DATA SHEET MOS FIELD EFFECT POWER TRANSISTOR 2SK2132 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS (Unit : mm) w a =H [1.4402 | 0.5+0.1 0.540.1 1. Gate Drain(b) 2: Drain 3. Source Gate (G) {Diode in the figure is the parasitic diode) DESCRIPTION The 2SK2132 is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES * Low On-state Resistance Rosion) = 0.65 Q MAX. (Ves = 10 V, Ip = 2.0 A) * Low Ciss Ciss = 300 pF TYP. * Built-in G-S Gate Protection Diodes High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to Quality grade on NEC Semiconductor Devices (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature ~55 to +150 c Channel! Temperature 150 C MAX. Maximum Power Dissipation Total Power Dissipation (Ta = 25 C) 1.8 Ww Maximum Voltages and Currents (Ta = 25 C) Voss Drain to Source Voltage 180 Vess Gate to Source Voltage +20 Ip(os) Drain Current (DC) +4.0 ID(pulse)* Drain Current (pulse) +16 Maximum Avalanche Capability Ratings** las Single Avalanche Current 4.0 Eas Single Avalanche Energy 51.2 mJ *PWS 10 ys, Duty Cycle 3 1% ** Starting Ton = 25C, Re = 250, Ves =20V 0 PPrPp Document No. TC-2370 (O.D.No. TC-7919) Date Published January 1993 M Printed in Japan NEC Corporation 1993NEC 2SK2132 ELECTRICAL CHARACTERISTICS (Ta = 25 C) CHARACTERISTIC SYMBOL MIN. | TYP | MAX. | UNIT TEST CONDITIONS Drian to Source On-state Resistance Ros (on) 0.52 | 0.65 Q Ves=10V, ln =18A Gate to Source Cutoff Valtage Ves (off) 2.0 4.0 Vv Vos=10V, lo=1mA Forward Transfer Admittance lyts| 0.5 S Vos=10V, l>=18A Drain Leakage Current Ipss 100 LA Vos = 500 V, Ves = 0 Gate to Source Leakage Current loss +10 LA Vas = +20 V, Vos = 0 Input Capacitance Cies 300 pF Vos = 10 V Output Capacitance Coss 170 pF Vas =0 Reverse Transfer Capacitance Cres 50 pF f= 1 Miz Turn-On Delay Time ta (on) 9.0 ns Ves = 10 V Rise Time tr 10 ns Von = 100 V Turn-Off Delay Time ta (off) 28 ns ln= 2A, Re = 102 Ri = 509 Fall Time tt 12 ns Total Gate Charge Qc 10 nc Ves = 10 V Gate to Source Charge Qes 2.3 nc lo=2A Gate to Drain Charge Qco 47 nc Voo = 140 V Diode Forward Voltage VFis-o) 0.9 Vv lr = 2 A, Ves = 0 Reverse Recovery Time ter 180 ns lp = 2A Reverse Recovery Charge On 05 uc di/ dt = 50 A/us Test Circuit 1: Avalanche Capability DUT Re = 259 L PG 500 Ves=2050V Test Circuit 3 : Gate Charge Ie=2mA Ri Test Circuit 2 : Switching Time PG, DUT Re Re =102 t t=1bs Duty Cycle 31% Re | 00 lb Weve Form | 9 ft dion)NEC 2SK2132 Radial Tape Specification Dimension (unit : mm) Pe Item Component Body Length along Tape Ai 8.04 0.2 Component Body Height A 13.040.2 Component Body Width 45+0.2 Component Lead Width Dimension d 0.5+0.1 Lead Wire Enclosure Ih 2.5 MIN. Component Center Pitch P 12.7 + 1.0 Feedhole Pitch Po 12.7+0.3 Feedhole Center to Center Lead P2 6.35 +0.5 Component Lead Pitch Fi,F2 | 2.5 * of Deflection Front or Rear dh +1.0 Deflection Left or Right AP +13 Carrier Strip Width Ww 18.0 * be Adhesive Tape Width Wo 5.0 MIN. Feedhole Location wi 9.0+0.5 Adhesive Tape Position We 0.7 MIN. _. Height of Seating Plane Ho 16.0405 Feedhole to upper of Component H1 32.2 MAX. Feedhole to Bottom of Component H 20.0 MAX. Tape Feedhole Diameter Do 4.0+0.2 Overall Taped Package Thickness t 0.740.2Te Case Temperature C FORWARD BIAS SAFE OPERATING AREA 100 