PBHV9215Z 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor Rev. 01 -- 11 December 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package. NPN complement: PBHV8215Z. 1.2 Features High voltage Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC AEC-Q101 qualified Medium power SMD plastic package 1.3 Applications LED driver for LED chain module LCD backlighting Automotive motor management Switch Mode Power Supply (SMPS) 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - -150 V IC collector current - - -2 A 100 180 - hFE [1] DC current gain Pulse test: tp 300 s; 0.02. VCE = -10 V; IC = -100 mA [1] PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 collector 3 emitter 4 collector Simplified outline Graphic symbol 4 2, 4 1 1 2 3 3 sym028 3. Ordering information Table 3. Ordering information Type number PBHV9215Z Package Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 4. Marking Table 4. Marking codes Type number Marking code PBHV9215Z V9215Z PBHV9215Z_1 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 01 -- 11 December 2009 2 of 12 PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage VCEO collector-emitter voltage open emitter - -200 V open base - -150 V VEBO emitter-base voltage open collector - -6 V IC collector current - -2 A ICM peak collector current single pulse; tp 1 ms - -4 A IBM peak base current single pulse; tp 1 ms - -500 mA Ptot total power dissipation Tamb 25 C [1] - 0.73 W [2] - 1.45 W Tj junction temperature - 150 C Tamb ambient temperature -55 +150 C Tstg storage temperature -65 +150 C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 006aab764 2.0 Ptot (W) 1.5 (1) 1.0 (2) 0.5 0.0 -75 -25 25 75 125 175 Tamb (C) (1) FR4 PCB, mounting pad for collector 6 cm2 (2) FR4 PCB, standard footprint Fig 1. Power derating curves PBHV9215Z_1 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 01 -- 11 December 2009 3 of 12 PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air thermal resistance from junction to solder point Rth(j-sp) Min Typ Max Unit [1] - - 170 K/W [2] - - 85 K/W - - 15 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 006aab765 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab766 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PBHV9215Z_1 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 01 -- 11 December 2009 4 of 12 PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = -120 V; IE = 0 A - - -100 nA VCB = -120 V; IE = 0 A; Tj = 150 C - - -10 A - - -100 nA - - -100 nA ICES collector-emitter cut-off VCE = -120 V; VBE = 0 V current IEBO emitter-base cut-off current VEB = -4 V; IC = 0 A hFE DC current gain VCE = -10 V VCEsat collector-emitter saturation voltage IC = -100 mA [1] 100 180 - IC = -1 A [1] 80 155 - IC = -1.5 A [1] 70 140 - IC = -2 A [1] 60 120 - IC = -100 mA; IB = -20 mA [1] - -25 -50 mV IC = -1 A; IB = -200 mA [1] - -110 -190 mV IC = - 1.5 A; IB = -300 mA [1] - -155 -270 mV IC = -2 A; IB = -400 mA [1] - -200 -350 mV RCEsat collector-emitter saturation resistance IC = -2 A; IB = -400 mA [1] - 100 175 m VBEsat base-emitter saturation IC = -2 A; IB = -400 mA voltage [1] - -1.0 -1.15 V td delay time - 20 - ns tr rise time - 105 - ns ton turn-on time - 125 - ns ts storage time - 875 - ns tf fall time - 150 - ns toff turn-off time - 1025 - ns fT transition frequency VCE = -10 V; IE = -10 mA; f = 100 MHz - 35 - MHz Cc collector capacitance VCB = -20 V; IE = ie = 0 A; f = 1 MHz - 30 - pF Ce emitter capacitance VEB = -0.5 V; IC = ic = 0 A; f = 1 MHz - 530 - pF [1] VCC = -6 V; IC = -0.5 A; IBon = -0.1 A; IBoff = 0.1 A Pulse test: tp 300 s; 0.02. PBHV9215Z_1 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 01 -- 11 December 2009 5 of 12 PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 006aab855 300 IB (mA) = -360 IC (A) (1) hFE 006aab856 -4.0 -3.2 200 (2) -288 -252 -216 -180 -144 -2.4 -324 -108 -72 -36 -1.6 (3) 100 -0.8 0 -10-1 -1 -10 -102 0 -103 -104 IC (mA) 0 VCE = -10 V -1 -2 -3 -4 -5 VCE (V) Tamb = 25 C (1) Tamb = 100 C (2) Tamb = 25 C (3) Tamb = -55 C Fig 4. DC current gain as a function of collector current; typical values 006aab857 -1.2 VBE (V) Fig 5. Collector current as a function of collector-emitter voltage; typical