1. Product profile
1.1 General description
600 W unidirectional T ransient Voltage Suppr essor (TVS) in a SOD128 small and flat lead
Surface-Mounted Device (SMD) plastic package, designed for transient overvoltage
protection in high-temperature applications.
1.2 Features and benefits
1.3 Applications
Power supply protection
Automotive application
Industrial application
Power management
High-temperature applications
1.4 Quick reference data
[1] In accordance with IEC 61643-321 (10/1000 s current waveform).
PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
Rev. 1 — 11 October 2011 Product data sheet
SOD128
Rated peak puls e po we r: PPPM = 600 W High temperature stability Tj185 C
Reverse standoff voltage range:
VRWM =3.3Vto64V
Small plastic package suitable for
surface-mounted design
Reverse current: IRM =0.001AAEC-Q101 qualified
Very lo w package hei gh t: 1 mm
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
PPPM rated peak pulse power [1] --600W
VRWM reverse standoff voltage 3.3 - 64 V
PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 October 2011 2 of 12
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
[1] The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.
4. Marking
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode [1]
2 anode
12
sym035
12
Table 3. Ordering information
Type number[1] Package
Name Description Version
PTVSxP1UTP series - plastic surface-mounted package; 2 leads SOD128
Table 4. Marking codes
Type number Marking code Type number Mark ing code
PTVS3V3P1UTP C5 PTVS20VP1UTP CP
PTVS5V0P1UTP C6 PTVS22VP1UTP CR
PTVS6V0P1UTP C7 PTVS24VP1UTP CS
PTVS6V5P1UTP C8 PTVS26VP1UTP CT
PTVS7V0P1UTP C9 PTVS28VP1UTP CU
PTVS7V5P1UTP CA PTVS30VP1UTP CV
PTVS8V0P1UTP CB PTVS33VP1UTP CW
PTVS8V5P1UTP CC PTVS36VP1UTP CX
PTVS9V0P1UTP CD PTVS40VP1UTP CY
PTVS10VP1UTP CE PTVS43VP1UTP CZ
PTVS11VP1UTP CF PTVS45VP1UTP D1
PTVS12VP1UTP CG PTVS48VP1UTP D2
PTVS13VP1UTP CH PTVS51VP1UTP D3
PTVS14VP1UTP CJ PTVS54VP1UTP D4
PTVS15VP1UTP CK PTVS58VP1UTP D5
PTVS16VP1UTP CL PTVS60VP1UTP D6
PTVS17VP1UTP CM PTVS64VP1UTP D7
PTVS18VP1UTP CN - -
PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 October 2011 3 of 12
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
5. Limiting values
[1] In accordance with IEC 61643-321 (10/1000 s current waveform).
[1] Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses.
6. Thermal characteristics
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4] Soldering point of cathode tab.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
PPPM rated peak pulse power [1] -600W
IPPM rated peak pulse current [1] -see
Table 9
and 10
IFSM non-repetitive peak
forward current single half-sine
wave; tp=8.3ms -100A
Tjjunction temperature - 185 C
Tamb ambient temperature 55 +185 C
Tstg storage temperature 65 +185 C
Table 6. ESD maximum ratings
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
Per diode
VESD electrostatic discharge
voltage IEC 61000-4-2, level 4
(contact discharge) [1] -30kV
Table 7. ESD standards compliance
Standard Conditions
Per diode
IEC 61000-4-2; level 4 (ESD) > 1 5 kV (air); > 8 kV (contact)
MIL-STD-883; class 3B (human body model) > 8 kV
Table 8. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Rth(j-a) thermal resistance from
junction to ambient in free air [1] --200K/W
[2] --120K/W
[3] --60K/W
Rth(j-sp) thermal resistance from
junction to solder point [4] --12K/W
PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 October 2011 4 of 12
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
7. Characteristics
Table 9. Characteristics per type; PTVS3V3P1UTP to PTVS7V0P1UTP
Tj=25
C unless otherwise specified.
