Mar
.
201
3. V
ersion 2.0
MagnaC
hip Semiconducto
r Ltd
.
1
MP
K
C2
SA/
CA
20
0U40
40
0V FRD Module
A
bsolute Maximum Ra
tings
@Tc = 25
o
C (Per Le
g)
Characterist
ics
Conditions
Symbol
Rating
Unit
Repetitive Peak
Reverse Voltag
e
V
RRM
4
00
V
Reverse DC Vol
tage
V
R(DC)
3
20
V
Average Forw
ard
Current
T
C
=25
o
C
Resistive Load
I
F(AV)
400
A
T
C
=
10
0
o
C
200
A
Surge(non-r
epetitive) Forw
ard
Current
One Half Cy
cle at 60Hz,
Peak Value
I
FSM
3300
A
I
2
t for Fusing
Value for One Cy
cle Curren
t,
t
w
= 8.3ms, T
j
= 25
℃
Start
I
2
t
45.0* 10
3
A
2
s
Junction
T
e
mperature
T
J
-40 ~ 150
℃
Maximum Pow
er Dissipation
P
D
690
W
Isolation
Voltage
@AC 1 minutes
V
isol
2500
V
Storage Temper
ature
T
stg
-40 ~ 1
25
℃
Mounting Torqu
e
-
4.0
N.m
Terminal Torque
Typical Including
Screws
-
3.0
N.m
Weight
-
180
g
Product
Name
MPKC2SA200U40
MPKC2CA200U40
Optional
Information
Side Comm
on
Center Comm
on
MP
K
C2
S
A
/C
A
20
0U40
40
0V FRD Module
General Description
Ultra-FRD module devices ar
e optimized to r
educe losses
and EMI/RFI in high frequency p
ower conditioning electr
ical
systems.
These diode modules ar
e ideally suited for po
wer converters,
motors drives and othe
r applications wher
e switching losses
are significant portion of th
e total losses.
5
DM
-2
Features
Rep
etitive Reverse V
oltage : V
RRM
= 400V
L
ow Forward V
oltage
: V
F
(typ.)
=
1.0V
Average Forward Current : I
F
(
Av
.)=200A
@T
C
=100
℃
Ult
ra-Fast Reverse Recovery
T
im
e : t
rr
(typ.) = 4
0ns
E
xtensive Characterization of Recovery Parameters
Red
uced EMI and RFI
Is
olation T
ype Package
A
pplications
Hig
h Speed & High Power converters, Welders
V
ariou
s Switching and T
elecommunication Power Supply
E
301932
Ordering Information
Mar
.
201
3. V
ersion 2.0
MagnaC
hip Semiconducto
r Ltd
.
2
MP
K
C2
SA/
CA
20
0U40
40
0V FRD Module
Electrical Characteristics
@Tc = 25
o
C
(unle
ss otherwise
specified)
Characterist
ics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Cathode Anode
Breakdow
n Voltage
I
R
=100uA
V
R
400
-
-
V
Diode Max
imum Forwar
d Voltage
I
F
=
200A
T
C
=25
℃
V
FM
-
1.0
1.
3
V
T
C
=100
℃
-
0.9
-
Diode Peak Rev
erse Recovery Cu
rrent
T
c
=100
℃
,
V
RRM
applied
T
C
=100
℃
I
RRM
-
-
1.0
mA
Diode Reve
rse Recovery Ti
me
I
F
=1
A,
V
R
=30V
di/dt = -400A/uS
T
C
=
25
℃
t
rr
-
40
50
ns
Diode Reve
rse Recovery Ti
me
I
F
=
20
0
A,
V
R
=200V
di/dt = -400A/uS
T
C
=25
℃
t
rr
-
100
-
ns
T
C
=100
℃
-
130
-
Thermal Characteristics
Characterist
ics
Conditions
Symbol
Min.
Typ.
Max.
Unit
Thermal Resistan
ce(Isolation Typ
e)
Junction to
Case
R
th(j-c)
-
-
0.18
℃
/W
Mar
.
201
3. V
ersion 2.0
MagnaC
hip Semiconducto
r Ltd
.
3
MP
K
C2
SA/
CA
20
0U40
40
0V FRD Module
Fig.1 T
ypical Forward V
oltage Drop
vs. Instantaneous Forw
ard Current
Fig.2 T
ypical Reverse Rec
overy Time
V
s.
–
di/dt
Fig.3 T
ransient T
hermal I
mpedance(Zthjc)
Characteristics
Fig.4 Forward Cur
rent Derating Curve
0.0
0.5
1.0
1.5
0
50
100
150
200
250
300
Forward Current,I
F
[A]
T
C
=25
℃
T
C
=125
℃
Forward Voltage
Drop,V
F
[V]
0
20
40
60
80
100
120
140
160
0
50
100
150
200
250
300
350
400
450
500
DC
Average Forwar
d Current,I
F(AVG)
[A]
Case Temperatute, Tc[
℃
]
200
400
600
800
1000
0
25
50
75
100
125
150
Reverse R
ecovery Tim
e[ns]
di/dt[A/us]
1E-5
1E-4
1E-3
0.01
0.1
1
10
1E-4
1E-3
0.01
0.1
1
T
C
=25
℃
Thermal Response Zthjc[
℃
/W]
Rectangular Pulse Duration
Time[sec]
Mar
.
201
3. V
ersion 2.0
MagnaC
hip Semiconducto
r Ltd
.
4
MP
K
C2
SA/
CA
20
0U40
40
0V FRD Module
Package Dimension
5
DM
-2
Dimensions are in mil
limeters, un
less otherwise s
pecified
Mar
.
201
3. V
ersion 2.0
MagnaC
hip Semiconducto
r Ltd
.
5
MP
K
C2
SA/
CA
20
0U40
40
0V FRD Module
DISCLAIMER:
The
Products
are
not
designed
for
use
in
hostile
environments,
i
ncluding,
without
limitation,
aircraft,
n
uclear
power
generation,
medical
appliances,
and
devices
or
systems
in
which
mal
function
of
any
Product
can
reasonably
be
expected
to
result
in
a
personal
injury.
Seller’s
customers
using
or
selling
Seller’s
products
for
use
in
such
applications do so at their own risk and agree to fully defend and indemnify
Seller.
MagnaC
hip reserves
the
right
to change
the
specifications and circuitry
without notice
at
any time.
Magna
Chip does
not
consider responsibility
for
use
of
any
circuitry
other
than
circuitry
entirely
included
in
a
Magna
Chip
product.
is
a
registered
trademark
of
MagnaChip
Semiconductor
Ltd.
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