FF600R17ME4 EconoDUALTM3/IGBT4anddiodeand NTC EconoDUALTM3modulewithTrench/FieldstopIGBT4andEmitterControlleddiodeandNTC VCES = 1700V IC nom = 600A / ICRM = 1200A * * TypicalApplications * Highpowerconverters * Windturbines * * VCEsat * Tvjop=150C * VCEsat ElectricalFeatures * Highcurrentdensity * LowVCEsat * Tvjop=150C * VCEsatwithpositivetemperaturecoefficient * * * MechanicalFeatures * Highpowerdensity * Isolatedbaseplate * Standardhousing ModuleLabelCode BarcodeCode128 DMX-Code Datasheet www.infineon.com ContentoftheCode Digit ModuleSerialNumber ModuleMaterialNumber ProductionOrderNumber Datecode(ProductionYear) Datecode(ProductionWeek) 1-5 6-11 12-19 20-21 22-23 PleasereadtheImportantNoticeandWarningsattheendofthisdocument V3.0 2016-11-08 FF600R17ME4 IGBT- /IGBT,Inverter /MaximumRatedValues Collector-emittervoltage Tvj = 25C VCES 1700 V DC ContinuousDCcollectorcurrent TC = 108C, Tvj max = 175C TC = 25C, Tvj max = 175C IC nom IC 600 950 Repetitivepeakcollectorcurrent tP = 1 ms ICRM 1200 A VGES +/-20 V Gate-emitterpeakvoltage /CharacteristicValues Collector-emittersaturationvoltage min. IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V IC = 600 A, VGE = 15 V Tvj = 25C Tvj = 125C Tvj = 150C VCE sat A A typ. max. 1,95 2,35 2,45 2,30 V V V 5,80 6,40 V Gatethresholdvoltage IC = 24,0 mA, VCE = VGE, Tvj = 25C Gatecharge VGE = -15 V ... +15 V QG 6,15 C Internalgateresistor Tvj = 25C RGint 1,2 Inputcapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cies 48,0 nF Reversetransfercapacitance f = 1 MHz, Tvj = 25C, VCE = 25 V, VGE = 0 V Cres 1,55 nF Collector-emittercut-offcurrent VCE = 1700 V, VGE = 0 V, Tvj = 25C ICES 1,0 mA Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25C IGES 100 nA VGEth Turn-ondelaytime,inductiveload IC = 600 A, VCE = 900 V VGE = 15 V RGon = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C Risetime,inductiveload IC = 600 A, VCE = 900 V VGE = 15 V RGon = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C Turn-offdelaytime,inductiveload IC = 600 A, VCE = 900 V VGE = 15 V RGoff = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C Falltime,inductiveload IC = 600 A, VCE = 900 V VGE = 15 V RGoff = 1,0 Tvj = 25C Tvj = 125C Tvj = 150C Turn-onenergylossperpulse IC = 600 A, VCE = 900 V, LS = 35 nH Tvj = 25C VGE = 15 V, di/dt = 6500 A/s (Tvj = 150C) Tvj = 125C RGon = 1,0 Tvj = 150C Turn-offenergylossperpulse 5,20 0,20 0,21 0,24 s s s 0,07 0,08 0,08 s s s 0,62 0,75 0,80 s s s 0,11 0,16 0,18 s s s Eon 140 210 225 mJ mJ mJ IC = 600 A, VCE = 900 V, LS = 35 nH Tvj = 25C VGE = 15 V, du/dt = 3000 V/s (Tvj = 150C) Tvj = 125C RGoff = 1,0 Tvj = 150C Eoff 115 180 205 mJ mJ mJ SCdata VGE 15 V, VCC = 1000 V VCEmax = VCES -LsCE *di/dt ISC 3000 2300 A A Thermalresistance,junctiontocase IGBT/perIGBT RthJC Thermalresistance,casetoheatsink IGBT/perIGBT Paste=1W/(m*K)/grease=1W/(m*K) RthCH tP 10 s, Tvj = 25C tP 10 s, Tvj = 150C Temperatureunderswitchingconditions Datasheet td on tr td off tf Tvj op 2 0,0369 K/W 0,0328 -40 K/W 150 C V3.0 2016-11-08 FF600R17ME4 Diode/Diode,Inverter /MaximumRatedValues Repetitivepeakreversevoltage Tvj = 25C DC ContinuousDCforwardcurrent Repetitivepeakforwardcurrent tP = 1 ms It-value VR = 0 V, tP = 10 ms, Tvj = 125C VR = 0 V, tP = 10 ms, Tvj = 150C VRRM 1700 V IF 600 A IFRM 1200 A It 32000 30500 /CharacteristicValues min. As As typ. max. 2,20 VF 