S1S2
D1D2
NC NC
NC NC
IN1
V–
V+
IN2
VLVR
Dual-In-Line
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Refer to JAN38510 Information, Military Section
1
Top View
VR
S1
2
3
456
7
8
9
10
V–
IN2
D2
S2
D1
IN1
V+
VL
1
2
3
4
5
6
7
14
13
12
11
10
9
8
Top View
Flat
Package
S1S2
D1D2
NC NC
NC NC
IN1IN2
V+ V–*
VLVRMetal Can
DG180/181/182
Siliconix
S-52895—Rev. D, 16-Jun-97 1
High-Speed Drivers with Dual SPST JFET Switches
Features Benefits Applications
Constant On-Resistance Over
Entire Analog Range
Low Leakage
Low Crosstalk
Rad Hardness
Low Distortion
Eliminates Large Signal Errors
High Precision
High Bandwidth Capability
Fault Protection
Audio Switching
Video Switching
Sample/Hold
Guidance and Control Systems
Aerospace
Description
The DG180/181/182 are precision dual single-pole,
single-throw (SPST) analog switches designed to provide
accurate switching of video and audio signals. This series
is ideally suited for applications requiring a constant
on-resistance over the entire analog range.
The major difference in the devices is the on-resistance
(DG180—10 , DG181—30 , DG182—75 Reduced
errors are achieved through low leakage current (ID(on)
< 2 nA). Applications which benefit from the flat JFET
on-resistance include audio switching, video switching, and
data acquisition.
To achieve fast and accurate switch performance, each
device comprises four n-channel JFET transistors and a
TTL compatible bipolar driver. In the on state, each switch
conducts current equally well in either direction. In the off
condition, the switches will block up to 20 V peak-to-peak,
with feedthrough of less than –60 dB at 10 MHz.
Functional Block Diagram and Pin Configuration
*Common to Substrate and Case
Truth Table
Logic Switch
0 ON
1 OFF
Logic
“
0
”
0.8 V
Logic
0
0
.
8
V
Logic
“
1
”
20V
L
og
i
c
“1”
2
.
0
V
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70031.
DG180/181/182
2 Siliconix
S-52895—Rev. D, 16-Jun-97
Ordering Information
Temp Range Package Part Number
–
25to 85
_
C
10-Pin Metal Can DG181BA
–
25
t
o
85_C
14-Pin Sidebraze DG180BP
DG180AA/883, 5962-8767301IA
10-Pin Metal Can DG181AA/883, JM38510/11101BIA
DG182AA/883, JM38510/11102BIA
DG180AP/883, 5962-8767301CA
–55 to 125_C14-Pin Sidebraze DG181AP/883, JM38510/11101BCA
DG182AP/883, JM38510/11102BCA
5962-8767301XA
14-Pin Flat Pack JM38510/11101BXA
JM38510/11102BXA
Absolute Maximum Ratings
V+ to V– 36 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V+ to VD 33 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VD to V– 33 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VD to VD 22 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to V– 36 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to VIN 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VL to VR 8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VIN to VR8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VR to V– 27 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VR to VIN 2 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current (S or D) DG180 200 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Current (S or D) DG181, DG182 30 mA. . . . . . . . . . . . . . . . . . . . . . . . .
Current (All Other Pins) 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature –65 to 150_C. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipationa
10-Pin Metal Canb450 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14-Pin Sidebrazec825 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14-Pin Flat Packd900 mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Notes:
a. All leads welded or soldered to PC Board.
b. Derate 6 mW/_C above 75_C
c. Derate 11 mW/_C above 75_C
d. Derate 10 mW/_C above 75_C
Schematic Diagram (Typical Channel)
Figure 1.
