Preliminary Data Sheet
November 20 04
AGR09030E
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET
Introduction
The AGR09030E is a high-voltage, gold-metalized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power transistor suitable for cellular
band, code-division multiple access (CDMA), global
system for mobile communication (GSM), enhanced
data for global evolution (EDGE), and time-division
multiple access (TDMA) single and multicarrier class
AB wireless base station amplifier applications. This
device is manufactured on an advanced LDMOS
technology, offering state-of-the-art performance,
reliability, and thermal resistance. Packaged in an
industry-standard CuW package capable of deliver-
ing a minimum output power of 30 W, it is ideally
suited for today's RF power amplifier applications.
Figure 1. Available Packages
Features
■Typical performance ratings are for IS-95 CDMA,
pilot, sync, paging, traf fic codes 8—13:
— Output powe r (POUT): 7 W.
— Power gain: 21 dB.
— Efficiency: 27%.
— Adjacent ch annel power ratio (ACPR) for
30 kHz bandwidth (BW):
(750 kHz offset: –45 dBc)
(1.98 MHz offset: –60 dBc).
— Input return loss: 10 dB.
■High-reliability, gold-metalization process.
■High gain, efficiency, and linearity.
■Integrated ESD protection.
■Si LDMOS.
■Industry-standard packages.
■30 W minimum output power.
Table 1. Thermal Characteristics
Table 2. Absolute Maximum Ratings*
* St ress es in excess of the absolute maximu m ratings can cause
permanent damage to the device. These are absolute stress rat-
ings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Tab le 3. ESD Rating*
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. Agere
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22- A114B (HBM), JES D22-A 115A (MM), and
JESD22-C101A (CDM ) standards.
Caution: MOS devices are susceptible to damage from elec-
trostatic charge. Reasonable precautions in han-
dling and packaging MOS devices should be
observed.
AGR09030EU (unflanged) AGR09030EF (flanged)
Parameter Sym Value Unit
Thermal Resistance,
Junction to Case:
AGR09030EU
AGR09030EF RθJC
RθJC 1.85
2.2 °C/W
°C/W
Parameter Sym Value Unit
Drain-source V oltage VDSS 65 Vdc
Gate-source V oltage VGS –0.5, +15 Vdc
Drain Current—Continuous ID4.25 Adc
Total Dissipation at TC = 25 °C:
AGR09030EU
AGR09030EF PD
PD95
80 W
W
Derate Above 25 °C:
AGR09030EU
AGR09030EF —
—0.54
0.45 W/°C
W/°C
Operating Junction Tempera-
ture TJ200 °C
S torage Temperature Range TSTG –65, +150 °C
AGR09030E Minimum (V) Class
HBM 500 1B
MM 50 A
CDM 1500 4
2Agere Systems Inc.
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET November 2004
AGR09030E Preliminary Data Sheet
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Table 5. RF Characteristics
Parameter Symbol Min Typ Max Unit
Off Characteristics
Drain-source Breakdown Voltage (VGS =0, ID=100µA) V(BR)DSS 65 — — Vdc
Gate-source Leakage Current (VGS =5V, VDS =0V) IGSS — — 0.95 µAdc
Zero Gate Voltage Drain Leakage Current (VDS =28V, VGS =0V) IDSS ——2.9µAdc
On Characteristics
Forward Transconductance (VDS =10V, ID=1.0A) GFS —2.2— S
Gate Threshold Voltage (VDS =10V, ID = 400 µA) VGS(TH) ——5.0Vdc
Gate Quiescent Voltage (VDS =28V, IDQ = 330 mA) VGS(Q) —3.8—Vdc
Drain-source On-voltage (VGS =10V, ID = 1.0 A ) VDS(ON) —0.35— Vdc
Parameter Symbol Min Typ Max Unit
Dynamic Characteris tics
Input Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz) CISS —56— pF
Output Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz) COSS —15.7— pF
Reverse Transfer Capacitance
(VDS = 28 Vdc, VGS = 0, f = 1 MHz) CRSS —0.73— pF
Functional Tests (in Agere Systems Supplied Test Fixture)
(Test frequencies (f) = 865 MHz, 880 MHz, 895 MHz)
Linear Power Gain
(VDS = 28 V, POUT = 5 W, IDQ = 330 mA) GL19 21 — dB
Output Power
(VDS = 28 V, 1 dB compression, IDQ = 330 mA) P1dB 30 40 — W
Drain Efficiency
(VDS = 28 V, POUT = P1dB, IDQ = 330 mA) η—57— %
Third-order Intermodulation Distortion
(100 kHz spacing, VDS = 28 V, POUT = 30 WPEP, IDQ = 330 mA) IMD — –31 — dBc
Input Return Loss IRL —10— dB
Ruggedness
(VDS = 28 V, POUT = 30 W, IDQ = 330 mA, f = 880 MHz,
VSWR = 10:1, all angles)
— No degradation in output power.
