HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000. 09.28
Page No. : 1/3
HSMC Product Specifi cation
H2N6520
PNP EPITAXIAL PLANAR TRAN SISTOR
Description
The H2N6520 is designed for general purpose applications requiring high
breakdown voltages.
Features
• High Collector-Emitt er Breakdown Voltage
• Low Collector-Emitter Saturat ion Voltage
• The H2N6520 is complementary to H2N6517
Absolute Maximum Ratings
• Maximum Temperatures
Storage Tempera ture ....................................................................................................... -55 ~ +150 °C
Juncti o n Temp e rature ............................................................................................... +150 °C Maximum
• Ma ximum Power Dissipation
Total Power Dissipat ion (Ta=25°C)............................................................................................ 625 mW
• Maximum Vo lt ages and Currents (Ta=25 °C)
VCBO Collector to Base Voltage.................................................................................................. -350 V
VCEO Collector to Emitter Voltage............................................................................................... -350 V
VEBO Emitter to Base Voltage......................................................................................................... -5 V
IC Collector Current ................................................................................................................. -500 mA
IB Base Current ....................................................................................................................... -250 mA
Characteristics (Ta=25°C, *Pulse Test : Pulse Width ≤380us, Duty Cycle≤2% )
Symbol Min. Typ. Max. Unit Test Conditions
BVCBO -350 - - V IC=-100uA, IE=0
BVCEO -350 - - V IC=-1mA, IB=0
BVEBO -5 - - V IE=-10uA, IC=0
ICBO - - -50 nA VCB=-250V, IE=0
IEBO - - -50 nA VEB=-4V, IC=0
*VCE(sat)1 - - -0.30 V IC=-10mA, IB=-1mA
*VCE(sat)2 - - -0.35 V IC=-20mA, IB=-2mA
*VCE(sat)3 - - -0.50 V IC=-30mA, IB=-3mA
*VCE(sat)4 - - -1 V IC=-50mA, IB=-5mA
VBE(on) - - 2 V IC=-100mA, VCE=- 10V
*VBE(sat)1 - - -0. 75 V IC=- 10mA, I B=- 1mA
*VBE(sat)2 - - -0. 85 V IC=- 20mA, I B=- 2mA
*VBE(sat)3 - - -0. 90 V IC=- 30mA, I B=- 3mA
*hFE1 20 - - VCE=-10V, IC=-1mA
*hFE2 30 - - VCE=-10V, IC=-10mA
*hFE3 30 - 200 VCE=-10V, IC=-30mA
*hFE4 20 - 200 VCE=-10V, IC=-50mA
*hFE5 15 - - VCE=-10V, IC=-100mA
fT 40 - 200 MHz IC=-10mA, VCE=-20V, f=20MHz
Cob - - 6 pF VCB=-20V, f=1MHz, IE=0
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000. 09.28
Page No. : 2/3
HSMC Product Specifi cation
Characteristics Curve
Current Gain & Collector Current
1
10
100
0.01 0.1 1 10 100 1000
Collector Curren t (mA)
hFE
VCE=10V
Sat uration Volt age & Coll ector C urrent
1
10
100
1000
10000
100000
0.001 0.01 0.1 1 10 100 1000
Collector Curren t (mA)
Satu ration Voltage (mV)
VBE(sat) @ IC=10IB
VCE(sat) @ IC=10IB
On Voltage & Collector CurrentT
100
1000
10000
0.01 0.1 1 10 100 1000
Collector Curren t (mA)
On Voltage (mV)
VBE(ON) @ V CE=10V
Cut off Fr equency & Col lector Curren t
10
100
1 10 100
Collector Curren t (mA)
Cutoff Frequency
VCE=20V
Capacitance & Rever se-Bia sed Volt age
1
10
100
0.1 1 10 100
R everse- Biased Vol t a ge (V)
Capacitan ce (pF)
Cob
PD-Ta
0
100
200
300
400
500
600
700
0 20 40 60 80 100 120 140 160
Ambient Tem p er at ure-Ta (oC)
Power Dissipation -PD(mW)
HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HE6274-B
Issued Date : 1994.11.18
Revised Date : 2000. 09.28
Page No. : 3/3
HSMC Product Specifi cation
TO-92 Dimension
*:Typical
Inches Millimeters Inches Millimeters
DIM Min. Max. Min. Max. DIM Min. Max. Min. Max.
A 0.1704 0.1902 4.33 4.83 G 0.0142 0.0220 0.36 0.56
B 0.1704 0.1902 4.33 4.83 H - *0.1000 - *2.54
C 0.5000 - 12.70 - I - *0.0500 - *1.27
D 0.0142 0.0220 0.36 0.56 α1-*5°-*5°
E - *0.0500 - *1.27 α2-*2°-*2°
F 0.1323 0.1480 3.36 3.76 α3-*2°-*2°
Notes : 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controll i ng dimens ion : millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing m ethod, please contact your l ocal HSMC sal es office.
Material :
• Lead : 42 Alloy ; solder plating
• Mold Compound : Epoxy resin famil y, flammabilit y sol i d burning class:UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its produc ts without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liabilit y for any cons equence of customer product design, infringem ent of patents, or application assistance.
Head Office And Factory :
• Head Office (Hi-Sincerit y Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454
• Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu I ndust ri al Park Hsin-Chu Taiwan. R. O.C
Tel : 886-3-5983621~5 Fax : 886-3-5982931
• Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Indust ri al Park Hs i n-Chu Taiwan. R.O.C
Tel : 886-3-5977061 Fax : 886-3-5979220
31
A
D
B
C
Iα1
E
F
α2
α3
G
H
2
Style : Pin 1.Em itter 2.Bas e 3.C ol lec tor
3-Lead TO-92 Plastic Package
HSMC Packa
g
e Code : A
Marking :
HSMC Logo
Part Number
Date Code
Product Series
Rank
Laser Mark
HSMC Logo
Part Number
Product Series
Ink Mark