values 006aab858 -1.3 VBEsat (V) (1) -0.8 -0.9 (1) (2) (2) (3) (3) -0.4 -0.5 0 -10-1 -1 -10 -102 -103 -104 IC (mA) -0.1 -10-1 VCE = -10 V -1 (1) Tamb = -55 C (2) Tamb = 25 C (2) Tamb = 25 C (3) Tamb = 100 C -103 -104 IC (mA) (3) Tamb = 100 C Base-emitter voltage as a function of collector current; typical values Fig 7. Base-emitter saturation voltage as a function of collector current; typical values PBHV9215Z_1 Product data sheet -102 IC/IB = 5 (1) Tamb = -55 C Fig 6. -10 (c) NXP B.V. 2009. All rights reserved. Rev. 01 -- 11 December 2009 6 of 12 PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 006aab859 -1 006aab860 -1 VCEsat (V) VCEsat (V) -10-1 -10-1 (2) (1) (1) (3) (2) (3) -10-2 -10-1 -1 -10 -102 -103 -104 IC (mA) -10-2 -10-1 -1 -102 -103 -104 IC (mA) Tamb = 25 C IC/IB = 5 (1) Tamb = 100 C (1) IC/IB = 20 (2) Tamb = 25 C (2) IC/IB = 10 (3) Tamb = -55 C (3) IC/IB = 5 Fig 8. -10 Collector-emitter saturation voltage as a function of collector current; typical values 006aab861 103 Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values 006aab862 103 RCEsat () RCEsat () 102 102 10 10 (1) (1) 1 1 (2) (2) 10-1 10-1 (3) 10-2 -10-1 -1 -10 -102 -103 -104 IC (mA) (3) 10-2 -10-1 -1 -102 -103 -104 IC (mA) Tamb = 25 C IC/IB = 5 (1) Tamb = 100 C (1) IC/IB = 20 (2) Tamb = 25 C (2) IC/IB = 10 (3) Tamb = -55 C (3) IC/IB = 5 Fig 10. Collector-emitter saturation resistance as a function of collector current; typical values Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values PBHV9215Z_1 Product data sheet -10 (c) NXP B.V. 2009. All rights reserved. Rev. 01 -- 11 December 2009 7 of 12 PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 8. Test information VBB RB oscilloscope VCC RC Vo (probe) (probe) 450 oscilloscope 450 R2 VI DUT R1 mgd624 Fig 12. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9. Package outline 6.7 6.3 3.1 2.9 1.8 1.5 4 1.1 0.7 7.3 6.7 3.7 3.3 1 2 2.3 4.6 3 0.8 0.6 Dimensions in mm 0.32 0.22 04-11-10 Fig 13. Package outline SOT223 (SC-73) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBHV9215Z [1] Package SOT223 Description 8 mm pitch, 12 mm tape and reel 1000 4000 -115 -135 For further information and the availability of packing methods, see Section 14. PBHV9215Z_1 Product data sheet Packing quantity (c) NXP B.V. 2009. All rights reserved. Rev. 01 -- 11 December 2009 8 of 12 PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 11. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4x) (4x) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3x) 1.3 (3x) 6.15 sot223_fr Fig 14. Reflow soldering footprint SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3x) 2.7 preferred transport direction during soldering 2.7 1.1 1.9 (2x) sot223_fw Fig 15. Wave soldering footprint SOT223 (SC-73) PBHV9215Z_1 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 01 -- 11 December 2009 9 of 12 PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBHV9215Z_1 20091211 Product data sheet - - PBHV9215Z_1 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 01 -- 11 December 2009 10 of 12 PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. Definition [1] Please consult the most recently issued document before initiating or completing a design. [2] The term `short data sheet' is explained in section "Definitions". [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. 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Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PBHV9215Z_1 Product data sheet (c) NXP B.V. 2009. All rights reserved. Rev. 01 -- 11 December 2009 11 of 12 PBHV9215Z NXP Semiconductors 150 V, 2 A PNP high-voltage low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 Quality information . . . . . . . . . . . . . . . . . . . . . . 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8 Packing information . . . . . . . . . . . . . . . . . . . . . 8 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 10 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Contact information. . . . . . . . . . . . . . . . . . . . . 11 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2009. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 11 December 2009 Document identifier: PBHV9215Z_1