APL502B2 APL502L 500V 58A 0.090 B2 LINEAR MOSFET T-MAXTM TO-264 Linear Mosfets are optimized for applications operating in the Linear region where concurrent high voltage and high current can occur at near DC conditions (>100 msec). L D * Higher FBSOA * Popular T-MAXTM or TO-264 Package * Higher Power Dissipation G S MAXIMUM RATINGS Symbol VDSS ID All Ratings: TC = 25C unless otherwise specified. Parameter Drain-Source Voltage APL502B2-L UNIT 500 Volts 58 Continuous Drain Current @ TC = 25C 1 Amps IDM Pulsed Drain Current VGS Gate-Source Voltage Continuous 30 VGSM Gate-Source Voltage Transient 40 Total Power Dissipation @ TC = 25C 730 Watts Linear Derating Factor 5.84 W/C PD TJ,TSTG 232 Lead Temperature: 0.063" from Case for 10 Sec. IAR Avalanche Current EAR EAS -55 to 150 Operating and Storage Junction Temperature Range TL 1 58 1 Single Pulse Avalanche Energy C 300 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy Volts Amps 50 4 mJ 3000 STATIC ELECTRICAL CHARACTERISTICS Characteristic / Test Conditions / Part Number MIN BVDSS Drain-Source Breakdown Voltage (VGS = 0V, ID = 250 A) 500 Volts ID(ON) On State Drain Current 58 Amps IDSS IGSS VGS(TH) (VDS > ID(ON) x R DS(ON) Max, VGS = 12V) Drain-Source On-State Resistance 2 MAX 0.09 (VGS = 12V, 29A) Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V) 25 Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125C) 250 (VDS = VGS, ID = 2.5mA) 100 nA 4 Volts 2 CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT Website - http://www.advancedpower.com Ohms A Gate-Source Leakage Current (VGS = 30V, VDS = 0V) Gate Threshold Voltage UNIT 8-2003 RDS(ON) 2 TYP 050-5896 Rev D Symbol APL502B2-L DYNAMIC CHARACTERISTICS Symbol Test Conditions Characteristic MIN TYP MAX Ciss Input Capacitance VGS = 0V 7485 9000 Coss Output Capacitance VDS = 25V 1290 1810 Reverse Transfer Capacitance f = 1 MHz 617 930 Turn-on Delay Time VGS = 15V 13 26 Crss td(on) tr Rise Time td(off) Turn-off Delay Time tf Fall Time VDD = 250V 27 54 ID = 29A @ 25C 56 84 RG = 0.6 16 20 TYP MAX UNIT pF ns THERMAL CHARACTERISTICS Symbol Characteristic MIN RJC Junction to Case .17 RJA Junction to Ambient 40 1 Repetitive Rating: Pulse width limited by maximum junction temperature. 3 See MIL-STD-750 Method 3471 4 Starting T = +25C, L = 1.78mH, R = 25, Peak I = 58A j G L 2 Pulse Test: Pulse width < 380 S, Duty Cycle < 2% APT Reserves the right to change, without notice, the specifications and information contained herein. 0.18 0.9 0.14 0.7 0.12 0.10 0.5 Note: 0.08 0.06 PDM ZJC, THERMAL IMPEDANCE (C/W) 0.16 0.3 t2 0.04 Duty Factor D = t1/t2 0.1 0.02 10-5 Peak TJ = PDM x ZJC + TC SINGLE PULSE 0.05 0 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION RC MODEL Junction temp. ( "C) 0.0602 0.0158F 0.109 0.305F 8-2003 Power (Watts) 050-5896 Rev D t1 Case temperature FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL 1.0 UNIT C/W Typical Performance Curves 120 APL502B2-L 120 VGS=10V, 15 V 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 100 8V 80 7.5 V 60 7V 40 6.5 V 6V 20 5.5 V 5.5 V 0 0 60 40 TJ = +125C 20 TJ = -55C TJ = +25C 0 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) FIGURE 4, TRANSFER CHARACTERISTICS ID, DRAIN CURRENT (AMPERES) 60 50 40 30 20 10 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE 1.30 1.15 NORMALIZED TO = 10V @ 29A V GS 1.20 VGS=10V 1.10 1.00 0.90 0.80 VGS=20V 0.70 0 20 40 60 80 100 120 ID, DRAIN CURRENT (AMPERES) FIGURE 5, RDS(ON) vs DRAIN CURRENT 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE 8-2003 VDS> ID (ON) x RDS (ON)MAX. 250SEC. PULSE TEST @ <0.5 % DUTY CYCLE RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE VOLTAGE (NORMALIZED) ID, DRAIN CURRENT (AMPERES) (NORMALIZED) 80 0 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN 0 50 100 150 200 250 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS 050-5896 Rev D ID, DRAIN CURRENT (AMPERES) 100 ID, DRAIN CURRENT (AMPERES) VGS=10, 15V APL502B2-L 1.2 I V D = 29A GS = 12V VGS(TH), THRESHOLD VOLTAGE (NORMALIZED) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE (NORMALIZED) 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) FIGURE 8, ON-RESISTANCE vs. TEMPERATURE 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE 232 30,000 OPERATION HERE LIMITED BY RDS (ON) 100 10,000 100S 10 1mS 5 10mS 100mS 1 TC =+25C TJ =+150C SINGLE PULSE C, CAPACITANCE (pF) ID, DRAIN CURRENT (AMPERES) 1.1 Ciss 5,000 Coss 1,000 Crss 500 DC line .1 100 .01 .1 1 10 50 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE 1 5 10 50 100 500 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) FIGURE 10, MAXIMUM SAFE OPERATING AREA T-MAXTM (B2) Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) TO-264 (L) Package Outline 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 15.49 (.610) 16.26 (.640) 19.51 (.768) 20.50 (.807) 3.10 (.122) 3.48 (.137) 5.38 (.212) 6.20 (.244) 5.79 (.228) 6.20 (.244) Drain Drain 20.80 (.819) 21.46 (.845) 4.50 (.177) Max. 050-5896 Rev D 8-2003 0.40 (.016) 0.79 (.031) 25.48 (1.003) 26.49 (1.043) 2.87 (.113) 3.12 (.123) 2.29 (.090) 2.69 (.106) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 19.81 (.780) 21.39 (.842) Gate Drain 5.45 (.215) BSC 2-Plcs. These dimensions are equal to the TO-247 without the mounting hole. Dimensions in Millimeters and (Inches) Gate Drain Source Source 2.21 (.087) 2.59 (.102) 2.29 (.090) 2.69 (.106) 0.48 (.019) 0.84 (.033) 2.59 (.102) 3.00 (.118) 0.76 (.030) 1.30 (.051) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.