TSDF32830YS - Vishay Telefunken

VISHAY

TSDF32830YS

Document Number 85172

Rev. 1.1, 19-Jan-04

Vishay Semiconductors

www.vishay.com

CW WM7

456

321

18606

Electrostatic sensitive device.

Observe precautions for handling

Dual - MOSMIC®- two AGC Amplifiers for TV-Tuner Prestage

with Integrated Band Switch for One-Line Switching

Comments

MOSMIC - MOS Monolithic Integrated Circuit

Description

The Dual-MOSMIC® TSDF32830YS, assembled in

the well-known SOT363 plastic package, is a combi-

nation of two different MOSMIC® amplifiers with com-

mon Source and common Gate 2 leads and an

integrated switch. One of the MOSMIC stages is opti-

mized for use in VHF applications, especially regard-

ing cross modulation performance and noise figure at

lower VHF frequencies, whereas the other stage is

optimized for use in UHF applications regarding gain

and noise figure performance at higher frequencies of

UHF range. The integrated switch is operated by the

Gate 1 bias of the UHF amplifier on Pin 1. All of the

Gates are protected against excessive input voltage

surges by integrated antiserial diodes between them-

selves and Source. Drain output pin of each stage is

opposite to corresponding Gate 1 input pin what we

call SOT 363L pin configuration.

Features

• Two differently optimized amplifiers in a single

package. One of them has a fully internal self-bias-

ing network on chip and the other has a partly inte-

grated bias for easy Gate 1 switch-off with PNP

switching transistors inside PLL -IC

• Internal switch for saving lines on PCB layout as

well as external components

• Integrated gate protection diodes

• Low noise figure, high gain

• Typical forward transadmittance of 31 mS

resp. 28 mS

• Superior cross modulation at gain reduction

• High AGC-range with soft slope

• Main AGC control range from 3 V to 0.5 V

Applications

Low noise gain controlled VHF and UHF input stages

with 5 V supply voltage, such as in digital and analog

TV tuners and in other multimedia and communica-

tions equipment.

Mechanical Data

Weight: 6 mg

Case: SOT 363L

V - Vishay

Y - Year, is variable for digit from 0 to 9

(e.g. 3 = 2003, 4 = 2004)

CW - Calendar Week, is variable for

number from 01 to 52

Number of Calendar Week is always indicating

place of pin 1

Pinning:

1 = Gate 1 (UHF amplifier), 2 = Gate 2 (common)

3 = Gate 1 (VHF amplifier), 4 = Drain (VHF amplifier),

5 = Source (common), 6 = Gate1 (UHF amplifier)

AMP2

AMP1

AGC

= 5 V: UHF AMP is on; VHF AMP is off

VGG

VGG = 0 V: UHF AMP is off; VHF AMP is on

UHF

VHF

G2 (common)

S (common)

RFC

UHF

+5 V

RFC

18607

+5 V

RG1

out

VHF

out

(0 = shorted to Ground or open)

www.vishay.com

Document Number 85172

Rev. 1.1, 19-Jan-04

VISHAY

TSDF32830YS

Vishay Semiconductors

Parts Table

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Amplifier 1

Following data are valid for operating amplifier 2 (pin 3, 4, 2, 5) which is optimized for VHF applications

Amplifier 2

Following data are valid for operating amplifier 2 (pin 1, 6, 2, 5) which is optimized for UHF applications

Maximum Thermal Resistance

1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 µm Cu

Part Marking Package

TSDF32830YS WM7 SOT-363

Parameter Test condition Symbol Value Unit

Drain - source voltage VDS 8V

Drain current ID30 mA

Gate 1/Gate 2 - source peak

current

± IG1/G2SM 10 mA

Gate 1/Gate 2 - source voltage + VG1± VG2SM 6V

Gate 1 - source voltage - VG1SM 1.5 V

Total power dissipation Tamb ≤ 60 °C Ptot 200 mW

Channel temperature TCh 150 °C

Storage temperature range Tstg - 55 to + 150 °C

Parameter Test condition Symbol Value Unit

Drain - source voltage VDS 8V

Drain current ID25 mA

Gate 1/Gate 2 - source peak

current

± IG1/G2SM 10 mA

Gate 1/Gate 2 - source voltage + VG1/± VG2SM 6V

Gate 1 - source voltage - VG1SM 1.5 V

Total power dissipation Tamb ≤ 60 °C Ptot 200 mW

Channel temperature TCh 150 °C

Storage temperature range Tstg - 55 to + 150 °C

Parameter Test condition Symbol Value Unit

Channel ambient 1) RthChA 450 K/W

VISHAY

TSDF32830YS

Document Number 85172

Rev. 1.1, 19-Jan-04

Vishay Semiconductors

www.vishay.com

Electrical DC Characteristics

Tamb = 25 °C, unless otherwise specified

Amplifier 1

Following data are valid for operating amplifier 2 (pin 3, 4, 2, 5) which is optimized for VHF applications

Amplifier 2

Following data are valid for operating amplifier 2 (pin 1, 6, 2, 5) which is optimized for UHF applications