1,80 1,90 1,95 IF = 600 A, - diF/dt = 6500 A/s (Tvj=150C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 150C IRM 580 650 670 A A A Recoveredcharge IF = 600 A, - diF/dt = 6500 A/s (Tvj=150C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 150C Qr 150 250 285 C C C Reverserecoveryenergy IF = 600 A, - diF/dt = 6500 A/s (Tvj=150C) Tvj = 25C VR = 900 V Tvj = 125C VGE = -15 V Tvj = 150C Erec 75,0 145 165 mJ mJ mJ Thermalresistance,junctiontocase /Diode/perdiode RthJC Thermalresistance,casetoheatsink /Diode/perdiode Paste=1W/(m*K)/grease=1W/(m*K) RthCH Forwardvoltage IF = 600 A, VGE = 0 V IF = 600 A, VGE = 0 V IF = 600 A, VGE = 0 V Tvj = 25C Tvj = 125C Tvj = 150C Peakreverserecoverycurrent Temperatureunderswitchingconditions Tvj op V V V 0,0730 K/W 0,0378 -40 K/W 150 C NTC-/NTC-Thermistor /CharacteristicValues min. typ. max. Ratedresistance TNTC = 25C R100 DeviationofR100 TNTC = 100C, R100 = 493 Powerdissipation TNTC = 25C B- B-value R2 = R25 exp [B25/50(1/T2 - 1/(298,15 K))] B25/50 3375 K B- B-value R2 = R25 exp [B25/80(1/T2 - 1/(298,15 K))] B25/80 3411 K B- B-value R2 = R25 exp [B25/100(1/T2 - 1/(298,15 K))] B25/100 3433 K R25 R/R 5,00 -5 P25 k 5 % 20,0 mW Specificationaccordingtothevalidapplicationnote. Datasheet 3 V3.0 2016-11-08 FF600R17ME4 /Module Isolationtestvoltage RMS, f = 50 Hz, t = 1 min. VISOL 3,4 kV Cu Materialofmodulebaseplate Internalisolation (1,IEC61140) basicinsulation(class1,IEC61140) Al2O3 Creepagedistance -/terminaltoheatsink -/terminaltoterminal 14,5 13,0 mm Clearance -/terminaltoheatsink -/terminaltoterminal 12,5 10,0 mm Comperativetrackingindex CTI Strayinductancemodule Moduleleadresistance,terminals-chip TC=25C,//perswitch Storagetemperature nH RCC'+EE' 1,10 m Tstg -40 125 C 6,00 Nm 6,0 Nm M 3,00 Terminalconnectiontorque M6 ScrewM6-Mountingaccordingtovalidapplicationnote M 3,0 G 4 max. 20 M5 ScrewM5-Mountingaccordingtovalidapplicationnote Datasheet typ. LsCE Mountingtorqueformodulmounting Weight > 200 min. 345 g V3.0 2016-11-08 FF600R17ME4 IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) VGE=15V IGBT- (Typical) outputcharacteristicIGBT,Inverter(typical) IC=f(VCE) Tvj=150C 1200 1200 Tvj = 25C Tvj = 125C Tvj = 150C 800 800 IC [A] 1000 IC [A] 1000 600 600 400 400 200 200 0 0,0 0,5 1,0 1,5 2,0 VCE [V] 2,5 3,0 3,5 0 4,0 IGBT- (Typical) transfercharacteristicIGBT,Inverter(typical) IC=f(VGE) VCE=20V VGE = 20V VGE = 15V VGE = 12V VGE = 10V VGE = 9V VGE = 8V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VCE [V] 3,5 4,0 4,5 5,0 IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(IC),Eoff=f(IC) VGE=15V,RGon=1,RGoff=1,VCE=900V 1200 1000 Tvj = 25C Tvj = 125C Tvj = 150C Eon, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 125C Eoff, Tvj = 150C 900 1000 800 700 800 E [mJ] IC [A] 600 600 500 400 400 300 200 200 100 0 5 Datasheet 6 7 8 9 VGE [V] 10 11 12 0 13 5 0 200 400 600 IC [A] 800 1000 1200 V3.0 2016-11-08 FF600R17ME4 IGBT- (Typical) switchinglossesIGBT,Inverter(typical) Eon=f(RG),Eoff=f(RG) VGE=15V,IC=600A,VCE=900V IGBT- transientthermalimpedanceIGBT,Inverter ZthJC=f(t) 800 0,1 Eon, Tvj = 125C Eon, Tvj = 150C Eoff, Tvj = 125C Eoff, Tvj = 150C 700 ZthJC : IGBT 600 ZthJC [K/W] E [mJ] 500 400 0,01 300 200 i: 1 2 3 4 ri[K/W]: 0,0017 0,00225 0,03078 0,00216 i[s]: 0,00053 0,00324 0,03234 8,13887 100 0 0 1 2 3 4 5 6 RG [] 7 8 9 10 11 