Photodetector
XPDV
Ultrafast 1.55 µm
Photodetector XPDV
Ultrafast 1.55 µm
Photodetector XPDV
www.u2t.de
Features:
Highest bandwidth with flat response
Excellent pulse behaviour
Unsurpassed high-power handling capability
High responsivity
Unique on-chip integrated bias network
Well matched to 50 Ω
Applications:
9Communication systems at 40 Gbit/s (OC-768) and beyond
9Microwave photonics up to 60 GHz
9High-speed lightwave characterization
Datasheet
Product Description
50
1480
0.55
>50
9
0.7
0.5
5
28
-13
10
1620
0.8
50
20
24
-8
XPDV 2020R
Product Selection Guide
notes 1) λ= 1550 nm,Vbias = 2 V, T = 25 oC
2) measured using a pulse source (1 ps pulse width) and a Tektronix CSA 8000 oscilloscope with an 80E01 sampling head
3) change in pulse width is less than 10 %
3 dB bandwidth (GHz)
Pulse width (ps)
Wavelength range (nm)
DC responsivity (A/W)
Polarization dependent loss (dB)
Dark current (nA)
Optical input power (mW mean)
Optical return loss (dB)
S22 (0.05 - 50 GHz) (dB)
min. typ. max.
XPDV 2020
min. typ. max.
XPDV 2040R XPDV 1020R
min. min. notestyp. typ.max. max.
40
1480
0.55
45
10
0.7
0.5
5
28
12
1620
0.8
50
20
24
40
1480
0.6
45
10
0.7
0.6
5
-12
12
1620
1.0
50
20
28
-8
1480
0.4
1)
1)
1)
1)
1)
1), 2), 3)
1)
1)
50
9
0.5
0.7
5
28
-13
>50
10
1620
1.1
50
20
24
-8
Key element of the u2tXPDV photodetector modules are our well-established
waveguide-integrated photodiodes. They are designed to exhibit an optimized
frequency response in both, power and phase. Due to our sophisticated rf-packaging,
the pulse response reveals almost no ringing. The measured pulse width is limited by
todays fastest available sampling scopes. Our integrated on-chip spot size
converter leads to a high responsivity and ensures reliability and robustness of the XPDV.
A further advantage of the waveguide structure is the unsurpassed high power
behaviour. A linear response up to an optical input power of 13 dBm is a unique
feature of the XPDV photodetector modules. For short pulses an output voltage
swing of more than 1 Vpp can be achieved, without any degradation of the pulse
response.
All u2t’s XPDV contain our unique on-chip integrated bias network. It ensures an
undisturbed frequency response from DC to the 3 dB cut-off frequency and saves
costs for external bias-tees.
This brief description of the available XPDV photodetector devices should help you
to identify which device suits your application best. If you need more information,
please send an email to sales@u2t.de.
XPDV 2020R
The XPDV 2020R is the ultimate photodetector in terms of speed, responsivity and
low polarization dependent loss (PDL). The 3 dB electrical bandwidth exceeds
50 GHz, typical values are 60 GHz and beyond. The integrated 50 Ωtermination
permits the matching to your system with minimum ripple in the frequency domain.
XPDV 2020
The XPDV 2020 is a device without internal termination. The typical applications are
systems or measurements, where the rf-responsivity is more important (6 dB more
output power) than a flat frequency response.
XPDV 2040R
This internally terminated photodetector is the obvious choice for applications
which do not require the ultimate bandwidth of an XPDV 2020R. It has a very
defined RC-limited cut-off frequency of typically 45 GHz and a guaranteed
responsivity of more than 0.6 A/W .
XPDV 1020R
The XPDV 1020R is the economy version of the XPDV 2020R with the same
ultimate frequency response, but some relaxed specifications in terms of
responsivity and PDL.