Agere Systems Inc. 3
Preliminary Data Sheet AGR09030E
November 2004 30 W, 865 MHz—895 MHz, N-Chann el E-Mode, Lateral MOSFET
Test Circuit Illustrations for AGR09030E
A. Schem atic
Parts List:
■Microstrip line: Z1 0.900 in. x 0.066 in.; Z2 0.294 in. x 0.050 in.; Z3 0.123 in. x 0.066 in.; Z4 0.703 in. x 0.066 in.; Z5 0.267 in. x 0.150 in.;
Z6 0.270 in. x 0.150 in.; Z7 0.050 in. x 0.440 in.; Z8 0.324 in. x 0.440 in.; Z9 0.100 in. x 0.440 in.; Z10 0.155 in. x 0.440 in.;
Z11 1.024 in. x 0.050 in.; Z12 0.123 in. x 0.300 in.; Z13 0.050 in. x 0.300 in.; Z14 0.213 in. x 0.300 in.; Z15 0.393 in. x 0.100 in.;
Z16 0.194 in. x 0.100 in.; Z17 0.523 in. x 0.066 in.; Z18 1.085 in. x 0.066 in.; Z19 2.048 x 0.050.
■ATC® chip capacitor: C1, C8, C18, C19: 47 pF, 100B470JW; C27: 8.2 pF, 100A8R2BW; C4, C5, C6, C7: 12 pF, 100B120JW;
C3: 1.0 pF, 100B1R0BW; C9, C16, C20: 10 pF, 100B100JW; C2, C17: 8.2 pF, 100B8R2BW.
■Murata® chip capacitor: C12, C23: 0.01 µF GRM40X7R103K100AL.
■0603 chip capacitor: C10, C21: 220 pF.
■Sprague® tantalum chip capacitor: C14, C25, C26: 22 µF, 35 V.
■Kreger® ferrite bead: FB1: 2743D19447.
■Kemet® chip capacitor: C13, C24: 0.10 µF C1206C104KRAC7800.
■Vitramon® chip capacitor: C11, C22: 2200 pF, VJ1206Y222KXA.
■1206 size 0.25 W, fixed film, chip resistors: R1: 51 Ω, RM73B2B510J; R2: 47 kΩ, RM73B2B473J; R3: 1 kΩ, RM73B2B10 2J.
■Taconic® ORCER RF-35: board material, 1 oz. copper , 30 mil thickness, εr = 3.5.
B. Component Layout
Figure 2. AGR09030E Test Circuit
DUT
C14
R1
C13 C12
C3
FB1
Z12
Z3 C1 Z4 Z5 Z6 Z7
Z8 Z9
C22C21C20C19
Z19
C25C24
+
C23
RF INPUT
VGG VDD
C11 C10 C9 C8
C2
C4 C6
Z10
C5 C7
Z14
RF OUTPUT
C17
Z15
C16
1
2
3PINS:
1. DRAIN
2. GATE
3. SOURCE
Z11
C26 R2
R3
+
Z13
+
Z1
Z2
C27
Z18C18Z17Z16
4Agere Systems Inc.
