RIE /,\ THOMSON SEMICONDUCTEURS | mecca TPD 62 A -- 270 A-120r18 TPD 62 B -> 270 B - 12 or 18 TENTATIVE DATA TRISIL TRISIL e@ Bidirectional dual device used to tele- phone protection. @ Characteristic of stand-off and breakdown voltage similar to a Transit (Voff). @ High flowout capability because of its breakover characteristic (Vop}. Vram : 56 V> 243 V V(BO) max: 75 V> 360 V (BO) max : 300 mA ly = 120 mA with suffix 12 180 mA with suffix 18 Case : _ Boltier : TO 220 AB plastic (CB - 415) e@ Double Wspositit bidirectionnel adapt 4 la protection de ligne tlphonique. e@ Caractristique de tension de veille et de claquage similaire 4 une Transil (Vof). e Forte capacit dcoulement dd a4 sa carac- tristique de retournement (Von/. ABSOLUTE RATINGS (LIMITING VALUES} ae ovherwise specified) VALEURS LIMITES ABSOLUES D'UTILISATION (Sauf spcification contraire) Power dissipation on infinite heatsink Dissipation de puissance sur radiateur infini Tease = 75C P 15 } WwW Peak pulse current 8-20 us expo. ' 150 A Courant de crte Tt ms expo. pe 100 Non repetitive surge peak on-state current t= 20ms) 50 Courant non rptitif de surcharge crte accidentelle a I'tat | ITSM A passant t=1s 25 Critical rate of rise of on-state current Non . Vitesse critique de croissance du courant a Itat passant repetitive dirt 100 Alus Critical rate of rise of off-state voltage . Vitesse critique de croissance de la tension a Itat bloqu 67 % V(BR) min dv/dt 5 kV/us Storage and junction temperatures Ty 180 c Tempratures de jonction et de stockage Tstg ~ 40--+ 150 C Maximum lead temperature for soidering during 10 s at 4 mm from case T 3 or Temp imum de soudure des ions pendant 10 s 44 mm du boitier L 230 ~ Junction to case for DC Ren Thermal resistances Jonction boitier en continu th (j-c) 5 c/w Resistances thermiques -- Junction to ambient . Jonection ambiante | Bah fj-a) 60 c/w February 1985 - 1/3 43-45, Avenue de l'Europe - 78140 VELIZY-FRANCE - Tl. (1) 39.46.97.19 Tlex 240780F 674 TPD 62A-= 270 A-120r18 TPD62B - ~ 270B - 12 or 18 ECTRICAL CHARACTERISTICS Current-voltage characteristic = 25 ~ . IRACTERISTIQUES ELECTRIQUES OT; 26C \pp|----+ Caractristique courant-tension lA}- and-off voltage | typo) - -/4------------+-- snsion de veille RM ( ) Hi- eakdown voltage ension davalanche *(8R) Ieml- i 1 V(BR) (80) lamping voltage ension dcrtage *(BO) [ min max olding current 9 oly / ourant de maintien in-state voltage Von = 2.5Vtyp@1A ension a I'tat passant {tp = 300 ys.) r ipa @ Vem V(r) min @ lp Vip) mex (no) ing ypes (uA) (v) (Vv) (ma) (v) (mA) (mA) TPD62A -12o0r 18 2 56 62 1 82 300 TPD62B -12o0r 18 2 56 62 1 75 300 TPD68A -120r 18 2 61 68 1 90 300 TPD68B - 12 of 18 2 61 68 1 82 300 TPD75A -120r 18 2 67 75 1 100 300 TPD75B -120r 18 2 67 75 1 a1 300 TPDB2A -120r 18 2 74 82 1 109 300 TPD82B -120r 18 2 74 82 1 300 TPD9IA -120r18 2 82 n 1 121 300 TPD91B -120F 18 2 82 1 1 110 300 TPD 100A - 12 or 18 2 90 100 1 133 300 TPD 100B - 12 or 18 2 90 100 1 12) 300 TPDII0A - 12 or 18 2 99 10 j 147 300 . TPD110B - 12 or 18 2 99 110 1 133 300 12 suttin TPD120A - 12 or 18 2 108 120 1 160 300 for 120 ma TPD 120B - 12 or 18 2 108 120 1 145 300 TPD 130A - 12 of 18 2 V7 130 1 173 300 TPD 1308 - 12 or 18 2 7 130 1 157 300 ' TPD 150A - 12 or 18 2 135 150 1 200 300 | |, 18 suttix TPD 1508 - 12 or 18 2 135 150 1 181 300 for 180 ma TPD 160A - 12 or 18 2 144 160 1 213 300 TPD 1608 - 12 or 18 2 144 160 1 193 300 TPD 180A - 12-0r 18 2 162 180 ] 240 300 TPD 1808 - 12 of 18 2 162 180 1 217 300 TPD 200A - 12 or 18 2 180 200 } 267 300 TPD 2008 - 12 or 18 2 180 200 1 241 300 TPD220A - 12 or 18 2 198 220 1 293 300 TPD 2208 - 12 or 18 2 198 220 1 265 300 TPD 240A - 12 or 18 2 216 240 1 320 300 TPD 240B - 12 or 18 2 26 240 1 289 300 TPD 270A - 12 or 18 2 243 270 1 360 300 TPD270B - 12 or 18 2 243 270 325 300 CASE DESCRIPTION DESCRIPTION DU BOITIER @ 3,55 min > max 10,66 max 7 Al FOFe tHe 1 olE 5) eh Cooling method : by conduction (method C) + E Mode de refroidissement : par conduction {mode C} | 3S Marking : type number io Marquage : n de type | Weight 0/5 Masse 3 SJF . . } W Ul] |] E 1 = ALine ey : NK 5 *2 = Common Stell} |I s E *3 = 8B Line , _Y 3 Tab is connected to center pin. 2,54 2,54 2/3 123 26 THOMSON SEMICONDUCTEURS 875 TPD 62 A- 270 A-120r18 Tease (C) 0 50 100 150 200 Fig.1 - Power dissipation versus case temperature. Zth. (% Ath) 100 10 t (s) 4 001 04 4 1 10 Fig.3 - Transient thermal impedance junc- -tion-case versus pulse duration {typical values) I {A} 50 TSM 25 Number of cycles 0 1 10 100 1000 Fig.4 - Non repetitive surge peak on-state current versus number of cycles. IylT;} / IylT,=28C 1 5 Ty (C) 0 0 50 100 150 Fig.6 ~ Relative variation of holding current versus junction temperature. 200 AS THOMSON SEMICONDUCTEURS 676 TPD 62 B- 270B-12 0r18 Z (% Rep} 100 th th 10 t {s} 4 4 1 10 100 1000 Fig.2 ~- Transient thermal impedance junc- tion-amoient versus pulse duration (typical values}. I {A} 100 pt Ey | + pot 10 4 0 2 4 Fig.5 - Peak forward current versus peak forward voltage drop. (typical values!) C (pF) 10 T;=25C F=4MHz t 10 Vo {Vv} 4s0 A 1 40 100 1000 Fig.7 ~ Capacitance versus reverse applied voltage. 3/3