AOD4186 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for low voltage inverter applications. VDS (V) =40V ID = 35A (VGS = 10V) RDS(ON) < 15m (VGS = 10V) RDS(ON) < 19m (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! TO-252 D-PAK Top View D Bottom View D G G S S S G Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25C Continuous Drain Current G Pulsed Drain Current C V A 70 10 IDSM TA=70C 20 27 IDM TA=25C Continuous Drain Current Units V 35 ID TC=100C Maximum 40 A 8 Avalanche Current C IAR 24 A Repetitive avalanche energy L=0.1mH C EAR 29 mJ TC=25C Power Dissipation B TC=100C TA=25C Power Dissipation A Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. 2.5 W 1.6 TJ, TSTG -55 to 175 Symbol t 10s Steady-State Steady-State W 25 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 50 PD RJA RJC Typ 16.7 40 2.5 C Max 25 50 3 Units C/W C/W C/W www.aosmd.com AOD4186 Electrical Characteristics (T J=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250A, VGS=0V VDS=40V, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS= 20V VGS(th) ID(ON) Gate Threshold Voltage VDS=VGS ID=250A 1.7 On state drain current VGS=10V, VDS=5V 100 RDS(ON) Static Drain-Source On-Resistance TJ=55C 5 VGS=10V, ID=20A TJ=125C VGS=4.5V, ID=15A Forward Transconductance VSD Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current VDS=5V, ID=20A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time Units V 1 Zero Gate Voltage Drain Current gFS Max 40 IDSS IS Typ VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=20V, ID=20A 2.2 A 100 nA 2.7 V A 12.4 15 20 24 14.5 19 m m 60 0.75 S 1 V 60 A 780 980 1200 pF 90 130 170 pF 48 80 110 pF 1.9 3.8 5.7 13.5 17 20 nC 7 9 11 nC 2 2.5 3 nC 2.7 4.5 6.3 nC VGS=10V, VDS=20V, RL=1.0, RGEN=3 6 ns 12 ns 26 ns 7 ns trr Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/s 9 12 15 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 24 31 38 ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. Rev 1 : May-09 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4186 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 80 6V 10V VDS=5V 4.5V 60 60 ID(A) ID (A) 4V 40 40 125C 20 20 25C VGS=3.5V 0 0 0 1 2 3 4 0 5 1 20 3 4 5 6 Normalized On-Resistance 2 18 RDS(ON) (m) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=4.5V 16 14 VGS=10V 12 10 1.8 VGS=10V ID=20A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=15A 1 0.8 8 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 200 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 40 1.0E+02 ID=20A 1.0E+01 35 25 IS (A) RDS(ON) (m) 40 1.0E+00 30 125C 20 125C 1.0E-01 1.0E-02 25C 1.0E-03 25C 15 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AOD4186 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1500 VDS=20V ID=20A 1200 Capacitance (pF) VGS (Volts) 8 6 4 900 600 Coss 2 300 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics Ciss 20 Crss 0 10 20 30 VDS (Volts) Figure 8: Capacitance Characteristics 40 200 100.0 10.0 10s 160 100s DC 1ms 10ms 1.0 TJ(Max)=175C TC=25C 0.1 0.01 0.1 120 17 TJ(Max)=175C TC=25C 5 80 2 10 40 1 VDS (Volts) 10 100 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) ZJC Normalized Transient Thermal Resistance Power (W) ID (Amps) 10s RDS(ON) limited In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RJC=3C/W 1 PD 0.1 Single Pulse Ton 0.01 0.00001 0.0001 0.001 0.01 0.1 T 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4186 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 Power Dissipation (W) IAR(A) Peak Avalanche Current 60 TA=25C TA=100C TA=150C 50 40 30 20 10 TA=125C 0 10 0.000001 0 0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 100 150 175 10000 60 TA=25C 50 1000 40 Power (W) Current rating ID(A) 125 TCASE (C) Figure 13: Power De-rating (Note F) 30 17 5 2 10 100 20 10 10 1 0.00001 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F) ZJA Normalized Transient Thermal Resistance 10 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 0.001 40 RJA=50C/W 0.1 Single Pulse PD 0.01 Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Alpha & Omega Semiconductor, Ltd. www.aosmd.com AOD4186 Gate Charge Test Circuit & W aveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Isd L Vgs Ig Alpha & Omega Semiconductor, Ltd. + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com