© 2008 IXYS CORPORATION, All rights reserved DS99886A (3/08)
VDSS = 1200V
ID25 = 15A
RDS(on) ≤≤
≤≤
≤ 500mΩΩ
ΩΩ
Ω
trr ≤≤
≤≤
≤ 300ns
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C, RGS = 1MΩ1200 V
VGSS Continuous ± 30 V
VGSM Transient ± 40 V
ID25 TC= 25°C15A
IDM TC= 25°C, pulse width limited by TJM 60 A
IATC= 25°C13A
EAS TC= 25°C 1.5 J
dV/dt IS≤ IDM, VDD ≤ VDSS,T
J ≤ 150°C 15 V/ns
PDTC= 25°C 320 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TLMaximum lead temperature for soldering 300 °C
TSOLD Plastic body for 10s 260 °C
VISOL 50/60 Hz, RMS, 1 minute 2500 V~
FCMounting force 20..120/4.5..27 N/lb.
Weight 5g
G = Gate D = Drain
S = Source
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 3mA 1200 V
VGS(th) VDS = VGS, ID = 1mA 3.5 6.5 V
IGSS VGS = ± 30V, VDS = 0V ± 200 nA
IDSS VDS = VDSS 50 μA
VGS = 0V TJ = 125°C 5 mA
RDS(on) VGS = 10V, ID = 13A, Note 1 500 mΩ
Features
•Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
•Low drain to tab capacitance(<30pF)
•Low RDS (on) HDMOSTM process
•Rugged polysilicon gate cell structure
•Unclamped Inductive Switching (UIS)
rated
•Fast intrinsic Rectifier
Advantages
•Easy assembly
•Space savings
•High power density
Isolated Tab
ISOPLUS247 (IXFR)
E153432
IXFR26N120P
PolarTM Power MOSFET
HiPerFETTM
Applications:
zHigh Voltage Switched-mode and
resonant-mode power supplies
zHigh Voltage Pulse Power Applications
zHigh Voltage Discharge circuits in
Lasers Pulsers, Spark Igniters, RF
Generators
zHigh Voltage DC-DC converters
zHigh Voltage DC-AC inverters
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR26N120P
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS = 20V, ID = 13A, Note 1 13 21 S
Ciss 14 nF
Coss VGS = 0V, VDS = 25V, f = 1MHz 725 pF
Crss 50 pF
RGi Gate input resistance 1.5 Ω
td(on) Resistive Switching Times 56 ns
trVGS = 10V, VDS = 0.5 • VDSS, ID = 13A 55 ns
td(off) RG= 1Ω (External) 76 ns
tf 58 ns
Qg(on) 225 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 13A 87 nC
Qgd 98 nC
RthJC 0.39 °C/W
RthCS 0.15 °C/W
Source-Drain Diode Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0V 26 A
ISM Repetitive, pulse width limited by TJM 104 A
VSD IF = IS, VGS = 0V, Note 1 1.5 V
trr 300 ns
QRM 1.3 μC
IRM 12 A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t ≤ 300μs; duty cycle, d ≤ 2%.
IF = 13A, -di/dt = 100A/μs
VR = 100V, VGS = 0V
ISOPLUS247 (IXFR) Outline
© 2008 IXYS CORPORATION, All rights reserved
IXFR26N120P
Fi g. 1. Ou tp ut C h ar acter istic s
@ 25ºC
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0123456789101112
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
9V
7V
8V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
5
10
15
20
25
30
35
40
45
50
0 3 6 9 12 15 18 21 24 27 30
V
DS
- Volts
I
D
- Am peres
V
GS
= 10
V
7V
9V
8V
Fig. 3. Output Characteristics
@ 125ºC
0
2
4
6
8
10
12
14
16
18
20
22
24
26
0 2 4 6 8 101214161820222426
V
DS
- Volts
I
D
- Am peres
V
GS
= 10V
9V
7V
8V
6V
Fig. 4. RDS(on) Normalized to ID = 13A Valu e
vs. Ju ncti o n Temper atu r e
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
-50-250 255075100125150
T
J
- Degrees Centi grad e
R
DS(on)
- N orma lized
V
GS
= 10V
I
D
= 26A
I
D
= 13A
Fig. 5. RDS(on) Normalized to ID = 13A Value
vs. Dr ai n C u rrent
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 5 10 15 20 25 30 35 40 45 50
I
D
- Amp eres
R
DS(on)
- N orma lized
V
GS
= 10V
T
J
= 125ºC
T
J
= 25ºC
Fi g . 6 . Maximu m D r ai n C u r ren t vs.
Cas e Temper atu re
0
2
4
6
8
10
12
14
16
-50-250255075100125150
T
C
- Degrees Centigrade
I
D
- A m peres
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFR26N120P
IXYS REF: F_26N120P(96) 3-28-08-B
Fig. 7. Input Admittance
0
5
10
15
20
25
30
5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
V
GS
- V olt s
I
D
- Am peres
T
J
= 125ºC
25ºC
- 40ºC
Fig. 8. Tr ansconductance
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25 30 35
I
D
- Amp eres
g
f s
- S iem ens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
10
20
30
40
50
60
70
80
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
V
SD
- Vo lts
I
S
- Am peres
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
2
4
6
8
10
12
14
16
0 40 80 120 160 200 240 280 320
Q
G
- Nan oCoul omb s
V
GS
- V o lt s
V
DS
= 600V
I
D
= 13A
I
G
= 10mA
Fig. 11. Capacitance
10
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- V olts
Capacitance - PicoFarads
f
= 1 MH
z
Ciss
Crss
Coss
Fi g . 12. Maximum Tran sien t Ther mal
Impedance
0.001
0.010
0.100
1.000
0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
