DG180/181/182 High-Speed Drivers with Dual SPST JFET Switches Features Benefits Applications Constant On-Resistance Over Entire Analog Range Low Leakage Low Crosstalk Rad Hardness Low Distortion Eliminates Large Signal Errors High Precision High Bandwidth Capability Fault Protection Audio Switching Video Switching Sample/Hold Guidance and Control Systems Aerospace Description The DG180/181/182 are precision dual single-pole, single-throw (SPST) analog switches designed to provide accurate switching of video and audio signals. This series is ideally suited for applications requiring a constant on-resistance over the entire analog range. on-resistance include audio switching, video switching, and data acquisition. To achieve fast and accurate switch performance, each device comprises four n-channel JFET transistors and a TTL compatible bipolar driver. In the on state, each switch conducts current equally well in either direction. In the off condition, the switches will block up to 20 V peak-to-peak, with feedthrough of less than -60 dB at 10 MHz. The major difference in the devices is the on-resistance (DG180--10 , DG181--30 , DG182--75 Reduced errors are achieved through low leakage current (ID(on) < 2 nA). Applications which benefit from the flat JFET Functional Block Diagram and Pin Configuration S1 1 14 S2 S2 S1 1 14 S2 D1 2 13 D2 D1 2 13 D2 NC 3 12 NC NC 3 12 NC NC 4 11 NC NC 4 Flat 11 Package NC IN1 5 Top View 10 IN2 IN1 V+ VL 5 6 Dual-In-Line Top View 7 10 IN2 V+ 6 9 V-* 9 V- VL 7 8 VR 8 VR S1 9 D1 2 IN1 8 3 7 Metal Can Top View 6 4 Refer to JAN38510 Information, Military Section D2 10 1 V+ 5 VR VL *Common to Substrate and Case Truth Table Logic Switch 0 1 ON OFF Logic "0" 0 0.8 V Logic "1" 2.0 20V Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70031. Siliconix S-52895--Rev. D, 16-Jun-97 1 IN2 V- DG180/181/182 Ordering Information Temp Range Package -25toto8585_C _C 10-Pin Metal Can 14-Pin Sidebraze Part Number 10-Pin Metal Can -55 to 125_C 14-Pin Sidebraze 14-Pin Flat Pack DG181BA DG180BP DG180AA/883, 5962-8767301IA DG181AA/883, JM38510/11101BIA DG182AA/883, JM38510/11102BIA DG180AP/883, 5962-8767301CA DG181AP/883, JM38510/11101BCA DG182AP/883, JM38510/11102BCA 5962-8767301XA JM38510/11101BXA JM38510/11102BXA Absolute Maximum Ratings V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V V+ to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V VD to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V VD to VD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 V VL to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36 V VL to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V VL to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V VIN to VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 V VR to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27 V VR to VIN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 V Current (S or D) DG180 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA Current (S or D) DG181, DG182 . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current (All Other Pins) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Power Dissipationa 10-Pin Metal Canb . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 14-Pin Sidebrazec . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW 14-Pin Flat Packd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 900 mW Notes: a. All leads welded or soldered to PC Board. b. Derate 6 mW/_C above 75_C c. Derate 11 mW/_C above 75_C d. Derate 10 mW/_C above 75_C Schematic Diagram (Typical Channel) V+ VL S IN D VR V- Figure 1. 