IGBT- RBSOA) reversebiassafeoperatingareaIGBT,Inverter(RBSOA) IC=f(VCE) VGE=15V,RGoff=1,Tvj=150C 1400 0,001 0,001 0,01 0,1 t [s] 1 10 Diodetypical) forwardcharacteristicofDiode,Inverter(typical) IF=f(VF) 1200 IC, Modul IC, Chip Tvj = 25C Tvj = 125C Tvj = 150C 1200 1000 1000 800 IF [A] IC [A] 800 600 600 400 400 200 200 0 0 Datasheet 200 400 600 0 800 1000 1200 1400 1600 1800 VCE [V] 6 0,0 0,5 1,0 1,5 VF [V] 2,0 2,5 3,0 V3.0 2016-11-08 FF600R17ME4 Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(IF) RGon=1,VCE=900V Diode(Typical) switchinglossesDiode,Inverter(typical) Erec=f(RG) IF=600A,VCE=900V 200 200 Erec, Tvj = 125C Erec, Tvj = 150C 180 160 160 140 140 120 120 E [mJ] E [mJ] 180 100 100 80 80 60 60 40 40 20 20 0 0 200 400 Erec, Tvj = 125C Erec, Tvj = 150C 600 IF [A] 800 1000 0 1200 Diode transientthermalimpedanceDiode,Inverter ZthJC=f(t) 0 1 2 3 4 5 6 RG [] 7 8 9 10 11 NTC- NTC-Thermistor-temperaturecharacteristic(typical) R=f(T) 0,1 100000 ZthJC : Diode Rtyp R[] ZthJC [K/W] 10000 0,01 1000 i: 1 2 3 4 ri[K/W]: 0,0081 0,0526 0,00697 0,00531 i[s]: 0,00088 0,029 0,17225 5,18101 0,001 0,001 Datasheet 0,01 0,1 t [s] 1 10 100 7 0 20 40 60 80 100 TNTC [C] 120 140 160 V3.0 2016-11-08 FF600R17ME4 /Circuitdiagram /Packageoutlines Infineon Datasheet 8 V3.0 2016-11-08 TrademarksofInfineonTechnologiesAG HVICTM,IPMTM,PFCTM,AU-ConvertIRTM,AURIXTM,C166TM,CanPAKTM,CIPOSTM,CIPURSETM,CoolDPTM,CoolGaNTM,COOLiRTM, CoolMOSTM,CoolSETTM,CoolSiCTM,DAVETM,DI-POLTM,DirectFETTM,DrBladeTM,EasyPIMTM,EconoBRIDGETM,EconoDUALTM, EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,GaNpowIRTM,HEXFETTM,HITFETTM,HybridPACKTM,iMOTIONTM, IRAMTM,ISOFACETM,IsoPACKTM,LEDrivIRTM,LITIXTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OPTIGATM,OptiMOSTM, ORIGATM,PowIRaudioTM,PowIRStageTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,StrongIRFETTM,SupIRBuckTM,TEMPFETTM,TRENCHSTOPTM,TriCoreTM,UHVICTM,XHPTM,XMCTM TrademarksupdatedNovember2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. Edition2016-11-08 Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2016InfineonTechnologiesAG. AllRightsReserved. Doyouhaveaquestionaboutthisdocument? Email:erratum@infineon.com www.infineon.com IMPORTANTNOTICE Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie").Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationoftheproduct,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitationwarrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthisdocumentandany applicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseoftheproductofInfineonTechnologies incustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer'stechnical departmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproductinformationgivenin thisdocumentwithrespecttosuchapplication. Forfurtherinformationontheproduct,technology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon Technologiesoffice(www.infineon.com). WARNINGS Duetotechnicalrequirementsproductsmaycontaindangeroussubstances.Forinformationonthetypesinquestionpleasecontactyour nearestInfineonTechnologiesoffice. ExceptasotherwiseexplicitlyapprovedbyInfineonTechnologiesinawrittendocumentsignedbyauthorizedrepresentativesofInfineon Technologies,InfineonTechnologies'productsmaynotbeusedinanyapplicationswhereafailureoftheproductoranyconsequencesof theusethereofcanreasonablybeexpectedtoresultinpersonalinjury.