VR
VLV+
S
IN
D
V–
DG180/181/182
Siliconix
S-52895—Rev. D, 16-Jun-97 3
Specificationsa for DG180
Test Conditions
Unless Otherwise Specified
V15VV 15VV5V
A Suffix
–55 to 125_CB Suffix
–25 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 2 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –7.5 15 –7.5 15 V
Drain-Source
On-Resistance rDS(on) IS = –10 mA, VD = –7.5 V Room
Full 7.5 10
20 15
25
Source Off
Lk C
IS(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.05 10
1000 15
300
Leakage Current
I
S(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.05 10
1000 15
300
Drain Off
Lk C
ID(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.04 10
1000 15
300 nA
Leakage Current
I
D(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.03 10
1000 15
300
Channel On
Leakage Current ID(on) VD = VS = "7.5 V Room
Hot –0.1 –2
–200 –10
–200
Saturation Drain Current IDSS 2 ms Pulse Duration Room 300 mA
Digital Input
Input Current with
Input Voltage High IINH VIN = 5 V Room
Hot <0.01 10
20 10
20
A
Input Current with
Input Voltage Low IINL VIN = 0 V Full –30 –250 –250
A
Dynamic Characteristics
Turn-On T ime ton
See Switching Time Test Circuit
Room 240 400 600
ns
Turn-Off Time toff
See
Switching
Time
Test
Circuit
Room 140 200 250
ns
Source-Off Capacitance CS(off) VS = –5 V, ID = 0 Room 21
Drain-Off Capacitance CD(off) f = 1 MHz VD = –5 V, IS = 0 Room 17 pF
Channel-On
Capacitance CD(on)
f
=
1
MHz
VD = VS = 0 V Room 17
Off Isolation OIRR f = 1 MHz, RL = 75 Room >55 dB
Power Supplies
Positive Supply Current I+ Room 0.6 1.5 1.5
Negative Supply Current I–
VIN =0Vor5V
Room –2.7 –5 –5
mA
Logic Supply Current IL
V
IN =
0
V
, or
5
V
Room 3 4.5 4.5 m
A
Reference Supply Current IRRoom –1 –2 –2
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG180/181/182
4 Siliconix
S-52895—Rev. D, 16-Jun-97
Specificationsa for DG181
Test Conditions
Unless Otherwise Specified
V+ 15 V V 15 V V 5 V
A Suffix
–55 to 125_CB Suffix
–25 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 2 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –7.5 15 –7.5 15 V
Drain-Source
On-Resistance rDS(on) IS = –10 mA, VD = –7.5 V Room
Full 18 30
60 50
75
Source Off
Lk C
IS(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.05 1
100 5
100
Leakage Current
I
S(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.07 1
100 5
100
Drain Off
Lk C
ID(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.5 1
100 5
100 nA
Leakage Current
I
D(off) VS = "7.5 V, VD = #7.5 V Room
Hot 0.6 1
100 5
100
Channel On
Leakage Current ID(on) VD = VS = "7.5 V Room
Hot –0.02 –2
–200 –10
–200
Digital Input
Input Current with
Input Voltage High IINH VIN = 5 V Room
Hot <0.01 10
20 10
20
A
Input Current with
Input Voltage Low IINL VIN = 0 V Full –30 –250 –250
A
Dynamic Characteristics
Turn-On T ime ton
See Switching Time Test Circuit
Room 85 150 180
ns
Turn-Off Time toff
S
ee
S
w
it
c
hi
ng
Ti
me
T
es
t
Ci
rcu
it
Room 95 130 150 ns
Source-Off Capacitance CS(off) VS = –5 V, ID = 0 Room 9
Drain-Off Capacitance CD(off) f = 1 MHz VD = –5 V, IS = 0 Room 6 pF
Channel-On Capacitance CD(on) VD = VS = 0 V Room 14
Off Isolation OIRR f = 1 MHz, RL = 75 Room >50 dB
Power Supplies
Positive Supply Current I+ Room 0.6 1.5 1.5
Negative Supply Current I–
VIN
=
0 V, or 5 V
Room –2.7 –5 –5
mA
Logic Supply Current IL
V
IN =
0
V
,
or
5
V
Room 3.1 4.5 4.5
mA
Reference Supply Current IRRoom –1 –2 –2
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG180/181/182
Siliconix
S-52895—Rev. D, 16-Jun-97 5
Specificationsa for DG182
Test Conditions
Unless Otherwise Specified A Suffix
–55 to 125_CB Suffix
–25 to 85_C
Parameter Symbol V+ = 15 V, V– = –15 V, VL = 5 V
VR = 0 V, VIN = 2 V, 0.8 VfTempbTypcMindMaxdMindMaxdUnit
Analog Switch
Analog Signal RangeeVANALOG Full –10 15 –10 15 V
Drain-Source
On-Resistance rDS(on) IS = –10 mA, VD = –7.5 V Room
Full 35 75
150 100
150
Source Off
Lk C
IS(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.05 1
100 5
100
Leakage Current
I
S(off) VS = "10 V, VD = #10 V Room
Hot 0.07 1
100 5
100
Drain Off
Lk C
ID(off)
VS = "10 V, VD = #10 V
V+ = 10 V, V– = –20 V Room
Hot 0.4 1
100 5
100 nA
Leakage Current
I
D(off) VS = "10 V, VD = #10 V Room
Hot 0.5 1
100 5
100
Channel On
Leakage Current ID(on) VD = VS = "10 V Room
Hot –0.02 –2
–200 –10
–200
Digital Input
Input Current with
Input Voltage High IINH VIN = 5 V Room
Hot <0.01 10
20 10
20
A
Input Current with
Input Voltage Low IINL VIN = 0 V Full –30 –250 –250
A
Dynamic Characteristics
Turn-On T ime ton
See Switching Time Test Circuit
Room 120 250 300
ns
Turn-Off Time toff
S
ee
S
w
it
c
hi
ng
Ti
me
T
es
t
Ci
rcu
it
Room 100 130 150 ns
Source-Off Capacitance CS(off) VS = –5 V, ID = 0 Room 9
Drain-Off Capacitance CD(off) f = 1 MHz VD = –5 V, IS = 0 Room 6 pF
Channel-On Capacitance CD(on) VD = VS = 0 V Room 14
Off Isolation OIRR f = 1 MHz, RL = 75 Room >50 dB
Power Supplies
Positive Supply Current I+ Room 0.6 1.5 1.5
Negative Supply Current I–
VIN =0Vor5V
Room –2.7 –5 –5
mA
Logic Supply Current IL
V
IN =
0
V
, or
5
V
Room 3.1 4.5 4.5 m
A
Reference Supply Current IRRoom –1 –2 –2
Notes:
a. Refer to PROCESS OPTION FLOWCHART .
b. Room = 25_C, Full = as determined by the operating temperature suffix.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
e. Guaranteed by design, not subject to production test.
f. VIN = input voltage to perform proper function.