2 Siliconix S-52895--Rev. D, 16-Jun-97 DG180/181/182 Specificationsa for DG180 Test Conditions Unless Otherwise Specified Parameter Symbol V = 15 V, V V- V = -15 15 V, V VL = 5 V V+ VR = 0 V, VIN = 2 V, 0.8 Vf Tempb Typc A Suffix B Suffix -55 to 125_C -25 to 85_C Mind Maxd Mind Maxd Unit -7.5 15 -7.5 15 V Analog Switch Analog Signal Rangee Drain-Source On-Resistance Source Off L k Leakage C Current VANALOG rDS(on) Full IS = -10 mA, VD = -7.5 V Room Full 7.5 10 20 15 25 VS = "10 V, VD = #10 V V+ = 10 V, V- = -20 V Room Hot 0.05 10 1000 15 300 VS = "7.5 V, VD = #7.5 V Room Hot 0.05 10 1000 15 300 VS = "10 V, VD = #10 V V+ = 10 V, V- = -20 V Room Hot 0.04 10 1000 15 300 VS = "7.5 V, VD = #7.5 V Room Hot 0.03 10 1000 15 300 IS(off) Drain Off L k Leakage C Current ID(off) Channel On Leakage Current ID(on) VD = VS = "7.5 V Room Hot -0.1 Saturation Drain Current IDSS 2 ms Pulse Duration Room 300 Input Current with Input Voltage High IINH VIN = 5 V Room Hot <0.01 Input Current with Input Voltage Low IINL VIN = 0 V Full -30 Room 240 400 600 Room 140 200 250 VS = -5 V, ID = 0 Room 21 VD = -5 V, IS = 0 Room 17 VD = VS = 0 V Room 17 Room >55 -2 -200 nA -10 -200 mA Digital Input 10 20 -250 10 20 A -250 Dynamic Characteristics Turn-On Time ton Turn-Off Time toff Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) Off Isolation OIRR See Switching Time Test Circuit f = 1 MHz f = 1 MHz, RL = 75 ns pF dB Power Supplies Positive Supply Current I+ Room 0.6 Negative Supply Current I- Room -2.7 Logic Supply Current IL Room 3 Reference Supply Current IR Room -1 VIN = 0 V V, or 5 V 1.5 -5 1.5 -5 4.5 -2 4.5 mA -2 Notes: a. Refer to PROCESS OPTION FLOWCHART . b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Siliconix S-52895--Rev. D, 16-Jun-97 3 DG180/181/182 Specificationsa for DG181 Test Conditions Unless Otherwise Specified Parameter Symbol V+ = 15 V V, V V- = -15 15 V, V VL = 5 V VR = 0 V, VIN = 2 V, 0.8 Vf Tempb Typc A Suffix B Suffix -55 to 125_C -25 to 85_C Mind Maxd Mind Maxd Unit -7.5 15 -7.5 15 V Analog Switch Analog Signal Rangee Drain-Source On-Resistance Source Off Leakage Current L k C VANALOG rDS(on) Full IS = -10 mA, VD = -7.5 V Room Full 18 30 60 50 75 VS = "10 V, VD = #10 V V+ = 10 V, V- = -20 V Room Hot 0.05 1 100 5 100 VS = "7.5 V, VD = #7.5 V Room Hot 0.07 1 100 5 100 VS = "10 V, VD = #10 V V+ = 10 V, V- = -20 V Room Hot 0.5 1 100 5 100 VS = "7.5 V, VD = #7.5 V Room Hot 0.6 1 100 5 100 IS(off) Drain Off Leakage Current L k C ID(off) Channel On Leakage Current ID(on) VD = VS = "7.5 V Room Hot -0.02 Input Current with Input Voltage High IINH VIN = 5 V Room Hot <0.01 Input Current with Input Voltage Low IINL VIN = 0 V Full -30 Room 85 150 180 Room 95 130 150 VS = -5 V, ID = 0 Room 9 VD = -5 V, IS = 0 Room 6 VD = VS = 0 V Room 14 Room >50 Room 0.6 Room -2.7 Room 3.1 Room -1 -2 -200 nA -10 -200 Digital Input 10 20 -250 10 20 A -250 Dynamic Characteristics Turn-On Time Turn-Off Time ton toff Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) Off Isolation OIRR See Switching Time Test Circuit f = 1 MHz f = 1 MHz, RL = 75 ns pF dB Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL Reference Supply Current IR VIN = 0 V, or 5 V 1.5 -5 1.5 -5 mA 4.5 -2 4.5 -2 Notes: a. Refer to PROCESS OPTION FLOWCHART . b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. 4 Siliconix S-52895--Rev. D, 16-Jun-97 DG180/181/182 Specificationsa for DG182 Test Conditions Unless Otherwise Specified Parameter A Suffix B Suffix -55 to 125_C -25 to 85_C V+ = 15 V, V- = -15 V, VL = 5 V VR = 0 V, VIN = 2 V, 0.8 Vf Tempb VANALOG Full rDS(on) IS = -10 mA, VD = -7.5 V Room Full 35 75 150 VS = "10 V, VD = #10 V V+ = 10 V, V- = -20 V Room Hot 0.05 1 100 5 100 VS = "10 V, VD = #10 V Room Hot 0.07 1 100 5 100 VS = "10 V, VD = #10 V V+ = 10 V, V- = -20 V Room Hot 0.4 1 100 5 100 VS = "10 V, VD = #10 V Room Hot 0.5 1 100 5 100 Symbol Typc Mind Maxd Mind -10 15 -10 Maxd Unit 15 V 100 150 Analog Switch Analog Signal Rangee Drain-Source On-Resistance Source Off Leakage