FCA47N60_F109 - ON SEMICONDUCTOR

September 2017

FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET

FCA47N60 / FCA47N60_F109 Rev. 1

www.fairchildsemi.com

FCA47N60 / FCA47N60_F109

N-Channel SuperFET® MOSFET

600 V, 47 A, 70 mΩ

Features

•650 V

@ T

J = 150°C

•Typ.

DS(on) = 58 mΩ

• Ultra Low Gate Charge (Typ. Qg= 210 nC)

• Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)

• 100% Avalanche Tested

Application

• Solar Invertor

• AC-DC Power Supply

Description

SuperFET® MOSFET is Fairchild Semiconductor’s first genera-

tion of high voltage super-junction (SJ) MOSFET family that is

utilizing charge balance technology for outstanding low on-

resistance and lower gate charge performance. This technology

is tailored to minimize conduction loss, provide superior switch-

ing performance, dv/dt rate and higher avalanche energy. Con-

sequently, SuperFET MOSFET is very suitable for the switching

power applications such as PFC, server/telecom power, FPD

TV power, ATX power and industrial power applications.

TO-3PN

Absolute Maximum Ratings

Thermal Characteristics

Symbol Parameter FCA47N60 FCA47N60_F109 Unit

VDSS Drain-Source Voltage 600 V

IDDrain Current - Continuous (TC = 25°C)

- Continuous (TC = 100°C)

29.7

IDM Drain Current - Pulsed (Note 1) 141 A

VGSS Gate-Source voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 1800 mJ

IAR Avalanche Current (Note 1) 47 A

EAR Repetitive Avalanche Energy (Note 1) 41.7 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns

PDPower Dissipation (TC = 25°C)

- Derate above 25°C

417

3.33

W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds 300 °C

Symbol Parameter Typ. Max. Unit

RθJC Thermal Resistance, Junction-to-Case, Max. -- 0.3 °C/W

RθJA Thermal Resistance, Junction-to-Ambient, Max. -- 41.7 °C/W

FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET

FCA47N60 / FCA47N60_F109 Rev. 1

www.fairchildsemi.com

Package Marking and Ordering Information

Electrical Characteristics TC = 25oC unless otherwise noted.

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Device Marking Device Package Reel Size Tape Width Quantity

FCA47N60 FCA47N60 TO-3PN - - 30

FCA47N60 FCA47N60_F109 TO-3PN - - 30

Symbol Parameter Test Conditions Min. Typ. Max. Unit

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 μA, TJ = 25°C 600 -- -- V

VGS = 0 V, ID = 250 μA, TJ = 150°C-

-6

50 -- V

ΔBVDSS

/ ΔTJ

Breakdown Voltage Temperature

Coefficient ID = 250 μA, Referenced to 25°C--0.6--V/°C

BVDS Drain-Source Avalanche Breakdown

Voltage

VGS = 0 V, ID = 47 A -- 700 -- V

IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V

VDS = 480 V, TC = 125°C

μA

IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA3.0--5.0

RDS(on) Static Drain-Source

On-Resistance VGS = 10 V, ID = 23.5 A -- 0.058 0.07

gFS Forward Transconductance VDS = 20 V, ID = 23.5 A -- 40 --

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 μA3.0--5.0

Ciss Input Capacitance VDS = 25 V, VGS = 0 V,

f = 1.0 MHz

-- 5900 8000 pF

Coss Output Capacitance -- 3200 4200 pF

Crss Reverse Transfer Capacitance -- 250 -- pF

Coss Output Capacitance VDS = 480 V, VGS = 0 V, f = 1.0 MHz -- 160 -- pF

Coss eff. Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V -- 420 -- pF

td(on)Turn-On Delay Time VDD = 300 V, ID = 47 A

RG = 25 Ω

(Note 4)

-- 185 430 ns

trTurn-On Rise Time -- 210 450 ns

td(off) Turn-Off Delay Time -- 520 1100 ns

tfTurn-Off Fall Time -- 75 160 ns

QgTotal Gate Charge VDS = 480 V, ID = 47 A

VGS = 10 V

(Note 4)

-- 210 270 nC

Qgs Gate-Source Charge -- 38 -- nC

Qgd Gate-Drain Charge -- 110 -- nC

ISMaximum Continuous Drain-Source Diode Forward Current -- -- 47 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 141 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 47 A -- -- 1.4 V

trr Reverse Recovery Time VGS = 0 V, IS = 47 A

dIF/dt =100 A/μs (Note 4)

-- 590 -- ns

Qrr Reverse Recovery Charge -- 25 -- μC

Notes:

1. Repetitive Rating: Pulse-width limited by maximum junction temperature.

2. IAS = 18 A, RG = 25 Ω, starting TJ = 25°C

3. ISD ≤ 47 A, di/dt ≤ 200 A/μs, VDD = 380 V, starting TJ = 25°C

4. Essentially independent of operating temperature typical characteristics.

FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET

FCA47N60 / FCA47N60_F109 Rev. 1

www.fairchildsemi.com

Typical Characteristics

Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics

Figure 3. On-Resistance Variation vs. Figure 4. Body Diode Forward Voltage

Drain Current and Gate Voltage Variation vs. Source Current

and Temperatue

Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics

10-1 100101

100

101

102

VGS

Top : 15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

Notes :

1. 250 s Pulse Test

2. TC = 25

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

2468

100

101

102

Note

1. VDS = 40V

2. 250 s Pulse Test

-55

150

ID , Drain Current [A]

VGS , Gate-Source Voltage [V]

0 20 40 60 80 100 120 140 160 180 200

0.00

0.05

0.10

0.15

0.20

VGS = 20V

VGS = 10V

Note : T

J = 25

RDS(ON) [ ],Drain-Source On-Resistance

ID, Drain Current [A]

0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

100

101

102

150

Notes :

1. VGS = 0V

2. 250s Pulse Test

IDR , Reverse Drain Current [A]

VSD , Source-Drain Voltage [V]

10-1 100101

5000

10000

15000

20000

25000

30000

Ciss = Cgs + Cgd (Cds = shorted)

Coss = Cds + Cgd

Crss = Cgd

Notes :

1. VGS = 0 V

2. f = 1 MHz

Crss

Coss

Ciss

Capacitance [pF]

VDS, Drain-Source Voltage [V]

0 50 100 150 200 250

VDS = 250V

VDS = 100V

VDS = 400V

Note : ID = 47A

VGS, Gate-Source Voltage [V]

QG, Total Gate Charge [nC]

※

℃

※

℃

※

※ ℃

Ω

※

FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET

FCA47N60 / FCA47N60_F109 Rev. 1

www.fairchildsemi.com

Typical Characteristics (Continued)

Figure 7. Breakdown Voltage Variation Figure 8. On-Resistance Variation

vs. Temperature vs. Temperature

Figure 9. Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figure 11. Transient Thermal Response Curve

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

Notes :

1. VGS = 0 V

2. ID = 250 A

BVDSS, (Normalized)

Drain-Source Breakdown Voltage

TJ, Junction Temperature [oC]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

3.0

Notes :

1. VGS = 10 V

2. ID = 47 A

RDS(ON), (Normalized)

Drain-Source On-Resistance

TJ, Junction Temperature [oC]

100101102103

10-2

10-1

100

101

102

Operation in This Area

is Limited by R DS(on)

10 ms

1 ms

100 us

Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

ID, Drain Current [A]

VDS, Drain-Source Voltage [V]

25 50 75 100 125 150

ID, Drain Current [A]

TC, Case Temperature [ ]

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

Notes :

1. Z JC

(t) = 0.3 /W M ax.

2. D u ty F actor, D = t1/t2

3. T JM - TC = PDM * Z JC

(t)

single pulse

D=0.5

0.02

0.2

0.05

0.1

0.01

ZJC

(t), Thermal Response

t1, Square W ave Pulse Duration [sec]

PDM

※

μ※

℃

※

θ℃

FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET

FCA47N60 / FCA47N60_F109 Rev. 1

www.fairchildsemi.com

Figure 12. Gate Charge Test Circuit & Waveform

Figure 13. Resistive Switching Test Circuit & Waveforms

Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS

DUT

VGS

VDS

10%

90%

td(on) tr

ton toff

td(off) tf

VDD

10V

VDS

DUT

VGS

FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET

FCA47N60 / FCA47N60_F109 Rev. 1

www.fairchildsemi.com

Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

DUT

VDS

Driver

RGSame Type

as DUT

VGS • dv/dt controlled by RG

•I

SD controlled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pulse Period

--------------------------

D = Gate Pulse Width

Gate Pulse Period

--------------------------

FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET

FCA47N60 / FCA47N60_F109 Rev. 1

www.fairchildsemi.com

Mechanical Dimensions

Figure 16. TO3PN, 3-Lead, Plastic, EIAJ SC-65

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FCA47N60 / FCA47N60_F109 — N-Channel SuperFET® MOSFET

FCA47N60 / FCA47N60_F109 Rev. 1www.fairchildsemi.com

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Rev. I68