Parameter Test condition Symbol Min Typ. Max Unit

Gate 1 - source breakdown

voltage

+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS 710V

Gate 2 - source breakdown

voltage

± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 710V

Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 + IG1SS 50 µA

Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS 20 nA

Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,

Gate 1 = nc

IDSP 81317mA

Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, Gate 1 = nc,

ID = 20 µA

VG2S(OFF) 0.3 1.2 V

Parameter Test condition Symbol Min Typ. Max Unit

Drain - source breakdown

voltage

ID = 10 µA, VG2S = VG1S = 0 V(BR)DSS 15 V

Gate 1 - source breakdown

voltage

+ IG1S = 10 mA, VG2S = VDS = 0 + V(BR)G1SS 710V

± IG2S = 10 mA, VG1S = VDS = 0 ± V(BR)G2SS 710V

Gate 1 - source leakage current + VG1S = 5 V, VG2S = VDS = 0 + IG1SS 20 nA

Gate 2 - source leakage current ± VG2S = 5 V, VG1S = VDS = 0 ± IG2SS 20 nA

Drain - source operating current VDS = VRG1 = 5 V, VG2S = 4 V,

RG1 = 100 kΩ

IDSO 81217mA

Gate 1 - source cut-off voltage VDS = 5 V, VG2S = 4, ID = 20 µAV

G1S(OFF) 0.3 1.0 V

Gate 2 - source cut-off voltage VDS = VRG1 = 5 V, RG1 =100 kΩ,

ID = 20 µA

VG2S(OFF) 0.3 1.2 V

www.vishay.com

Document Number 85172

Rev. 1.1, 19-Jan-04

VISHAY

TSDF32830YS

Vishay Semiconductors

Electrical AC Characteristics

Tamb = 25 °C, unless otherwise specified

Amplifier 1

VDS = VRG1 = 5 V, VG2S = 4 V, Gate 1 = nc, ID = IDSP, f = 1 MHz, Tamb = 25 °C, unless otherwise specified

Following data are valid for operating amplifier 2 (pin 3, 4, 2, 5) which is optimized for VHF applications

Remark on improving intermodulation behavior:

By setting RG1 smaller than 56 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed.

Parameter Test condition Symbol Min Ty p. Max Unit

Forward transadmittance |y21s|232833mS

Gate 1 input capacitance Cissg1 2.2 2.7 pF

Feedback capacitance Crss 20 fF

Output capacitance Coss 1.0 pF

Power gain GS = 2 mS, BS = BSopt,

GL = 0.5 mS, BL = BLopt,

f = 200 MHz

Gps 32 dB

GS = 2 mS, BS = BSopt,

GL = 1 mS, BL = BLopt,

f = 400 MHz

Gps 28 dB

GS = 3.3 mS, BS = BSopt,

GL = 1 mS, BL = BLopt,

f = 800 MHz

Gps 22 dB

AGC range VDS = 5 V, VG2S = 0.5 to 4 V,

f = 200 MHz

Gps 50 dB

Noise figure GS = GL = 20 mS, BS = BL = 0,

f = 50 MHz

F4.06.0dB

GS = 2 mS, GL = 1 mS,

BS = BSopt, f = 400 MHz

F1.01.6dB

GS = 3.3 mS, GL = 1 mS,

BS = BSopt, f = 800 MHz

F1.52.3dB

Cross modulation Input level for

k = 1 % @ 0 dB

AGC fw = 50 MHz,

funw = 60 MHz

Xmod 90 dBµV

Input level for

k = 1 % @ 40 dB

AGC fw = 50 MHz,

funw = 60 MHz

Xmod 105 dBµV

VISHAY

TSDF32830YS

Document Number 85172

Rev. 1.1, 19-Jan-04

Vishay Semiconductors

www.vishay.com

Amplifier 2

VDS = VRG1 = 5 V, VG2S = 4 V, RG1 = 100 kΩ, ID = IDSO, f = 1 MHz, Tamb = 25 °C, unless otherwise specified

Following data are valid for operating amplifier 2 (pin 1, 6, 2, 5) which is optimized for UHF applications

Remark on improving intermodulation behavior:

By setting RG1 smaller than 100 kΩ, typical value of IDSO will raise and improved intermodulation behavior will be performed.

Parameter Test condition Symbol Min Typ. Max Unit

Forward transadmittance |y21s|27 31 35 mS

Gate 1 input capacitance Cissg1 1.7 2.1 pF

Feedback capacitance Crss 20 fF

Output capacitance Coss 0.9 pF

Power gain GS = 2 mS, BS = BSopt,

GL = 0.5 mS, BL = BLopt,

f = 200 MHz

Gps 33 dB

GS = 3.3 mS, BS = BSopt,

GL = 1 mS, BL = BLopt,

f = 400 MHz

Gps 30 dB

GS = 3.3 mS, BS = BSopt,

GL = 1 mS, BL = BLopt,

f = 800 MHz

Gps 25 dB

AGC range VDS = 5 V, VG2S = 0.5 to 4 V,

f = 800 MHz

Gps 40 50 dB

Noise figure GS = GL = 20 mS, BS = BL = 0,

f = 50 MHz

F5.07.0dB

GS = 2 mS, GL = 0.5 mS,

BS = BSopt, f = 400 MHz

F1.01.5dB

GS = 3.3 mS, GL = 1 mS,

BS = BSopt, f = 800 MHz

F1.32.0dB

Cross modulation Input level for

k = 1 % @ 0 dB

AGC fw = 50 MHz,

funw = 60 MHz

Xmod 90 dBµV

Input level for

k = 1 % @ 40 dB

AGC fw = 50 MHz,

funw = 60 MHz

Xmod 100 105 dBµV

www.vishay.com

Document Number 85172

Rev. 1.1, 19-Jan-04

VISHAY

TSDF32830YS

Vishay Semiconductors

Package Dimensions in mm

14280

VISHAY

TSDF32830YS

Document Number 85172

Rev. 1.1, 19-Jan-04

Vishay Semiconductors

www.vishay.com

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and

operatingsystems with respect to their impact on the health and safety of our employees and the public, as

well as their impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are

known as ozone depleting substances (ODSs).

The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs

and forbid their use within the next ten years. Various national and international initiatives are pressing for an

earlier ban on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the

use of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments

respectively

2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency (EPA) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design

and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each

customer application by the customer. Should the buyer use Vishay Semiconductors products for any

unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all

claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal

damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423