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET November 2004
AGR09030E Preliminary Data Sheet
Typical Performance Characteristics
Figure 3. Series Equivalent Input and Output Impedances
MHz (f) ZS Ω
(Complex Source Impedance)
ZL Ω
(Complex Optimum Load Impedance)
865 (f1) 0.618 + j0.290 3.26 + j2.10
880 (f2) 0.711 + j0.364 3.39 + j2.47
895 (f3) 0.788 + j0.380 3.55 + j2.83
0.1
0.1
0.1
0.2
0.2
0.2
0.3
0.3
0.4
0.4
0.5
0.5
0.6
0.6
0.7
0.7
0.8
0.8
0.9
0.9
1.01.0
1.2
1.2
1.4
1.4
1.6
1.8
2.0
0.2
0.2
0.2
0.4
0.4
0.4
0.6
0.6
0.6
0.8
0.8
0.8
1.0
0
1.0
1.0
70
80
90
100
110
120
130
140
150
160
-160
170
-170
180
±
90-90
85
-85
80
75
70
65
60
55
50
45
40
35
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0.11
0.12
0.13
0.14
0.15
0.35
0.36
0.37
0.38
0.39
0.4
0.41
0.42
0.43
0.44
0.45
0.46
0.47
.47
0.48
0.48
0.49
0.49
0.0
0.0
—
>
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
G
E
N
E
R
A
T
O
R
—
>
W
A
V
E
L
E
N
G
T
H
S
T
O
W
A
R
D
L
O
A
D
<
—
I
N
D
U
C
T
I
V
E
R
E
A
C
T
A
N
C
E
C
O
M
P
O
N
E
N
T
(
+
j
X
/
Z
o
)
,
O
R
C
A
P
A
C
I
T
I
V
E
S
U
S
C
E
P
T
A
N
C
E
(
+
j
B
/
Y
o
)
P
T
A
N
C
E
(
-
j
B
/
Y
o
)
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
Z0 = 8 Ω
ZL
f1 f3
f1 f3
ZS
DUT
ZSZL
INPUT MATCH OUTPUT MATCH
DRAIN (1)
SOURCE (3)
GATE (2)
Agere Systems Inc. 5
Preliminary Data Sheet AGR09030E
November 2004 30 W, 865 MHz—895 MHz, N-Chann el E-Mode, Lateral MOSFET
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C.
IS-95 CDMA PILOT, PA GING, SYNC, TRAFFIC CODES 8—13. OFFSET 1 = 750 kHz, 30 kHz BW. OFFSET 2 = 1.98 MHz, 30 kHz BW.
Figure 4. ACPR vs. POUT
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C, WAVEFORM = CW.
Figure 5. Power Gain and Retur n Loss vs. Frequency
-80
-70
-60
-50
-40
-30
-20
-10
0
0 5 10 15 2
0
POUT (W)X
ACPR (dBc)X
A
CP+
A
CP-
A
CP1+
A
CP1-
FREQUENCY = 880 MHz
10
11
12
13
14
15
16
17
18
19
20
21
22
23
860 865 870 875 880 885 890 895 900
FREQUENCY (MHz)X
POWER GAIN (dB)X
-18.0
-16.0
-14.0
-12.0
-10.0
-8.0
-6.0
-4.0
-2.0
0.0
INPUT RETURN LOSS (dB)X
POWER GAIN POUT = 5 W
POUT = 40 W
RETURN LOSS
6Agere Systems Inc.
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET November 2004
AGR09030E Preliminary Data Sheet
Typical Performance Characteristics (continued)
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C, WAVEFORM = CW.
