File No, 249 CRB RF Power Transistors Solid State 2N4932 ivision 2N4933 RCA-2N4932* and RCA-2N49334 are epitaxial silicon n-p-n planar transistors of the overlay emitter elec- trode construction. They are especially intended to pro- vide high power as classC rf amplifiers for International VHF Mobile and Portable Communications service (66 to 88 MHz). The 2N4932 is designed to operate from a 13.5- volt power supply; the 2N4933, from a 24-volt power sup- ply. The transistors feature protection against load mis- match. In the overlay structure, there are a number of indivi- dual emitter sites which are all connected in parallel and used in conjunction with a common collector region. When compared with other structures, this arrangement JEDEC TO0-60 For International VHF Mobile and Portable Communication, provides a substantial increase in emitter periphery for 66 to 88 MHz higher current or power, and a corresponding decrease in Operation From a Power Supply of emitter and collector areas for lower input and output 13.5 volts (2N4932) capacitances. The overlay structure thus offers greater 24 volts (2N4933) power output, gain, efficiency, frequency capability, and Power Output (Min.) at 88 MHz linearity. 12 watts (2N4932) 20 watts (2N4933) * Formerly RCA-Dev. No.TA2828 Load Protection 4 Formerly RCA-Dev. No.TA2792 High Voltage Ratings RATINGS DISSIPATION DERATING CURVE Maximum Ratings, Absolute-Maximum Values: 2N4932 | 284933 COLLECTOR-TO-BASE VOLTAGE ....-.-456. VcBo 50 70 = #V COLLECTOR-TO-EMITTER VOLTAGE: With base open........- Vero 28 35 OV Be With Vgp= -L5V....... Vory 50 70 OV ag EMITTER-TO-BASE VOLTAGE Vpgq 4.0 v a4 COLLECTOR CURRENT: FS Peak . 6... cece eee eee eee eee 10 A za Continuous .......6..- Iq 3.3 A 23 RF INPUT POWER........ Pin gs At 88 MHZ 2... 0 ee ee ee eee 3.5 W Below 88 MHZ... 2... 2 cee eee ee See Fig.7 TRANSISTOR DISSIPATION.. Pp At case temperatures up to 95 C.. eee 70 WwW At case temperatures above 25C ..... See Fig.1 TEMPERATURE RANGE: -100 -50 o 50 100 150 200 Storage & Operating (Junction) .... -65 to 200 C CASE TEMPERATURE - C LEAD TEMPERATURE (During soldering): 92LS-13I4 At distances > 1/32 in. from insulating wafer for 10s max....... 230 C Fig.1 92 12-66 File No. 249 2N4932, 2N4933 ELECTRICAL CHARACTERISTICS FOR 2N4932 Case Temperature = 25 C TEST CONDITIONS oc pc oc Characteristic Symbol Collector Base Current Limits Units Volts Volts (Milliamperes) Vos VcE VBE le ip I Min, | Max. logo 15 0 1.0 mA Collector-Cutoff Current lopo 40 0 10 mA a Collector-to- Emitter Vorvisus) a1.5 200! 50 Breakdown Voltage Voro(sus) 0 200 25 Emitter-to-Base BV 10 0 4 Vv Breakdown Voltage EBO Collector-to-Base Cop 15 0 120 pF Capacitance o| RF Power Output Pp 12 WwW (See Fig.2) out ELECTRICAL CHARACTERISTICS FOR 2N4933 Case Temperature = 25 TEST CONDITIONS oc bc oc Characteristic Symbol Collector Base Current Limits Units Volts Volts (Milliamperes) Ves VCE VBE le Ip te Min, | Max. IckoO 30 Qo 1.0 mA Collector-Cutoff Current TcBO 50 Q 10 mA 1.5 a fs Callector-to-Emitter VcEv'sus) 200 (0 Vv Breakdown Voltage Voro(sus) 0 2008 35 Vv Emitter-to-Base Breakdown Voltage BVEBO 10 9 4 Vv Collector-tc-Base Cop 30 0 85 pF Capacitance RF Power Output Pp b (See Fig.3) out 20 w Pulsed through an inductor (25mH), duty factor = 50% bPor P,, = 3.5 W, at 88 MHz; V,, = 24V, minimum efficiency = 70% For Pj, = 3.5 W, at 88 MHz; Vog = 13.5V, minimum efficiency = 70% 93 File No. 249 2N4932, 