PolarTM Power MOSFET HiPerFETTM IXFR26N120P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1200 V VDGR TJ = 25C to 150C, RGS = 1M 1200 V VGSS Continuous 30 V VGSM Transient 40 V ID25 TC = 25C 15 A IDM TC = 25C, pulse width limited by TJM 60 A IA TC = 25C 13 A EAS TC = 25C 1.5 J dV/dt IS IDM, VDD VDSS, TJ 150C 15 V/ns PD TC = 25C 320 W -55 ... +150 C TJM 150 C Tstg -55 ... +150 C TL Maximum lead temperature for soldering 300 C TSOLD Plastic body for 10s 260 C VISOL 50/60 Hz, RMS, 1 minute 2500 V~ FC Mounting force 20..120/4.5..27 N/lb. 5 g Weight 1200V 15A 500m 300ns ISOPLUS247 (IXFR) E153432 Symbol TJ = = Isolated Tab G = Gate S = Source D = Drain Features * Silicon chip on Direct-Copper-Bond * * * * * substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Advantages * * * Easy assembly Space savings High power density Applications: Symbol Test Conditions (TJ = 25C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 13A, Note 1 V 6.5 V 200 nA z z z z z TJ = 125C (c) 2008 IXYS CORPORATION, All rights reserved 50 A 5 mA High Voltage Switched-mode and resonant-mode power supplies High Voltage Pulse Power Applications High Voltage Discharge circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC converters High Voltage DC-AC inverters 500 m DS99886A (3/08) IXFR26N120P Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 13A, Note 1 13 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss ISOPLUS247 (IXFR) Outline 21 S 14 nF 725 pF 50 pF RGi Gate input resistance 1.5 td(on) Resistive Switching Times 56 ns tr VGS = 10V, VDS = 0.5 * VDSS, ID = 13A 55 ns td(off) RG = 1 (External) 76 ns 58 ns 225 nC 87 nC 98 nC tf Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 13A Qgd 0.39 C/W RthJC RthCS 0.15 Source-Drain Diode TJ = 25C unless otherwise specified) IS VGS = 0V ISM VSD trr QRM IRM C/W Characteristic Values Min. Typ. Max. 26 A Repetitive, pulse width limited by TJM 104 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 13A, -di/dt = 100A/s VR = 100V, VGS = 0V 1.3 C 12 A Note 1: Pulse test, t 300s; duty cycle, d 2%. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFR26N120P Fig. 1. Output Characteristics @ 25C Fig. 2. Extended Output Characteristics @ 25C 26 50 VGS = 10V 9V 24 22 40 20 9V 35 ID - Amperes 18 ID - Amperes VGS = 10V 45 16 14 8V 12 10 8 30 25 20 8V 15 6 10 4 7V 5 2 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 3 6 9 26 18 21 24 27 30 2.8 VGS = 10V 9V 24 2.6 22 VGS = 10V 2.4 18 RDS(on) - Normalized 20 ID - Amperes 15 Fig. 4. RDS(on) Normalized to ID = 13A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125C 8V 16 14 12 10 7V 8 2.2 2.0 I D = 26A 1.8 I D = 13A 1.6 1.4 1.2 1.0 6 0.8 4 6V 2 0.6 0 0.4 0 2 4 6 8 10 12 14 16 18 20 22 24 26 -50 -25 0 VDS - Volts 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 13A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 16 2.4 VGS = 10V 2.2 14 TJ = 125C 2 12 1.8 ID - Amperes RDS(on) - Normalized 12 VDS - Volts VDS - Volts 1.6 1.4 1.2 10 8 6 4 TJ = 25C 1 2 0.8 0 0 5 10 15 20 25 30 ID - Amperes (c) 2008 IXYS CORPORATION, All rights reserved 35 40 45 50 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 125 150 IXFR26N120P Fig. 8. Transconductance Fig. 7. Input Admittance 30 40 TJ = - 40C 35 TJ = 125C 25C - 40C 20 30 g f s - Siemens ID - Amperes 25 15 10 25C 25 20 125C 15 10 5 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 VGS - Volts 20 25 30 35 Fig. 10. Gate Charge 80 16 70 14 60 12 50 10 VGS - Volts IS - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 TJ = 125C 30 15 ID - Amperes TJ = 25C 20 VDS = 600V I D = 13A I G = 10mA 8 6 4 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 0 40 80 VSD - Volts 120 160 200 240 280 320 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 100,000 1.000 f = 1 MHz 10,000 Z(th)JC - C / W Capacitance - PicoFarads Ciss Coss 1,000 0.100 0.010 100 Crss 10 0 5 10 15 20 25 30 35 40 VDS - Volts 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS REF: F_26N120P(96) 3-28-08-B