10 sec
Steady-State
V
DS
V
GS
4.2 3.5
3.3 2.8
I
DM
1.4 1.0
0.9 0.64
T
J
, T
STG
Symbol
Typ
Max
t ≤ 10s
70 90
Steady-State
100 125
Steady-State
R
θJL
63 80
Junction and Storage Temperature Range
R
θJA
Parameter
-55 to 150
Maximum Junction-to-Lead
C
°C/W
Thermal Characteristics Units
Maximum Junction-to-Ambient
A
°C/W
°C/W
Maximum Junction-to-Ambient
A
Drain-Source Voltage
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
V
Pulsed Drain Current
B
Units
Maximum
30
±20
30
V
°C
T
A
=70°C
I
D
Continuous Drain
Current
A,F
T
A
=25°C
T
A
=70°C
Parameter Symbol
Gate-Source Voltage
Power Dissipation T
A
=25°C
A
P
D
W
AO3434
30V N-Channel MOSFET
Product Summary
V
DS
(V) = 30V
I
D
= 4.2A (V
GS
= 10V)
R
DS(ON)
< 52mΩ (V
GS
= 10V)
R
DS(ON)
< 75mΩ (V
GS
= 4.5V)
ESD protected
General Description
The AO3434 uses advanced trench technology to
provide excellent R
DS(ON)
and low gate charge.
This device is suitable for use as a load switch or
in PWM applications. It is ESD protected.
G
D
S
SOT23
Top View Bottom View
D
G
S
G
S
D
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3434
Symbol Min Typ Max Units
BV
DSS
30 V
1
T
J
=55°C 5
I
GSS
10 uA
V
GS(th)
1 1.32 1.8 V
I
D(ON)
30 A
43 52
T
J
=125°C 58 74
59 75 mΩ
g
FS
8.5 S
V
SD
0.77 1 V
I
S
1.8 A
C
iss
269 340 pF
C
oss
65 pF
C
rss
41 pF
R
g
1 1.5 Ω
Q
g
(10V) 5.7 7.2 nC
Q
g
(4.5V) 3 nC
Q
gs
1.37 nC
Q
gd
0.65 nC
t
D(on)
2.6 3.8 ns
t
r
5.5 8 ns
t
D(off)
15.2 23 ns
t
f
3.7 5.5 ns
t
rr
15.5 21 ns
Q
rr
7.1 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge I
F
=4.2A, dI/dt=100A/µs
Drain-Source Breakdown Voltage
On state drain current
I
D
=250µA, V
GS
=0V
V
GS
=10V, V
DS
=5V
V
GS
=10V, I
D
=4.2A
Reverse Transfer Capacitance
I
F
=4.2A, dI/dt=100A/µs
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
I
DSS
µA
Gate Threshold Voltage V
DS
=V
GS
I
D
=250µA
V
DS
=30V, V
GS
=0V
V
DS
=0V, V
GS
= ±16V
Zero Gate Voltage Drain Current
Gate-Body leakage current
R
DS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
mΩ
V
GS
=4.5V, I
D
=2A
I
S
=1A,V
GS
=0V
V
DS
=5V, I
D
=4.2A
Total Gate Charge
Gate Source Charge
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Turn-On Rise Time
Turn-Off DelayTime V
GS
=10V, V
DS
=15V, R
L
=3.6Ω,
R
GEN
=3Ω
Turn-Off Fall Time
Maximum Body-Diode Continuous Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
V
GS
=10V, V
DS
=15V, I
D
=4.2A
Total Gate Charge
Gate Drain Charge
V
GS
=0V, V
DS
=15V, f=1MHz
SWITCHING PARAMETERS
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambi ent.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F.The current rating is based on the t≤10s thermal resistance rating.
Rev3:Nov. 2010
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
5
10
15
20
25
30
012345
V
DS
(Volts)
Fig 1: On-Region Characteristics
I
D
(A)
V
GS
=3V
4.5V
6V
10V 8V
4V
0
3
6
9
12
15
0123456
V
GS
(Volts)
Figure 2: Transfer Characteristics
I
D
(A)
30
40
50
60
70
80
0 5 10 15 20
I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
(Volts)
Figure 6: Body-Diode Characteristics
I
S
(A)
25°C
125°C
0.8
1
1.2
1.4
1.6
1.8
0 25 50 75 100 125 150 175
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
Normalized On-Resistance
V
GS
=10V
Id=4.2A
V
GS
=4.5V
Id=3.5A
30
42
54
66
78
90
102
2 4 6 8 10
V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
R
DS(ON)
(mΩ
Ω
Ω
Ω)
25°C
125°C
V
DS
=5V
V
GS
=4.5V
V
GS
=10V
I
D
=4.2A
25°C
125°C
3.5V
Alpha & Omega Semiconductor, Ltd. www.aosmd.com
AO3434
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
0
2
4
6
8
10
0123456
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
V
GS
(Volts)
0
100
200
300
400
500
0 5 10 15 20 25 30
V
DS
(Volts)
Figure 8: Capacitance Characteristics
Capacitance (pF)
C
iss
0
5
10
15
20
25
30
0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
Power (W)
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Z
θ
θ
θ
θJA
Normalized Transient
Thermal Resistance
C
oss
C
rss
V
DS
=15V
I
D
=4.2A
Single Pulse
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°C/W
T
on
T
P
D
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
T
J(Max)
=150°C
T
A
=25°C
0.0
0.1
1.0
10.0
100.0
0.01 0.1 1 10 100
V
DS
(Volts)
I
D
(Amps)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
µ
s
10ms
1m
0.1s
DC
R
DS(ON)
limited
T
J(Max)
=150°C
T
A
=25°C
100
µ
10s
Alpha & Omega Semiconductor, Ltd. www.aosmd.com