Current L k C IS(off) Drain Off Leakage Current L k C ID(off) Channel On Leakage Current ID(on) VD = VS = "10 V Room Hot -0.02 Input Current with Input Voltage High IINH VIN = 5 V Room Hot <0.01 Input Current with Input Voltage Low IINL VIN = 0 V Full -30 Room 120 250 300 Room 100 130 150 VS = -5 V, ID = 0 Room 9 VD = -5 V, IS = 0 Room 6 VD = VS = 0 V Room 14 Room >50 Room 0.6 Room -2.7 Room 3.1 Room -1 -2 -200 nA -10 -200 Digital Input 10 20 -250 10 20 A -250 Dynamic Characteristics Turn-On Time ton Turn-Off Time toff Source-Off Capacitance CS(off) Drain-Off Capacitance CD(off) Channel-On Capacitance CD(on) Off Isolation OIRR See Switching Time Test Circuit f = 1 MHz f = 1 MHz, RL = 75 ns pF dB Power Supplies Positive Supply Current I+ Negative Supply Current I- Logic Supply Current IL Reference Supply Current IR VIN = 0 V V, or 5 V 1.5 -5 1.5 -5 4.5 -2 4.5 mA -2 Notes: a. Refer to PROCESS OPTION FLOWCHART . b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Siliconix S-52895--Rev. D, 16-Jun-97 5 DG180/181/182 Test Circuits Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform. +5 V tON: VS = 3 V tOFF: VS = -3 V +15 V VL Logic Input V+ D S 50% 0V VO IN RL 1 k VR tr <10 ns tf <10 ns 3V CL 100 pF 3V 90% V- 0V -15 V tON Switch Output CL (includes fixture and stray capacitance) RL V OUT + V S x R ) r L DS(on) tOFF 0V 90% -3 V Figure 2. Switching Time Application Hintsa Switch DG180 DG181 DG182 VR Reference Supply Voltage (V) VIN Logic Input Voltage VINH(min)/ VINL(max) (V) VS Analog Voltage Range (V) 5 GND 2.0/0.8 -7.5 to 15 -20 5 GND 2.0/0.8 -12.5 to 10 -12 5 GND 2.0/0.8 -4.5 to 12 GND 2.0/0.8 -10 to 15 GND 2.0/0.8 -15 to 10 GND 2.0/0.8 -7 to 12 V+ Positive Supply Voltage (V) V- Negative Supply Voltage (V) VL Logic Supply Voltage (V) 15b -15 10 12 15b -15 10 -20 12 -12 5 5 5 Notes: a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing. b. Electrical Parameter Chart based on V+ = 15 V, VL = 5 V, VR = GND 6 Siliconix S-52895--Rev. D, 16-Jun-97 DG180/181/182 Typical Characteristics Supply Current vs. Temperature IIN vs. VIN and Temperature 100 5 VINL = 0 VINH = 5 V 80 3 IL , I-, I+, I IIN (A) IL R (mA) 4 -I- 2 -IINL 60 40 -IR 1 20 I+ 0 -55 -35 -15 5 25 45 65 IINH 0 -55 -35 -15 85 105 125 5 Temperature (_C) 45 65 85 105 125 Temperature (_C) rDS(on) vs. Temperature Switching Time vs. VD and Temperature (DG180) 100 230 VD = 7.5 V DG182 210 tON VD = -7.5 V 190 DG181 t ON , t OFF (ns) rDS(on) ( ) 25 10 DG180 170 tOFF 150 130 VD= -7.5 V IS = -10 mA 110 1 -50 -25 0 25 50 75 100 90 -55 -35 125 -15 5 Temperature (_C) 25 45 65 85 105 125 Temperature (_C) Leakage vs. Temperature (DG180) Switching Time vs. VD and Temperature (DG181/182) 130 100 V+ = 10 V V- = -20 V VL = 5 V VR = 0 120 110 t ON , t OFF (ns) I S , I D (nA) 10 IS(off) 1 ID(off) tON 100 90 tOFF 80 60 0.1 45 VD = -7.5 V 70 ID(on) 25 VD = 7.5 V 65 85 Temperature (_C) Siliconix S-52895--Rev. D, 16-Jun-97 105 125 50 -55 -35 -15 5 25 45 65 85 105 125 Temperature (_C) 7 DG180/181/182 Typical Characteristics (Cont'd) ID(off) vs. Temperature (DG181/182) Capacitance vs. VD or VS (DG180) 30 100 f = 1 MHz V+ = 10 V, V- = -20 V VD = -10 V, VS = 10 V 26 C S, D (pF) I D (nA) 10 B Suffix 1 22 CS(off) 18 CD(on) A Suffix CD(off) 14 0.1 10 25 45 65 85 Temperature (_C) 105 125 -8 Off Isolation vs. Frequency Capacitance vs. VD or VS (DG181/182) 20 18 100 VINL = 0.8 V VINH = 2 V f = 1 MHz 90 80 CD(on) 14 70 12 60 10 ISO (dB) C S, D (pF) 16 CS(off) 8 CD(off) 6 0 -10 DG180 50 40 V+ = 15 V, V- = -15 V VR = 0, VL = 5 V RL = 75 VIN 220 mVRMS 20 Capacitance is measured from test terminal to common. 10 0 -8 -6 -4 -2 0 2 4 6 8 VD or VS - Drain or Source Voltage (V) 8 DG181/182 30 4 2 -4 0 4 8 VD or VS - Drain or Source Voltage (V) 10 105 106 107 108 f - Frequency (Hz) Siliconix S-52895--Rev. D, 16-Jun-97