- 1 -
Rev. 1.0, Feb. 2014
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datasheet
K4T51083QQ
K4T51163QQ
512Mb Q-die DDR2 SDRAM
60 & 84FBGA with Lead-Free & Halogen-Free
(RoHS compliant)
- 2 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Revision History
Revision No. History Draft Date Remark Editor
1.0 - First SPEC. Release. Feb. 2014 - S.H.Kim
- 3 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Table Of Contents
512Mb Q-die DDR2 SDRAM
1. Ordering Information .....................................................................................................................................................4
2. Key Features.................................................................................................................................................................4
3. Package pinout/Mechanical Dimension & Addressing..................................................................................................5
3.1 x8 Package Pinout (Top view) : 60ball FBGA Package ..........................................................................................5
3.2 x16 Package Pinout (Top view) : 84ball FBGA Package ........................................................................................6
3.3 FBGA Package Dimension (x8)...............................................................................................................................7
3.4 FBGA Package Dimension (x16).............................................................................................................................8
4. Input/Output Functional Description..............................................................................................................................9
5. DDR2 SDRAM Addressing ...........................................................................................................................................10
6. Absolute Maximum Ratings ..........................................................................................................................................11
7. AC & DC Operating Conditions.....................................................................................................................................11
7.1 Recommended DC operating Conditions (SSTL_1.8).............................................................................................11
7.2 Operating Temperature Condition ...........................................................................................................................12
7.3 Input DC Logic Level ...............................................................................................................................................12
7.4 Input AC Logic Level ...............................................................................................................................................12
7.5 AC Input Test Conditions......................................................................................................................................... 12
7.6 Differential input AC logic Level...............................................................................................................................13
7.7 Differential AC output parameters ...........................................................................................................................13
8. ODT DC electrical characteristics .................................................................................................................................13
9. OCD default characteristics ..........................................................................................................................................14
10. IDD Specification Parameters and Test Conditions....................................................................................................15
11. DDR2 SDRAM IDD Spec Table..................................................................................................................................17
12. Input/Output capacitance ............................................................................................................................................18
13. Electrical Characteristics & AC Timing for DDR2-1066/800/667 ................................................................................18
13.1 Refresh Parameters by Device Density................................................................................................................. 18
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin ................................................................18
13.3 Timing Parameters by Speed Grade ..................................................................................................................... 19
14. General notes, which may apply for all AC parameters..............................................................................................21
15. Specific Notes for dedicated AC parameters ..............................................................................................................23
- 4 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
1. Ordering Information
NOTE :
1. Speed bin is in order of CL-tRCD-tRP
2. 12digit, "B" stands for flip chip FBGA PKG.
2. Key Features
Org. DDR2-1066 7-7-7 DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 Package
64Mx8 K4T51083QQ-BCF8 K4T51083QQ-BCE7 K4T51083QQ-BCF7 K4T51083QQ-BCE6 60 FBGA
32Mx16 K4T51163QQ-BCF8 K4T51163QQ-BCE7 K4T51163QQ-BCF7 K4T51163QQ-BCE6 84 FBGA
Speed DDR2-1066 7-7-7 DDR2-800 5-5-5 DDR2-800 6-6-6 DDR2-667 5-5-5 Units
CAS Latency 7 5 6 5 tCK
tRCD(min) 13.125 12.5 15 15 ns
tRP(min) 13.125 12.5 15 15 ns
tRC(min) 58.125 57.5 60 60 ns
•JEDEC standard VDD = 1.8V ± 0.1V Power Supply
•V
DDQ = 1.8V ± 0.1V
• 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin and
533MHz fCK for 1066Mb/sec/pin
• 4 Banks
• Posted CAS
• Programmable CAS Latency: 3, 4, 5, 6, 7
• Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/Nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an
optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
-50ohm ODT
-High Temperature Self-Refresh rate enable
• Average Refresh Period for commecial temp.: 7.8us at lower than
TCASE 85C, 3.9us at 85C < TCASE < 95 C,
• All of products are Lead-Free, Halogen-Free, and RoHS compliant
The 512Mb DDR2 SDRAM is organized as a 8Mbit x16 I/Os,16Mbit x8 I/Os
4banks device. This synchronous device achieves high speed double-data-
rate transfer rates of up to 1066Mb/sec/pin (DDR2-1066) for general appli-
cations.
The chip is designed to comply with the following key DDR2 SDRAM fea-
tures such as posted CAS with additive latency, write latency = read latency
-1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
All of the control and address inputs are synchronized with a pair of exter-
nally supplied differential clocks. Inputs are latched at the crosspoint of dif-
ferential clocks (CK rising and CK falling). All I/Os are synchronized with a
pair of bidirectional strobes (DQS and DQS) in a source synchronous fash-
ion. The address bus is used to convey row, column, and bank address
information in a RAS/CAS multiplexing style. For example, 512Mb(x8)
device receive 14/10/2 addressing.
The 512Mb DDR2 device operates with a single 1.8V ± 0.1V power supply
and 1.8V ± 0.1V VDDQ.