eo i a D{pulse) I es 10 5 oO < go a 1 14.0 2 0.1 1 10 100 1000 Vos Drain to Source Voltage - V TRANSFER CHARACTERISTICS Ta=-25 TC a 25 10 75C 125 C < I c ge 4 => o & g Oo I 2 0.1 Vos = 10V Pulsed 5 10 Vs Gate to Source Voltage - V lo - Drain Current - A NEC 2SK2132 TYPICAL CHARACTERISTICS (Ta = 25 C) DERATING FACTOR OF FORWARD BIAS TOTAL POWER DISSIPATION vs. SAFE OPERATING AREA CASE TEMPERATURE 2.1 ae 1.8 1 100 = \ t N\ q 1 5 NX 5 N\ Ss t. oO 80 N\ g \ 8 8 12 N IN a \ Ss 60 N 5 8 3 08 N 8 = \ e 40 3 8 B 06 N 5 iN ' N a N 20 KE NI 0.3 X N N 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tc - Case Temperature - C DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE Pulsed QV BV 7V 6V 5V 2 4 6 8 10 12 14 16 18 20 Vos Drain to Source Voltage - VNEC 2SK2132 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 Rthtcha = 69.4 C/W 10 0.1 Ithicha}(t) Transient Thermal Resistance C/W 0.01 0.001 10u 100 yp am 10m 100 m 1 10 100 1000 PW Pulse Width - s FORWARD TRANSFER ADMITTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT GATE TO SOURCE VOLTAGE 10 & 4 Pulsed y g Pulsed I c g 5 & E 2 1.0 So 1.0 2 14, < & 2 oO 5 2 E 2 ID=4A 5 3 H 3 0.1 2 0.5 z s 2A + a = U B 0.01 o 0.1 1.0 10 0 10 20 30 Ves -V ib ~ Drain Current - A 6s Gate to Source Voltage DRAIN TO SOURCE ON-STATE GATE TO SOURCE CUTOFF VOLTAGE vs. G RESISTANCE vs. DRAIN CURRENT CHANNEL TEMPERATURE oe Ves=10V > : Vos = 10V $ | Pulsed \ Ipb=1mMA @G oe 3.5 2 3 : | sol N & 1.0 S 30 < rs} < g 9 / S 25 8 M 8 3 lA c 8 05 A 3B 20 S s @ N\ gs os 1.5 a oO 1 | z 0 s B 0.1 1.0 10 g 10 lp - Drain Current -A > - 50 0 50 100 = 150 Ten Channel Temperature CNEC 2SK2132 DRAIN TO SOURCE ON - STATE RESISTANCE vs. SOURCE TO DRAIN DIODE CHANNEL TEMPERATURE FORWARD VOLTAGE e | Ves = 10V Pulsed 2 lob=2A 5 Pulsed a < o < oo g 10 e wn oO 5 4 2 8 YY 2 2 & YO "| a 2 0.5 i 8 s Le a a 3 i 2 3 xc -50 0 50 100 150 0 0.5 1.0 15 Ten ~ Channel Temperature ~ C Vso - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SWITCHING CHARACTERISTICS SOURCE VOLTAGE 1000 Tao 1000 f=1 LL Ciss e Qa f 8 = S 100 @ 100 & s & = | Yn 3 lL 0 ~ g 10 & 10 e a S e g Vop = 100 V Ves=10V 1 1 Re-109 0.1 1.0 10 100 0.1 1.0 10 100 Vos Drain to Source Voltage V lo Drain Current -A REVERSE RECOVERY TIME vs. DYNAMIC INPUT CHARACTERISTICS DIODE FORWARD CURRENT 160 16 y Ly 1 di/dt = 50A/us pp = 14 6s = 140 E> ZL f 14 > \ 90V Viti ~ 2 | 2 120 36V 12 4 3 /| / / s = 1000 = 100 10 > AT - 2 20 J 8 5 8 = | Me 23 60 6 3 2 = LAM bog 1 40 4 1 id : TAN Lo 20 KAY 28 2 0 10 0 2 4 6 8 10 12 14 16 0.01 0.1 1.0 10 Og - Gate Change - nC Ir - Diode Forward Current -ANEC las Single Avalanche Current -A SINGLE AVALANCE CURRENT vs. INDUCTIVE LOAD 20 10 1.0 Re = 25 Vpp = 50V Ves=20V 30 Starting Tch = 25 C 0.1 100 Im 10m 100 m L ~ Inductive load - H Eas Single Avalanche Energy mJ 60 2SK2132 SINGLE AVALANCHE ENERGY vs. STARTING CHANNEL TEMPERATURE 50 |b (pulse) = 4A Vop = 50 V 30 w\ 20 \ \ 10 0 N ae 25 50 75 100 = 125 150 Starting Tch Starting Channel Temperature CNEC 2SK2132 [MEMO] No part of this document may be copied or reproduced in any from or by any means without the prior written consent of NEC Corporation.NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation. Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6