

13.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term ‘short data sheet’ is explained in section “Definitions”.

[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

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representation or warranty tha t such application s will be suitable for the

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

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Document status[1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 1 — 11 October 2011 11 of 12

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

13.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

14. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PTVSxP1UTP series

High-temperature 600 W Transient Voltage Suppressor

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 October 2011

Document identifier : P T VSX P1 UTP _SE R

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

15. Contents

1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3

6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4

8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7

8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7

10 Packing information . . . . . . . . . . . . . . . . . . . . . 8

11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9

13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10

13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10

13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10

13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11

14 Contact information. . . . . . . . . . . . . . . . . . . . . 11

15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12