DG180/181/182
6 Siliconix
S-52895—Rev. D, 16-Jun-97
Test Circuits
D
VLV+
V–
CL (includes fixture and stray capacitance)
VO
S
IN
–15 V
RL
1 k
CL
100 pF
+15 V+5 V
VR
tON: VS = 3 V
tOFF:V
S
= –3 V
Feedthrough due to charge injection may result in spikes at the leading and trailing edge of the output waveform.
Logic
Input
Switch
Output
tOFF
tON
tr <10 ns
tf <10 ns
90%
50%
0 V
3 V
0 V
0 V
90%
Figure 2. Switching Time
3 V
–3 V
VOUT +VSxRL
RL)rDS(on)
Application Hintsa
Switch
V+
Positive Supply
Voltage
(V)
V–
Negative
Supply
Voltage
(V)
VL
Logic Supply
Voltage
(V)
VR
Reference
Supply Voltage
(V)
VIN
Logic Input
Voltage
VINH(min)/
VINL(max)
(V)
VS
Analog Voltage
Range
(V)
DG180
DG181
15b
10
12
–15
–20
–12
5
5
5
GND
GND
GND
2.0/0.8
2.0/0.8
2.0/0.8
–7.5 to 15
–12.5 to 10
–4.5 to 12
DG182
15b
10
12
–15
–20
–12
5
5
5
GND
GND
GND
2.0/0.8
2.0/0.8
2.0/0.8
–10 to 15
–15 to 10
–7 to 12
Notes:
a. Application Hints are for DESIGN AID ONLY, not guaranteed and not subject to production testing.
b. Electrical Parameter Chart based on V+ = 15 V, VL = 5 V, VR = GND
DG180/181/182
Siliconix
S-52895—Rev. D, 16-Jun-97 7
Typical Characteristics
, I–, I+, I
IIN vs. VIN and TemperatureSupply Current vs. Temperature
Temperature (_C) Temperature (_C)
A)
(mA)ILR
I
IN (
5
4
3
2
1
0–55 –35 –15 5 25 45 65 85 105 125 0
100
80
60
40
20
–55 –35 –15 5 25 45 65 85 105 125
IL
I+
–IR
–I–
–IINL
IINH
VINL = 0
VINH = 5 V
Switching Time vs. VD and Temperature (DG180)rDS(on) vs. Temperature
Leakage vs. Temperature (DG180) Switching Time vs. VD and Temperature (DG181/182)
(ns)tON,t
OFF
(nA)I , I
SD
Temperature (_C)
rDS(on) ()
(ns)tON,t
OFF
Temperature (_C)
Temperature (_C) Temperature (_C)
100
1–50 –25 0 25 50 75 100 125
10
230
90
–55 –35 –15 5 25 45 65 85 105 125
210
190
170
150
130
110
VD= –7.5 V
IS = –10 mA
tOFF
tON
DG180
DG181
DG182
100
0.1 25 45 65 85 105 125
10
1
ID(on) ID(off)
IS(off)
V+ = 10 V
V– = –20 V
VL = 5 V
VR = 0
130
50
–55 –35 –15 5 25 45 65 85 105 125
120
110
100
90
80
70
60
tOFF
tON
VD = –7.5 V
VD = 7.5 V
VD = –7.5 V
VD = 7.5 V
DG180/181/182
8 Siliconix
S-52895—Rev. D, 16-Jun-97
Typical Characteristics (Cont’d)
ID(off) vs. Temperature (DG181/182)
(nA)
ID
Temperature (_C)
100
10
1
0.1 25 45 65 85 105 125
B Suffix
A Suffix
V+ = 10 V, V– = –20 V
VD = –10 V, VS = 10 V
Capacitance vs. VD or VS (DG180)
VD or VS – Drain or Source Voltage (V)
(pF)CS, D
30
26
22
18
14
10 –8 –4 0 4 8
CD(off)
CS(off)
CD(on)
f = 1 MHz
Off Isolation vs. Frequency
Capacitance vs. VD or VS (DG181/182)
VD or VS – Drain or Source Voltage (V) f – Frequency (Hz)
ISO (dB)
(pF)CS, D
100
90
80
70
60
50
40
30
20
10
0105106107108
V+ = 15 V, V– = –15 V
VR = 0, VL = 5 V
RL = 75
VIN 220 mVRMS
DG180
DG181/182
20
18
16
14
12
10
8
6
4
2
0–10 –8 –6 –4 –2 0 2 4 6 8 10
CD(off)
CS(off)
CD(on)
Capacitance is measured from test terminal
to common.
VINL = 0.8 V
VINH = 2 V
f = 1 MHz
