BCV27, BCV47 NPN Darlington Transistors Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage NPN Version 2004-01-20 Power dissipation - Verlustleistung Plastic case Kunststoffgehause 1.1 2.9 0.1 0.4 1.3 0.1 2.5 max 3 Type Code 2 1 250 mW 1.9 Dimensions / Mae in mm 1 = B1 2 = E2 3 = C SOT-23 (TO-236) Weight approx. - Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C) BCV27 BCV47 Collector-Emitter-voltage VBE = 0 VCES 30 V 60 V Collector-Base-voltage E open VCB0 40 V 80 V Emitter-Base-voltage C open VEB0 10 V Power dissipation - Verlustleistung Ptot 250 mW 1) Collector current - Kollektorstrom (dc) IC 500 mA Peak Collector current - Kollektor-Spitzenstrom ICM 800 mA Base current - Basisstrom (dc) IB 100 mA Junction temperature - Sperrschichttemperatur Tj 150/C Storage temperature - Lagerungstemperatur TS - 65...+ 150/C Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. ICB0 ICB0 - - - - 100 nA 100 nA IEB0 - - 100 nA - - 1V Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 30 V IE = 0, VCB = 60 V BCV27 BCV47 Emitter-Base cutoff current - Emitterreststrom IC = 0, VEB = 10 V Collector saturation volt. - Kollektor-Sattigungsspg. 2) IC = 100 mA, IB = 0.1 mA 1 VCEsat ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% 8 Darlington Transistors BCV27, BCV47 Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C) Min. Typ. Max. - - 1.5 V 1 Base saturation voltage - Basis-Sattigungsspannung ) IC = 100 mA, IB = 0.1 mA VBEsat DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 5 V, IC = 1 mA BCV27 BCV47 hFE hFE 4000 2000 - - - - VCE = 5 V, IC = 10 mA BCV27 BCV47 hFE hFE 10000 4000 - - - - VCE = 5 V, IC = 100 mA BCV27 BCV47 hFE hFE 20000 10000 - - - - - VBEon - - 1.4 V fT - 220 MHz - Base-Emitter voltage - Basis-Emitter-Spannung 1) VCE = 5 V, IC = 10 mA Gain-Bandwidth Product - Transitfrequenz VCE = 5 V, IC = 10 mA, f = 100 MHz Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft 420 K/W 2) RthA Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung BCV26, BCV46 BCV27 = FF BCV47 = FG Pinning - Anschlubelegung 3 T1 T2 1 1 2 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% - Gemessen mit Impulsen tp = 300 :s, Schaltverhaltnis # 2% ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu 9