Symbol
VDSS
ID
IDM
VGS
VGSM
PD
TJ,TSTG
TL
IAR
EAR
EAS
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specified.
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-5896 Rev D 8-2003
Characteristic / Test Conditions / Part Number
Drain-Source Breakdown Voltage (VGS = 0V, I D = 250 µA)
On State Drain Current 2 (VDS > ID(ON) x RDS(ON) Max, VGS = 12V)
Drain-Source On-State Resistance 2 (VGS = 12V, 29A)
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
MIN TYP MAX
500
58
0.09
25
250
±100
24
UNIT
Volts
Amps
Ohms
µA
nA
Volts
Symbol
BVDSS
ID(ON)
RDS(ON)
IDSS
IGSS
VGS(TH)
APT Website - http://www.advancedpower.com
LINEAR MOSFET
Linear Mosfets are optimized for applications operating in the Linear
region where concurrent high voltage and high current can occur at
near DC conditions (>100 msec).
• Higher FBSOA
• Higher Power Dissipation
• Popular T-MAX™ or TO-264 Package
Parameter
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C
Pulsed Drain Current 1
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Avalanche Current 1 (Repetitive and Non-Repetitive)
Repetitive Avalanche Energy 1
Single Pulse Avalanche Energy 4
UNIT
Volts
Amps
Volts
Watts
W/°C
°C
Amps
mJ
APL502B2-L
500
58
232
±30
±40
730
5.84
-55 to 150
300
58
50
3000
T-MAX™
TO-264
B2
APL502B2
APL502L
500V 58A 0.090ΩΩ
ΩΩ
Ω
G
D
S
L
DYNAMIC CHARACTERISTICS APL502B2-L
050-5896 Rev D 8-2003
Symbol
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
MIN TYP MAX
7485 9000
1290 1810
617 930
13 26
27 54
56 84
16 20
UNIT
pF
ns
Test Conditions
VGS = 0V
VDS = 25V
f = 1 MHz
VGS = 15V
VDD = 250V
ID = 29A @ 25°C
RG = 0.6Ω
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
THERMAL CHARACTERISTICS
Characteristic
Junction to Case
Junction to Ambient
Symbol
RθJC
RθJA
MIN TYP MAX
.17
40
UNIT
°C/W
1Repetitive Rating: Pulse width limited by maximum junction 3See MIL-STD-750 Method 3471
temperature. 4Starting Tj = +25°C, L = 1.78mH, RG = 25Ω, Peak IL = 58A
2Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Note:
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
t1
t2
PDM
10-5 10-4 10-3 10-2 10-1 1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
0.18
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
0.5
0.1
0.3
0.7
0.9
0.05
ZΘJC, THERMAL IMPEDANCE (°C/W)
SINGLE PULSE
FIGURE 1a, TRANSIENT THERMAL IMPEDANCE MODEL
0.0602
0.109
0.0158F
0.305F
Power
(Watts)
RC MODEL
Junction
temp. ( ”C)
Case temperature
ID, DRAIN CURRENT (AMPERES) ID, DRAIN CURRENT (AMPERES)
(NORMALIZED)
BVDSS(ON), DRAIN-TO-SOURCE BREAKDOWN RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
VOLTAGE (NORMALIZED)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
TJ = +125°C
TJ = +25°C TJ = -55°C
VGS=10V
VGS=20V
NORMALIZED TO
VGS = 10V @ 29A
050-5896 Rev D 8-2003
Typical Performance Curves
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPERES)
FIGURE 4, TRANSFER CHARACTERISTICS FIGURE 5, RDS(ON) vs DRAIN CURRENT
TC, CASE TEMPERATURE (°C) TJ, JUNCTION TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
0 2 4 6 8 10 0 20 40 60 80 100 120
25 50 75 100 125 150 -50 0 50 100 150
1.30
1.20
1.10
1.00
0.90
0.80
0.70
1.15
1.10
1.05
1.00
0.95
0.90
80
60
40
20
0
60
50
40
30
20
10
0
APL502B2-L
ID, DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
120
100
80
60
40
20
0
120
100
80
60
40
20
0
0 50 100 150 200 250 0 5 10 15 20 25 30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, HIGH VOLTAGE OUTPUT CHARACTERISTICS FIGURE 3,LOW VOLTAGE OUTPUT CHARACTERISTICS
7 V
6 V
6.5 V
VGS=10V, 15 V
5.5 V
7 V
6 V
6.5 V
5.5 V
7.5 V
VGS=10, 15V
7.5 V
8 V 8 V
APL502B2-L
050-5896 Rev D 8-2003
15.49 (.610)
16.26 (.640)
5.38 (.212)
6.20 (.244)
4.50 (.177) Max.
19.81 (.780)
20.32 (.800)
20.80 (.819)
21.46 (.845)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2.87 (.113)
3.12 (.123)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
2.21 (.087)
2.59 (.102)
0.40 (.016)
0.79 (.031)
Drain
Source
Gate
These dimensions are equal to the TO-247 without the mounting hole.
Drain
2-Plcs.
19.51 (.768)
20.50 (.807)
19.81 (.780)
21.39 (.842)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
0.76 (.030)
1.30 (.051)
3.10 (.122)
3.48 (.137)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
2.59 (.102)
3.00 (.118)
0.48 (.019)
0.84 (.033)
Drain
Source
Gate
Dimensions in Millimeters and (Inches)
Drain
2.29 (.090)
2.69 (.106)
5.79 (.228)
6.20 (.244)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
T-MAXTM (B2) Package Outline TO-264 (L) Package Outline
ID, DRAIN CURRENT (AMPERES) RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
C, CAPACITANCE (pF) VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
TJ, JUNCTION TEMPERATURE (°C) TC, CASE TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
1 5 10 50 100 500 .01 .1 1 10 50
Crss
Coss
Ciss
OPERATION HERE
LIMITED BY RDS (ON)
TC =+25°C
TJ =+150°C
SINGLE PULSE
100µS
1mS
10mS
100mS
ID = 29A
VGS = 12V
1.2
1.1
1.0
0.9
0.8
0.7
0.6
30,000
10,000
5,000
1,000
500
100
2.5
2.0
1.5
1.0
0.5
0.0
232
100
10
5
1
.1
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
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