Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET
▼ Low on-resistance BVDSS 20V
▼ Capable of 2.5V gate drive RDS(ON) 20mΩ
▼ RoHS Compliant ID6.8A
Description
Absolute Maximum Ratings
Symbol Units
VDS V
VGS V
ID@TA=25℃A
ID@TA=70℃A
IDM A
PD@TA=25℃W
TSTG ℃
TJ℃
Symbol Value Unit
Rthj-a Maximum Thermal Resistance, Junction-ambient390 ℃/W
Data and specifications subject to change without notice
AP9924GO
RoHS-compliant Product
Parameter Rating
Drain-Source Voltage 20
Gate-Source Voltage +8
Continuous Drain Current36.8
Total Power Dissipation 1.38
Continuous Drain Current35.4
Pulsed Drain Current120
Storage Temperature Range -55 to 150
Operating Junction Temperature Range -55 to 150
Thermal Data
Parameter
1
2009002021
A
dvanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G2
D
S2
G1
D
S1
DS2 S2 G2
DS1 S1 G1
TSSOP-8
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
RDS(ON) Static Drain-Source On-Resistance2VGS=4.5V, ID=6A - - 20 mΩ
VGS=2.5V, ID=4A - - 30 mΩ
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 0.25 - 1 V
gfs Forward Transconductance VDS=10V, ID=6A - 19 - S
IDSS Drain-Source Leakage Current VDS=20V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS= +8V, VDS=0V - - +100 nA
QgTotal Gate Charge2ID=6A - 9 14.4 nC
Qgs Gate-Source Charge VDS=16V - 1 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4.5 - nC
td(on) Turn-on Delay Time2VDS=10V - 8 - ns
trRise Time ID=1A - 10 - ns
td(off) Turn-off Delay Time RG=3.3Ω,VGS=5V - 16 - ns
tfFall Time RD=10Ω-7-
ns
Ciss Input Capacitance VGS=0V - 400 640 pF
Coss Output Capacitance VDS=20V - 120 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 110 - pF
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
VSD Forward On Voltage2IS=1.2A, VGS=0V - - 1.2 V
trr Reverse Recovery Time2IS=6A, VGS=0V, - 24 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t <10sec ; 250℃/W when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
AP9924GO
2
AP9924G
O
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics
Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.
Reverse Diode Junction Temperature
3
10
20
30
40
12345
VGS , Gate-to-Source Voltage (V)
RDS(ON) (m
Ω
)
ID=4A
TA=25oC
0.6
0.8
1.0
1.2
1.4
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized RDS(ON)
ID=6A
VG=4.5V
0.4
0.8
1.2
1.6
-50 0 50 100 150
Tj , Junction Temperature ( oC)
Normalized VGS(th) (V)
0
2
4
6
0 0.2 0.4 0.6 0.8 1 1.2
VSD , Source-to-Drain Voltage (V)
IS(A)
Tj=25oC
Tj=150oC
0
10
20
30
40
001122
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=25oC5.0V
4.5V
3.5V
2.5V
VG=2.0V
0
10
20
30
40
0123
VDS , Drain-to-Source Voltage (V)
ID , Drain Current (A)
TA=150oC5.0V
4.5V
3.5V
2.5V
VG=2.0V
Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4
AP9924GO
td(on) trtd(off)tf
VDS
VGS
10%
90%
Q
VG
4.5V
QGS QGD
QG
Charge
0
2
4
6
8
0481216
QG , Total Gate Charge (nC)
VGS , Gate to Sourc e Voltage ( V)
VDS =10V
VDS =12V
VDS =16V
ID=6A
0
200
400
600
800
1 5 9 13 17 21 25
VDS , Drain-to-Source Voltage (V)
C (pF)
f
=1.0MH
z
Ciss
Coss
Crss
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
t , Pulse Width (s)
Normalized Th e rmal Re sponse (Rthja)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=250oC/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1 1 10 100
VDS , Drain-to-Source Voltage (V)
ID (A)
TA=25oC
Single Pulse
100us
1ms
10ms
100ms
1s
DC
