© 2000 IXYS All rights reserved
Isolated backside*
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 150 V
VDGR TJ= 25°C to 150°C; RGS = 1 MW150 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C75A
IDM TC= 25°C, Note 1 3 20 A
IAR TC= 25°C80A
EAR TC= 25°C45mJ
EAS TC= 25°C 1.5 J
dv/dt IS£ IDM, di/dt £ 100 A/ms, VDD £ VDSS 5 V/ns
TJ£ 150°C, RG = 2 W
PDTC= 25°C 310 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
TL1.6 mm (0.063 in.) from case for 10 s 3 00 °C
VISOL 50/60 Hz, RMS t = 1 min 2500 V~
Weight 5 g
ISOPLUS 247TM
HiPerFETTM Power MOSFETs
ISOPLUS247TM
(Electrically Isolated Backside)
N-Channel Enhancement Mode
Avalanche Rated, Low Qg,High dv/dt
Features
lSilicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
lLow drain to tab capacitance(<30pF)
lLow RDS (on) HDMOSTM process
lRugged polysilicon gate cell structure
lRated for Unclamped Inductive Load
Switching (UIS)
lFast intrinsic Rectifier
Applications
lDC-DC converters
lBattery chargers
lSwitched-mode and resonant-mode
power supplies
lDC choppers
lAC motor control
Advantages
lEasy assembly
lSpace savings
lHigh power density
G = Gate D = Drain
S = Source
* Patent pending
E153432
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 250mA150 V
VGS(th) VDS = VGS, ID = 4mA 2.0 4.0 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C 25 mA
VGS = 0 V TJ = 125°C1 mA
RDS(on) VGS = 10 V, ID = IT22.5 mW
Notes 2, 3
Advanced Technical Information
98750 (10/00)
IXFR 80N15Q VDSS = 150 V
ID25 =75A
RDS(on) = 22.5 mW
trr £ 200ns
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = ITNotes 2, 3 35 50 S
Ciss 4600 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1400 pF
Crss 680 pF
td(on) 30 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = I T55 ns
td(off) RG = 2 W (External), Notes 2, 3 68 ns
tf20 ns
Qg(on) 180 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = IT39 nC
Notes 2, 3
Qgd 85 nC
RthJC 0.40 K/W
RthCK 0.15 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 8 0 A
ISM Repetitive; Note 1 32 0 A
VSD IF = IS, VGS = 0 V, Notes 2, 3 1.5 V
trr 200 ns
QRM 1.2 mC
IRM 10 A
IF = 50A,-di/dt = 100 A/ms, VR = 100 V
Note: 1. Pulse width limited by TJM
2. Pulse test, t £ 300 ms, duty cycle d £ 2 %
3. IT = 40A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.83 5.21 .190 .205
A12.29 2.54 .090 .100
A21.91 2.16 .075 .085
b 1.14 1.40 .045 .055
b11.91 2.13 .075 .084
b22.92 3.12 .115 .123
C 0.61 0.80 .024 .031
D 20.80 21.34 .819 .840
E 15.75 16.13 .620 .635
e 5.45 BSC .215 BSC
L 19.81 20.32 .780 .800
L1 3.81 4.32 .150 .170
Q 5.59 6.20 .220 0.244
R 4.32 4.83 .170 .190
Terminals: 1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
ISOPLUS 247TM Outline
IXFR 80N15Q