Type
number
PTVSxxx
P1UTP
Reverse
standoff
voltage
VRWM (V)
Breakdown voltage
VBR (V) Reverse leakage current
IRM (A) Clamping
voltage VCL (V) Temperature
coefficient
SZ(mV/K)
IR=10mA at VRWM at VRWM
Tj= 150 CIZ=5mA
Max Min Typ Max Typ Max Typ Max IPPM (A) Typ
3V3 3.3 5.20 5.60 6.00 5 600 17 8.0 75.0 1.0
5V0 5.0 6.40 6.70 7.00 5 400 17 9.2 65.2 2.5
6V0 6.0 6.67 7.02 7.37 5 400 17 10.3 58.3 3.2
6V5 6.5 7.22 7.60 7.98 5 250 17 11.2 53.6 3.6
7V0 7.0 7.78 8.20 8.60 3 100 9 12.0 50.0 4.3
Table 10. Characteristics per type; PTVS7V5P1UTP to PTVS64VP1UTP
Tj=25
C unless otherwise specified.
Type
number
PTVSxxx
P1UTP
Reverse
standoff
voltage
VRWM (V)
Breakdown voltage
VBR (V) Reverse leakage current
IRM (A) Clamping
voltage VCL (V) Temperature
coefficient
SZ(mV/K)
IR=1mA at VRWM at VRWM
Tj= 150 CIZ=5mA
Max Min Typ Max Typ Max Typ Max IPPM (A) Typ
7V5 7.5 8.33 8.77 9.21 0.2 50 2.0 12.9 46.5 5.0
8V0 8.0 8.89 9.36 9.83 0.03 25 2.0 13.6 44.1 5.5
8V5 8.5 9.44 9.92 10.40 0.01 10 0.5 14.4 41.7 6.5
9V0 9.0 10.00 10.55 11.10 0.005 5 0.5 15.4 39.0 7.1
10V 10 11.10 11.70 12.30 0.005 2.5 0.5 17.0 35.3 8.1
11V 11 12.20 12.85 13.50 0.005 2.5 0.5 18.2 33.0 9.2
12V 12 13.30 14.00 14.70 0.005 2.5 0.5 19.9 30.2 10.3
13V 13 14.40 15.15 15.90 0.001 0.1 0.5 21.5 27.9 11.4
14V 14 15.60 16.40 17.20 0.001 0.1 0.5 23.2 25.9 13.2
15V 15 16.70 17.60 18.50 0.001 0.1 0.5 24.4 24.6 14.1
16V 16 17.80 18.75 19.70 0.001 0.1 0.5 26.0 23.1 15.9
17V 17 18.90 19.90 20.90 0.001 0.1 0.5 27.6 21.7 16.4
18V 18 20.00 21.00 22.10 0.001 0.1 0.5 29.2 20.5 18.5
20V 20 22.20 23.35 24.50 0.001 0.1 0.5 32.4 18.5 20.0
22V 22 24.40 25.60 26.90 0.001 0.1 0.5 35.5 16.9 23.8
24V 24 26.70 28.10 29.50 0.001 0.1 0.5 38.9 15.4 24.9
26V 26 28.90 30.40 31.90 0.001 0.1 0.5 42.1 14.3 29.1
28V 28 31.10 32.80 34.40 0.001 0.1 0.5 45.4 13.2 30.6
30V 30 33.30 35.10 36.80 0.001 0.1 0.5 48.4 12.4 34.4
33V 33 36.70 38.70 40.60 0.001 0.1 0.5 53.3 11.3 37.5
36V 36 40.00 42.10 44.20 0.001 0.1 0.5 58.1 10.3 42.3
PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 October 2011 5 of 12
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
40V 40 44.40 46.80 49.10 0.001 0.1 0.5 64.5 9.3 48.1
43V 43 47.80 50.30 52.80 0.001 0.1 0.5 69.4 8.6 51.6
45V 45 50.00 52.65 55.30 0.001 0.1 0.5 72.7 8.3 55.2
48V 48 53.30 56.10 58.90 0.001 0.1 0.5 77.4 7.8 58.2
51V 51 56.70 59.70 62.70 0.001 0.1 0.5 82.4 7.3 62.5
54V 54 60.00 63.15 66.30 0.001 0.1 0.5 87.1 6.9 66.1
58V 58 64.40 67.80 71.20 0.001 0.1 0.5 93.6 6.4 71.4
60V 60 66.70 70.20 73.70 0.001 0.1 0.5 96.8 6.2 74.1
64V 64 71.10 74.85 78.60 0.001 0.1 0.5 103.0 5.8 80.0
Table 10. Characteristics per type; PTVS7V5P1UTP to PTVS64VP1UTP …continued
Tj=25
C unless otherwise specified.