Figure 6. Power Gain vs. Power Out
TEST CONDITIONS:
VDD = 28 Vdc, IDQ = 0.33 A, TC = 30 °C, WAVEFORM = CW.
Figure 7. Power Out and Drain Efficiency vs. Input Power
0
2
4
6
8
10
12
14
16
18
20
22
24
10 20 30 40 50 6
0
P
OUT
(W)X
POWER GAIN (P
G
) (dB)X
865 MHz
880 MHz
895 MHz
0
5
10
15
20
25
30
35
40
45
50
55
60
65
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7
P
IN
(W)X
P
OUT
(W)X
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
DRAIN EFFICIENCY (%)X
P
OUT
EFFICIENCY
895 MHz
880 MHz
865 MHz
895 MHz
880 MHz
865 MHz
Agere Systems Inc. 7
Preliminary Data Sheet AGR09030E
November 2004 30 W, 865 MHz—895 MHz, N-Chann el E-Mode, Lateral MOSFET
Package Dimensions
All dimensions are in inches. Tolerances are ± 0.005 in. unless specified.
AGR09030EU
AGR09030EF
Label Notes:
■M before the part number denotes model program. X before the part number denotes engineering prototype.
■The last two letters of the part number denote wafer technology and package type.
■YYWWLL is the date code including place of manufacture: year year work week (YYWW), LL = location (AL = Allentown, PA; T = Thailand).
XXXXX = five-digit wafer lot number.
■ZZZZZZZ = seven-digit assembly lot number on production parts.
■ZZZZZZZZZ ZZZ = 12-digi t (fiv e-di git lot, two-digit wafer, and five-digit serial number) on models and engineering prototypes.
PINS:
1. DRAIN
2. GATE
3. SOURCE
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
2
3
2
13
AGERE
AGR09030XU
YYWWLL XXXXX
ZZZZZZZ
11
22
33
AGERE
AGR09030XF
YYWWLL XXXXX
ZZZZZZZ
30 W, 865 MHz—895 MHz, N-Channel E-Mode, Lateral MOSFET November 2004
AGR09030E Preliminary Data Sheet
ATC is a registered trademark of American Technical Ceramics Corp.
Kemet is a registered trademark of KRC Trade Corporation.
Sprague is a registered trademark of Sprague Elec tric Company Corporation.
Murata is a registered trademark of Murata Electronics North America, Inc.
Kreger is a registered trademark of Kreger Components, Inc.
Vitramon is a registered trademark of Vitramon Incorporated.
Taconic is a registered trademark of Tonoga Limited DBA Taconic Plastics Ltd.
Agere Systems Inc. reserves the right to make changes to the product(s) or information contained herein without notice. No liability is assumed as a result of their use or application.
Agere is a registered trademark of Agere Systems Inc. Agere Systems and the Agere logo are trademarks of Agere Systems Inc.
Copyright © 2004 Agere Systems Inc.
All Rights Reserved
November 2004
DS04-294RFPP (Replaces D S04-197R FPP)
For additional information, contact your Agere Systems Account Manager or the following:
INTERNET: http://www.agere.com
E-MAIL: docmaster@agere.com
N. AMERICA: Agere Systems Inc., Lehigh Valley Central Campus, Room 10A-301C, 1110 American Parkway NE, Allentown, PA 18109-9138
1-800-372-2447, FAX 610-712-4106 (In CANADA: 1-800-553-2448, FAX 610 - 712-4106)
ASIA: CHINA: (86) 21-5 4614688 (Shanghai), (86) 755 - 25 881122 (Shenzhen)
JAPAN: (81) 3-5421-1600 (Tokyo), KOREA: (82) 2-767-1850 (Seoul), SINGAPORE: (65) 6741-9855, TAIWAN: (886) 2-2725-5858 (Taipei)
EUROPE: Tel. (44) 1344 296 400
RF Power Product Information
For product and application information, please visit our website: http://www.agere.com/rfpower.
