1) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß
2) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
8
2.5
max
1.3
±0.1
1.1
2.9
±0.1
0.4
12
3
Type
Code
1.9
BCV27, BCV47 Darlington Transistors
NPN Surface mount Si-Epitaxial PlanarTransistors NPN
Si-Epitaxial PlanarTransistoren für die Oberflächenmontage
Version 2004-01-20
Power dissipation – Verlustleistung 250 mW
Plastic case SOT-23
Kunststoffgehäuse (TO-236)
Weight approx. – Gewicht ca. 0.01 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Dimensions / Maße in mm
1 = B1 2 = E2 3 = C Standard packaging taped and reeled
Standard Lieferform gegurtet auf Rolle
Maximum ratings (TA = 25/C) Grenzwerte (TA = 25/C)
BCV27 BCV47
Collector-Emitter-voltage VBE = 0 VCES 30 V 60 V
Collector-Base-voltage E open VCB0 40 V 80 V
Emitter-Base-voltage C open VEB0 10 V
Power dissipation – Verlustleistung Ptot 250 mW 1)
Collector current – Kollektorstrom (dc) IC500 mA
Peak Collector current – Kollektor-Spitzenstrom ICM 800 mA
Base current – Basisstrom (dc) IB100 mA
Junction temperature – Sperrschichttemperatur Tj150/C
Storage temperature – Lagerungstemperatur TS- 65…+ 150/C
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Collector-Base cutoff current – Kollektorreststrom
IE = 0, VCB = 30 V
IE = 0, VCB = 60 V BCV27
BCV47 ICB0
ICB0
–
––
–100 nA
100 nA
Emitter-Base cutoff current – Emitterreststrom
IC = 0, VEB = 10 V IEB0 – – 100 nA
Collector saturation volt. – Kollektor-Sättigungsspg. 2)
IC = 100 mA, IB = 0.1 mA VCEsat – – 1 V
1) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2%
2) Mounted on P.C. board with 3 mm2 copper pad at each terminal
Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 9
1
3
2
T1 T2
Darlington Transistors BCV27, BCV47
Characteristics (Tj = 25/C) Kennwerte (Tj = 25/C)
Min. Typ. Max.
Base saturation voltage – Basis-Sättigungsspannung 1)
IC = 100 mA, IB = 0.1 mA VBEsat – – 1.5 V
DC current gain – Kollektor-Basis-Stromverhältnis 1)
VCE = 5 V, IC = 1 mA BCV27
BCV47 hFE
hFE
4000
2000 –
––
–
VCE = 5 V, IC = 10 mA BCV27
BCV47 hFE
hFE
10000
4000 –
––
–
VCE = 5 V, IC = 100 mA BCV27
BCV47 hFE
hFE
20000
10000 –
––
–
Base-Emitter voltage – Basis-Emitter-Spannung 1)
VCE = 5 V, IC = 10 mA - VBEon – – 1.4 V
Gain-Bandwidth Product – Transitfrequenz
VCE = 5 V, IC = 10 mA, f = 100 MHz fT– 220 MHz –
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2)
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren BCV26, BCV46
Marking – Stempelung BCV27 = FF BCV47 = FG
Pinning – Anschlußbelegung
