3DD13005 - Transys Electronics

TO-220 Plastic-Encapsulated Transistors

3DD13005 TRANSISTOR (NPN)

FEATURES

Power dissipation

PCM: 1.5 W (Tamb=25℃)

Collector current

ICM: 4 A

Collector-base voltage

V(BR)CBO: 700 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Collector-base br eakdown voltage V(BR)CBO Ic= 1000µA, IE=0 700 V

Collector-emitter breakdown voltage V(BR)CEO Ic= 10mA, IB=0 400 V

E mitter-base breakdow n vol t age V(BR)EBO I

E= 1000µA, IC=0 9 V

Collector cut-off current ICBO V

CB= 700V, IE=0 1000 µA

Collector cut-off current ICEO V

CE= 400V, IB=0 100 µA

Emitte r c u t-of f c u rren t IEBO V

EB=9V, IC=0 1000 µA

DC current gain hFE V

CE= 5V, IC= 1000mA 10 40

Collector-emitter saturati on voltage VCE (sa t) I C=2000mA , IB=500 mA 0.6 V

Base-emitter satu ration voltage VBE (sat) IC=2000mA, IB= 500mA 1.6 V

Transition Frequency f T VCE=10 V, IC=500 mA

f = 1MHz 5 MHz

Fall time t f 0.9 µs

Storage time t s

IB1=-IB2=0.4A, IC=2A

VCC=120V 4 µs

CLASSIFICATION OF hFE

Rank

Range 10-15 15-20 20-25 25-30 30-35 35-40

1 2 3

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

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