Type
number
PTVSxxx
P1UTP
Reverse
standoff
voltage
VRWM (V)
Breakdown voltage
VBR (V) Reverse leakage current
IRM (A) Clamping
voltage VCL (V) Temperature
coefficient
SZ(mV/K)
IR=1mA at VRWM at VRWM
Tj= 150 CIZ=5mA
Max Min Typ Max Typ Max Typ Max IPPM (A) Typ
PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 October 2011 6 of 12
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
Fig 1. 10/1000 s puls e wa ve fo rm according to
IEC 61643-321 Fig 2. Relative variation of rated peak pulse power as
a function of junction temperature; typical
values
Tamb =25CT
amb =25C; f = 1 MHz
(1) PTVS5V0P1UTP
(2) PTVS12VP1UTP
(3) PTVS24VP1UTP
(4) PTVS64VP1UTP
Fig 3. Rat ed peak pu lse pow er as a func tion of p ul se
duration; typical values Fig 4. Diode capacitance as a function of reverse
voltage; typical values
tp (ms)
0 4.03.01.0 2.0
006aab319
50
100
150
IPP
(%)
0
50 % IPP; 1000 μs
100 % IPP; 10 μs
Tj (°C)
0 20015050 100
006aac765
0.4
0.8
1.2
0.0
PPPM
PPPM(25°C)
006aac172
104
103
105
PPPM
(W)
102
tp (μs)
101104
103
110
2
10
006aac173
103
102
104
Cd
(pF)
10
VR (V)
110
2
10
(1)
(2)
(3)
(4)
PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 October 2011 7 of 12
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
Fig 5. V-I characteristics for a unidirectional TVS protection diode
006aab324
V
CL
V
BR
V
RWM
I
RM
I
R
I
PP
V
I
P-N
+
I
PPM
Fig 6. Package outline SOD128
07-09-12Dimensions in mm
1.1
0.9
0.22
0.10
0.6
0.3
5.0
4.4 4.0
3.6
1.9
1.6
2.7
2.3
1
2
PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 October 2011 8 of 12
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
[2] The series consists of 35 types with reverse standoff voltages from 3.3 V to 64 V.
11. Soldering
Table 11. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number[2] Package Description Packing quantity
3000
PTVSxP1UTP series SOD128 4 mm pitch, 12 mm tape and reel -115
Reflow soldering is the only recommended soldering method.
Fig 7. Reflow soldering footprint SOD128
solder lands
solder resist
occupied area
solder paste
2.53.4 2.1
(2×)
1.9
(2×)
4.4
4.2
6.2
1.2
(2×)
1.4
(2×)sod128_fr
Dimensions in mm
PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 October 2011 9 of 12
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
12. Revision history
Table 12. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PTVSXP1UTP_SER v.1 20111011 Product data sheet - -
PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 October 2011 10 of 12
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full dat a sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre vail.
Product specificat ionThe information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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Notwithstanding any damages that customer might incur for any reason
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NXP Semiconductors products in such equipment or applications and
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Applications — Applications that are described herein for any of these
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representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
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Semiconductors product is suit able and fit for the custome r’s applications and
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applications and products.
NXP Semiconductors does not accept any liability rela ted to any default,
damage, costs or problem which is based on any weakness or default in the
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
PTVSXP1UTP_SER All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 11 October 2011 11 of 12
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PTVSxP1UTP series
High-temperature 600 W Transient Voltage Suppressor
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 October 2011
Document identifier : P T VSX P1 UTP _SE R
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
10 Packing information . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12