IPD85P04P4L-06
OptiMOS®-P2 Power-Transistor
Features
• P-channel - Logic Level - Enhancement mode
• AEC qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at Tj=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current1) IDTC=25°C,
VGS=-10V -85 A
TC=100°C,
VGS=-10V2)
-66
Pulsed drain current2) ID,pulse TC=25°C -340
Avalanche energy, single pulse2) EAS ID=-42.5A 30 mJ
Avalanche current, single pulse IAS --85 A
Gate source voltage
VGS - +5/-16 V
Power dissipation
Ptot TC=25 °C 88 W
Operating and storage temperature
Tj, Tstg - -55 ... +175 °C
IEC climatic category; DIN IEC 68-1 -
-55/175/56
Value
VDS
-40
V
RDS(on)
6.4
ID
-85
A
Product Summary
PG-TO252-3-313
Type
Package
Marking
IPD85P04P4L-06
PG-TO252-3-313
4P04L06
Gate
pin 1
Drain
pin 2/Tab
Source
pin 3
13
Tab
Rev. 1.1 page 1 2019-07-04
IPD85P04P4L-06
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics2)
Thermal resistance, junction - case
RthJC - - - 1.7 K/W
SMD version, device on PCB
RthJA minimal footprint - - 62
6 cm2 cooling area3) - - 40
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V(BR)DSS VGS=0V, ID= -1mA -40 - - V
Gate threshold voltage
VGS(th) VDS=VGS, ID=-150µA -1.2 -1.7 -2.2
Zero gate voltage drain current
IDSS
VDS=-32V, VGS=0V,
Tj=25°C
- -0.05 -1 µA
VDS=-32V, VGS=0V,
Tj=125°C2)
- -20 -200
Gate-source leakage current
IGSS VGS=-16V, VDS=0V - - -100 nA
Drain-source on-state resistance
RDS(on) VGS=-4.5V, ID=-50A -7.7 10.3 mW
VGS=-10V, ID=-85A -5.3 6.4
Values
Rev. 1.1 page 2 2019-07-04
IPD85P04P4L-06
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics2)
Input capacitance
Ciss -5060 6580 pF
Output capacitance
Coss -1520 2280
Reverse transfer capacitance
Crss -60 120
Turn-on delay time
td(on) -17 -ns
Rise time
tr-10 -
Turn-off delay time
td(off) -62 -
Fall time
tf-39 -
Gate Charge Characteristics2)
Gate to source charge
Qgs -19 25 nC
Gate to drain charge
Qgd -13 26
Gate charge total
Qg-80 104
Gate plateau voltage
Vplateau - -3.5 - V
Reverse Diode
Diode continous forward current2) IS- - -85 A
Diode pulse current2) IS,pulse - - -340
Diode forward voltage
VSD
VGS=0V, IF=-85A,
Tj=25°C
--1 -1.3 V
Reverse recovery time2) trr -56 -ns
Reverse recovery charge2) Qrr -64 -nC
2) Defined by design. Not subject to production test.
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1) Current is limited by bondwire; with an RthJC = 1.7K/W the chip is able to carry -94A at 25°C.
TC=25°C
Values
VGS=0V, VDS=-25V,
f=1MHz
VDD=-20V,
VGS=-10V, ID=-85A,
RG=3.5W
VDD=-32V, ID=-85A,
VGS=0 to -10V
VR=-20V, IF=-50A,
diF/dt=-100A/µs
Rev. 1.1 page 3 2019-07-04
IPD85P04P4L-06
1 Power dissipation 2 Drain current
Ptot = f(TC); VGS ≤ -6V ID = f(TC); VGS = -10V
3 Safe operating area 4 Max. transient thermal impedance
ID = f(VDS); TC = 25 °C; D = 0 ZthJC = f(tp)
parameter: tpparameter: D=tp/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
-ID[A]
-VDS [V]
single pulse
0.01
0.05
0.1
0.5
10-6 10-5 10-4 10-3 10-2 10-1 100
10-3
10-2
10-1
100
101
ZthJC [K/W]
tp[s]
0
20
40
60
80
100
050 100 150 200
Ptot [W]
TC[°C]
0
20
40
60
80
100
050 100 150 200
-ID[A]
TC[°C]
Rev. 1.1 page 4 2019-07-04
IPD85P04P4L-06
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
ID = f(VDS); Tj = 25 °C RDS(on) = (ID); Tj = 25 °C
parameter: -VGS parameter: -VGS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
ID = f(VGS); VDS = -6V RDS(on) = f(Tj); ID = -85 A; VGS = -10 V
parameter: Tj
4
5
6
7
8
-60 -20 20 60 100 140 180
RDS(on) [mW]
Tj[°C]
-55 °C
25 °C
175 °C
0
70
140
210
280
1.6 2.6 3.6 4.6
-ID[A]
-VGS [V]
3V
3.5V
4V
4.5V
5V
10V
0
60
120
180
240
300
360
0 2 4 6
-ID[A]
-VDS [V]
2.8V 3V 3.5V
4V
4.5V
5V
10V
5
10
15
20
25
30
35
40
020 40 60 80
RDS(on) [mW]
-ID[A]
Rev. 1.1 page 5 2019-07-04
IPD85P04P4L-06
9 Typ. gate threshold voltage 10 Typ. capacitances
VGS(th) = f(Tj); VGS = VDS C= f(VDS); VGS = 0 V; f = 1 MHz
parameter: -ID
11 Typical forward diode characteristicis 12 Drain-source breakdown voltage
IF = f(VSD)VBR(DSS) = f(Tj); ID = -1 mA
parameter: Tj
25 °C
175 °C
100
101
102
103
0 0.4 0.8 1.2 1.6
-IF[A]
-VSD [V]
Ciss
Coss
Crss
101
102
103
104
105
0 5 10 15 20 25 30
C[pF]
-VDS [V]
-150µA
-1500µA
0.5
1
1.5
2
2.5
-60 -20 20 60 100 140 180
-VGS(th) [V]
Tj[°C]
35
36
37
38
39
40
41
42
43
44
45
-60 -20 20 60 100 140 180
-VBR(DSS) [V]
Tj[°C]
Rev. 1.1 page 6 2019-07-04
IPD85P04P4L-06
13 Typ. gate charge 14 Gate charge waveforms
VGS = f(Qgate); ID = -85 A pulsed
parameter: VDD
VGS
Qgate
Qgs Qgd
Qg
VGS
Qgate
Qgs Qgd
Qg
-8V
-32V
0
1
2
3
4
5
6
7
8
9
10
030 60 90
-VGS [V]
Qgate [nC]
Rev. 1.1 page 7 2019-07-04
IPD85P04P4L-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© Infineon Technologies AG 2019
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.1 page 8 2019-07-04
IPD85P04P4L-06
Revision History
Version
1.0
1.1
Final Data Sheet
VGS changed
Date
14.03.2011
Changes
04.07.2019
Rev. 1.1 page 9 2019-07-04