Response (V)
0.20
0.15
0.10
0.05
0.00
050 100 150 200
Typical uncalibrated pulse
response of an XPDV 2020R
2)
Time (ps)
Response (dB)
0
-3
-6
-9
010 20 30 40 50
Typical calibrated frequency
response of an XPDV 2020R
1)
Frequency (GHz)
Measurement set-up:
1) Agilent lightwave component analyzer
2) Pulse source (1 ps pulse width) and a
Tektronix CSA 8000 oscilloscope
with an 80E01 sampling head
Photodetector
XPDV
Specifications
Absolute Maximum Ratings Mechanical Dimensions
Ordering Information
Please use the following table to select your required configuration of the photodetector.
Pin-out
www.u2t.de
rf out
Vbias gnd
optical
connector
* )
* ) optional 50 Ωmatching resistor
XPDV xxxxR yy zz
--
specifies optical connector
FP =FC/PC FA =FC/APC
SP = SC/PC SA = SC/APC
other connectors available upon request
specifies rf connector
VF = female V-connector (standard)
VM= male V-connector
product specification (see product selection guide)
available types: 2020R, 2020, 2040R, 1020R
the R specifies internal 50 Ω termination
All dimensions in mm.
Please contact our sales department at
++49 30 726 113 530 or sales@u2t.de
Example: XPDV 2020R - VF - FP
Reverse bias voltage (V)
Forward current (mA)
Maximum optical power (mW mean)
Maximum peak-peak voltage (V)
Operation temperature (°C)
Storage temperature (°C)
Humidity
3
5
50
1.5
-20 ... +85
-20 ... +85
0-90 % non condensing
Photodetector Power Supply PPS
All photodetectors are delivered with an easy-to-use battery powered
bias-supply. For optimum performance, in particular at high optical
input levels, we recommend the use of our separetely available PPS
power supply.
58.8
22.0
2.0
6.7
3.5
17.0
11.0
4.6
4.5
For More Information
u2t Photonics AG phone: ++49 30 726 113 500
Reuchlinstrasse 10-11 fax: ++49 30 726 113 800
10553 Berlin e-mail: contact@u2t.de
GERMANY http:// www.u2t.de
Applications
40 Gbit/s long haul systems require photodetectors with a clean response in power as well as in phase. u2t’s waveguide-fed
photodiodes are intrinsically fast devices and do not require any rf-enhancement in the package e.g. by inductive peaking. Hence,
there is absolutely no trade-off between frequency and time domain performance. This fact, together with the high responsivity
makes them best suited for 40 Gbit/s systems and all other high-performance, high-frequency systems.
The performance of optically amplified systems is optimized by photodetectors, that can handle extremely high optical powers. Due
to the distributed absorption process, u2t’s photodetectors smoothly manage peak output voltages up to 1 V and an optical input
power of +13 dBm and are therefore capable of directly driving digital decision circuits.
Response (dB)
Response (V)
0
-3
-6
-9
1.0
0.6
0.2
0.8
0.4
0.0
010 20 30 40 50
050 100 150 200
Frequency (GHz)
Time (ps)
10 mV/div
10 ps/div
Time (ps)
0510
Mean optical power (dBm)
15
input
power
0.3
0.2
0.1
0.0
050 100 150 200
Response (V)
10
1
0.1
0.01
DC photo current (mA)
RF output power (dBm)
-10 -5
100
0
-20
-40
20
10 ps/div
62.5 mV/div
The excellent performance of u2tphotodetectors was proven in a variety of our customers systems. This includes 40 Gbit/s
RZ- and NRZ-systems with and without FEC as well as reference set-ups. Our devices excel even in some experimental systems
at 80 Gbit/s.
FWHM < 10 ps
λ= 1.55 µm
R = 0.7 A/W
λ=1.55µm
frf = 50 GHz
FWHM
typ. 9 ps
bandwidth
> 50 GHz
Copyright ©2002 u2t Photonics AG. All rights reserved. u2t reserves the right to make changes without notice.
Any Trademarks used in this document are properties of their respective owners.
DB.XPDV20xxx.30.0202
Optimized Response: Frequency and Time Domain
High-Power Behaviour: Pulse Response and Power Linearity
System Performance: RZ and NRZ Eye Diagram
STUDIOPROKOPY, Berlin
measured by SHF Communication Technologies AG, Germany
40 Gbit/s RZ 40 Gbit/s NRZ
