2N404A
Germanium PNP Transistor
Medium Speed Switch
TO5 Type Package
Absolute Maximum Ratings: (TA = +25C unless otherwise specified)
Collector−Base Voltage, VCBO −40V......................................................
Emitter−Base Voltage, VEBO −25V........................................................
Collector−Emitter Voltage (Note 1), VCE −35V..............................................
Collector Current, IC150mA.............................................................
Total Device Dissipation, PD
TA = +25C 150mW..............................................................
TA = +55C 90mW................................................................
TA = +71C 60mW................................................................
Storage Temperature Range, Tstg −65 to +100C..........................................
Note 1. Reach through voltage.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector−Base Breakdown Voltage V(BR)CBO IC = −20A−40 − − V
Emitter−Base Breakdown Voltage V(BR)EBO IE = −20A−25 − − V
Reach Through Voltage VRT −35 − − V
Collector Cutoff Current ICBO VCB = −12V − − −5A
TA = +80C− − −90 A
Emitter Cutoff Current IEBO VEB = 2.5V − − −2.5 A
Collector−Emitter Saturation Voltage VCE(sat) IB = 0.4mA, IC = −12mA − − −0.15 V
IB = 1mA, IC = 24mA − − −0.2 V
Base Input Voltage VBE IB = 0.4mA, IC = −12mA − − −0.35 V
IB = 1mA, IC = 24mA − − −0.4 V