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1
2
3
4
Low Noise Silicon Bipolar RF Transistor
• Low current device suitable e.g. for handhelds
• For high frequency oscillators e.g. DRO for LNB
• For ISM band applications like
Automatic Meter Reading, Sensors etc.
• Transit frequency fT = 25 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFP410 AKs 1=B 2=E 3=C 4=E - - SOT343
Maximum Ratings at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Collector-emitter voltage
TA = 25 °C
T
A
= -55 °C
VCEO
4.5
4.1
V
Collector-emitter voltage VCES 13
Collector-base voltage VCBO 13
Emitter-base voltage VEBO 1.5
Collector current IC40 mA
Base current IB6
Total power dissipation1)
TS ≤ 100 °C
Ptot 150 mW
Junction temperature TJ150 °C
Storage temperature TSt
g
-55 ... 150
1TS is measured on the emitter lead at the soldering point to the pcb
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Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1) RthJS 335 K/W
Electrical Characteristics at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0
V(BR)CEO 4.5 5 - V
Collector-emitter cutoff current
VCE = 2 V, VBE = 0
VCE = 5 V, VBE = 0 , TA = 85 °C
(verified by random sampling)
ICES
-
-
1
2
30
50
nA
Collector-base cutoff current
VCB = 2 V, IE = 0
ICBO - 1 30
Emitter-base cutoff current
VEB = 0.5 V, IC = 0
IEBO - 0.001 0.6 µA
DC current gain
IC = 13 mA, VCE = 2 V, pulse measured
hFE 60 95 130 -
1For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)
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Electrical Characteristics at T
A
= 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 20 mA, VCE = 2 V, f = 2 GHz
fT18 25 - GHz
Collector-base capacitance
VCB = 2 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.09 0.17 pF
Collector emitter capacitance
VCE = 2 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.35 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 0.45 -
Minimum noise figure
IC = 2 mA, VCE = 2 V, f = 2 GHz, ZS = ZSopt
NFmin - 1.2 - dB
Power gain, maximum stable1)
IC = 20 mA, VCE = 2 V, ZS = ZSopt,
ZL = ZLopt , f = 2 GHz
Gms - 21.5 - dB
Insertion power gain
VCE = 2 V, IC = 20 mA, f = 2 GHz,
ZS = ZL = 50 Ω
|S21|2- 18.5 -
Third order intercept point at output2)
VCE = 2 V, IC = 20 mA, f = 2 GHz,
ZS = ZL = 50 Ω
IP3 - 23.5 - dBm
1dB compression point at output
IC = 20 mA, VCE = 2 V, ZS = ZL = 50 Ω,
f = 2 GHz
P-1dB - 10.5 -
1Gms = |S21 / S12|
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
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Total power dissipation Ptot = ƒ(TS)
0 20 40 60 80 100 120 °C 160
TS
0
20
40
60
80
100
120
140
mW
180
Ptot
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 0.5 1 1.5 2 2.5 3 V4
VCB
0
0.05
0.1
0.15
0.2
pF
0.3
CCB
Transition frequency fT = ƒ(IC)
f = 2 GHz
VCE = parameter in V
0 4 8 12 16 20 24 mA 32
IC
2
4
6
8
10
12
14
16
18
20
22
GHz
26
fT
3 to 4V
2V
1V
0.5V
Power gain Gma, Gms, |S21|2 = ƒ (f)
VCE = 2 V, IC = 13 mA
0 2 4 6 GHz 10
f
0
5
10
15
20
25
30
35
dB
45
G
Gms
Gma
|S21|²
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Power gain Gma, Gms = ƒ (IC)
VCE = 2V
f = parameter in GHz
0 4 8 12 16 20 24 28 mA 36
IC
0
4
8
12
16
20
24
28
32
dB
40
G
0.15GHz
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
Power gain Gma, Gms = ƒ (VCE)
IC = 13 mA
f = parameter in GHz
01234V6
VCE
0
4
8
12
16
20
24
28
32
dB
40
G
0.15GHz
0.45GHz
0.9GHz
1.5GHz
1.9GHz
2.4GHz
3.5GHz
5.5GHz
10GHz
Noise figure F = ƒ(IC)
VCE = 2 V, ZS = ZSopt
0 4 8 12 16 20 24 mA 30
IC
0
0.5
1
1.5
2
2.5
3
3.5
dB
4.5
Fmin
f= 10.0 GHz
f= 5.5 GHz
f= 2.4 GHz
f= 1.8 GHz
f= 0.9 GHz
f= 0.45 GHz
Noise figure F = ƒ(IC)
VCE = 2 V, f = 2 GHz
0 4 8 12 16 mA 24
IC
0
0.5
1
1.5
2
2.5
3
dB
4
F
ZS=50Ohm
ZS=ZSopt
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Collector current IC = ƒ(VBE)
VCE =2 V
0.2 0.4 0.6 0.8 V1.2
VBE
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
mA
IC
Collector current IC = ƒ(VCE)
Parameter IB
0 1 2 3 V5
VCE
0
5
10
15
mA
25
IC
20µA
90µA
160µA
DC current gain hFE = ƒ(IC)
VCE = 2 V
10 -1 10 0 10 1 10 2
mA
IC
0
10
1
10
2
10
3
10
hFE
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Package SOT343
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Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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please contact the nearest Infineon Technologies Office (<www.infineon.com>).
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For information on the types in question, please contact the nearest Infineon
Technologies Office.
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