2N4933 RF AMPLIFIER CIRCUIT FOR POWER OUTPUT TEST (66 to 88 MHz Operation) 2N4932 5437 ba la (Pout) cxf W (2,250.0) coxa ca L ML = 7 4 13.5V OF S2LS-I3I5RI Cy = 7-100 pF L, = 1 turn, No.16 wire, 1/4" ID, 1/8" long Cy = 14-150 pF Lg = Ferrite Choke, Z = 450 om C3 = 1000 pF Ferroxcube #VK200 01- 3B" Cy = .05 uF Lg = 2 turns, No.16 wire, 1/4" ID, 3/8" long Cs = 70-350 pF Ly = 2 turns, No.10 wire, 1/2'ID, 1/2" long Cy; = 32-250 pF a = 2N4932 Ferroxcube Corp. of America Saugerties, N.Y. F ig. 2 2N4932 TYPICAL POWER OUTPUT vs POWER INPUT 2N4933 4 THHIZON oe (Pin) : crx (Pour? {Zg250 2) THA, 3 (250.0) L3 { cl 7 caxt 5 He ll 1 + oR = ca ce AL It I 24v O+ 92LS-I3I6RI 1 turn, No.16 wire, 1/4"ID, 1/8" long Ferrite Choke, Z = 450Q, C3, C5 = 1000 pF Ferroxcube #VK200 01-3B* C4, Cg = .05 UF Lg = 3.5 turns, No.16 wire, 1/4" ID, 1/2" long Cz = 70-350 pF Lg = 3 turns, No.10 wire, 1/2" ID, 3/4" long = 32-250 pF Q = 2N4933 R = 0.33 Q *Ferroxcube Corp. of America Saugerties, N.Y. Fig. 3 C1 = 7-100 pF Ly = Cy = 14-150 pF Lg = N4933 COLLECTOR- SUPPLY VOLTS (Vc) [3.5V CASE TEMPERATURE (T,)* 25C OPERATING FREQUENCY = 66 MHz OPERATING FREQUENCY = 88 MHz COLLECTOR- SUPPLY VOLTS (Veg) = 24v CASE TEMPERATURE (T%)= 25C OPERATING FREQUENCY =66 MHz OPERATING FREQUENCY =88 MHz Ty RF-POWER OUTPUT (Poyy)- WATTS AE TT RF POWER OUTPUT (Poyt )-WATTS Os LO Ls 20 25 3.0 3.5 LO 5 2.0 2.5 RF POWER INPUT (Pjy)-WATTS 92LS -1317 Fig. 4 SPECIAL, PERFORMANCE DATA The transistor can withstand any mismatch in load, which can be demonstrated in the following test: l. The test is performed using the arrangement in Fig.6. 2. The tuning stubis varied througha half wavelength, which effectively varies the load from an open circuit to a short circuit. 3. Operating conditions: V,.= 13.5V (2N4932), 24V (2N4933); RF input power = 3W @ 66 MHz. 4. Transistor Dissipation Rating must not be exceeded. During the above test, the transistor will not be damaged or degraded. RF POWER INPUT (Piy)- WATTS 92L5-1318 Fig. 5 BLOCK DIAGRAM FOR MISMATCH TEST RF AMPLIFIER CIRCUIT SEE FIG.2, 2N4932 OR FIG.3, 2N4933 DRIVER + >2 92LS-!319RI Fig. 6 94 File No. 249 2N4932, 2N4933 INPUT DERATING CURVE RF POWER INPUT (Piq)-WATTS 60 046 3 PINS 6306 oA. (NOTE 1) 480 tT, 1355 320 4 1 218 ABS 090 1 { 1 455 10-32 UNF 2A AREAD 1 ' 375 {NOTE 2} \ ' ' 920$-12045R5 i DIMENSIONS IN INCHES TERMINAL CONNECTIONS Case, Mounting Stud, Pin No.1 - Emitter Pin No.2 - Base Pin No.3 - Collector 70 80 90 INPUT FREQUENCY (fin) -MHz 92LS-1320 Fig. 7 DIMENSIONAL OUTLINE JEDEC TO-60 NOTE 1: The pin spacing permits insertion in any socket having 4 pin-circle diameter of 0.200" and contacts which will acconmodate pins having a diameter of 0.035" min., 0.046" max. NOTE 2: The torque applied to a 10-32 hex nut assembled on the thread during installation should not exceed 12 inch- pounds. NOTE 3: This device may be operated in any position. Ned REFERENCES 1. The Quverlay Transistor, Electronics, August 23, 1965. Part I - New Geometry Boosts Power, D. R. Carley, P. L. McGeough, and J. F. OBrien. Part Il - Putting the Overlay to Work at Hi-Frequency, Dr. D. J. Donahue and B. A. Jacoby. 2. Design Trade-Offs for RF Transistor Power Amplifiers, R. Minton, RCA Publication No.ST-3250. 3. Semiconductor High-Frequency Power Amplifier Design, R. Minton. RCA Publication No.ST-3230. 4. RF Power Transistors in Vehicular Radio Communications Equipment, S. Matyckas, RCA Publication No.ST-3219. 95