Transys Electronics L I M I T E D TO-220 Plastic-Encapsulated Transistors 3DD13005 TRANSISTOR (NPN) TO-220 FEATURES Power dissipation 1. BASE 2. COLLECTOR PCM: 1.5 W (Tamb=25) 3. EMITTER Collector current 4 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Symbol 123 unless otherwise specified) Test conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 1000A, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1000A, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 1000 A Collector cut-off current ICEO VCE= 400V, IB=0 100 A Emitter cut-off current IEBO VEB=9V, IC=0 1000 A DC current gain hFE VCE= 5V, IC= 1000mA Collector-emitter saturation voltage VCE (sat) IC=2000mA, IB=500 mA 0.6 V Base-emitter saturation voltage VBE (sat) IC=2000mA, IB= 500mA 1.6 V VCE=10 V, IC=500mA Transition Frequency f T Fall time t f Storage time ts f = 1MHz 10 40 5 MHz IB1=-IB2=0.4A, IC=2A 0.9 s VCC=120V 4 s CLASSIFICATION OF hFE Rank Range 10-15 15-20 20-25 25-30 30-35 35-40