The 512Mb DDR2 device is available in 60ball FBGAs(x4/x8) and in 84ball
FBGAs(x16)
NOTE :
1. This data sheet is an abstract of full DDR2 specification and does not cover the common features which are described in “DDR2 SDRAM Device Operation & Timing Dia-
gram”.
2. The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.
- 5 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
3. Package pinout/Mechanical Dimension & Addressing
3.1 x8 Package Pinout (Top view) : 60ball FBGA Package
NOTE :
1. Pins B3 and A2 have identical capacitance as pins B7 and A8.
2. For a read, when enabled, strobe pair RDQS & RDQS are identical in function and timing to strobe pair DQS & DQS and input masking function is disabled.
3. The function of DM or RDQS/RDQS are enabled by EMRS command.
A
B
C
D
E
F
G
H
J
K
L
VDD
NU/ VSS
DQ6 VSSQ
VDDQ
VDDQ
VDDQ
VSSQ
VSSQ DQS
DQS DQ7
DQ0VDDQ
DQ2 VSSQ DQ5
VSS VDD
CK
RAS CK
CAS CS
A2
A6 A4
A11 A8
NC A13NCA12
A9
A7
A5
A0
VDD
A10/AP
VSS
VDDQ
VSSQ
DQ1
DQ3
DQ4
VDD
A1
A3
BA1
VREF VSS
CKE WE
BA0
VDD
VSS
DM/
RDQS
RDQS
NC
ODT
123 789
Ball Locations (x8)
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123456789
A
B
C
D
E
F
G
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K
L
: Populated Ball
+: Depopulated Ball
Top View
(See the als through the package)
- 6 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
3.2 x16 Package Pinout (Top view) : 84ball FBGA Package
NOTE :
1. In case of only 8 DQs out of 16 DQs are used, LDQS, LDQSB and DQ0~7 must be used.
2. A12 ball is only for MRS and EMRS mode setting.
A
B
C
D
E
F
G
H
J
K
L
VDD NC VSS
DQ6 VSSQ LDM
VDDQ
VDDQ
VDDQ
VSSQ
VSSQ LDQS
LDQS DQ7
DQ0
VDDQ
DQ2 VSSQ DQ5
VSS VDD
CK
RAS CK
CAS CS
A2
A6 A4
A11 A8
NC NCNCA12
A9
A7
A5
A0
VDD
A10/AP
VSS
VDDQ
VSSQ
DQ1
DQ3DQ4
VDD
A1
A3
BA1
VREF VSS
CKE WE
BA0
VDD
VSS
VDD NC VSS
DQ14 VSSQ UDM
VDDQ VDDQ
VSSQ
DQ9
DQ11DQ12
VDDQ
VDDQ
VSSQ
VSSQ UDQS
UDQS DQ15
DQ8
VDDQ
DQ10 VSSQ DQ13
NC
ODT
M
N
P
R
12 3 7 8 9
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: Populated Ball
+: Depopulated Ball
Top View
Ball Locations (x16)
(See the balls through the Package)
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- 7 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
3.3 FBGA Package Dimension (x8)
9.50 ± 0.10
7.50 ± 0.10
#A1
0.37±0.05
0.9±0.1
(0.30)
# A1 INDEX MARK
(0.60)
9.50 ± 0.10
0.80 x 10 = 8.00
0.80
7.50 ± 0.10
1.60
0.80 x 8 = 6. 40
4.00
0.80
A
B
A
B
C
D
E
F
H
J
K
L
G
0.10MAX
3.20
0.80
987654321
60-0.48 Solder ball
0.2 MAB
(Post reflow 0.50 0.05)
MOLDING AREA
(Datum A)
(Datum B)
Units : Millimeters
BOTTOM VIEW
TOP VIEW
- 8 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
3.4 FBGA Package Dimension (x16)
12.50 ± 0.10
7.50 ± 0.10
#A1
0.37±0.05
0.9±0.1
(0.30)
# A1 INDEX MARK
(0.60)
12.50 ± 0.10
0.80 x 14 = 11.20
0.80
7.50 ± 0.10
1.60
0.80 x 8 = 6. 40
5.60
0.80
A
B
A
B
C
D
E
F
H
J
K
L
G
0.10MAX
3.20
0.80
987654321
84-0.48 Solder ball
0.2 MAB
(Post reflow 0.50 0.05)
MOLDING AREA
(Datum A)
(Datum B)
M
N
P
R
Units : Millimeters
BOTTOM VIEW
TOP VIEW
- 9 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
4. Input/Output Functional Description
Symbol Type Function
CK, CK Input
Clock: CK and CK are differential clock inputs. All address and control input signals are sampled on the crossing of the
positive edge of CK and negative edge of CK. Output (read) data is referenced to the crossings of CK and CK (both
directions of crossing).
CKE Input
Clock Enable: CKE HIGH activates, and CKE Low deactivates, internal clock signals and device input buffers and out-
put drivers. Taking CKE Low provides Precharge Power-Down and Self Refresh operation (all banks idle), or Active
Power-Down (row Active in any bank). CKE is synchronous for power down entry and exit, and for self refresh entry.
CKE is asynchronous for self refresh exit. After VREF has become stable during the power on and initialization
swquence, it must be maintained for proper operation of the CKE receiver. For proper self-refresh entry and exit, VREF
must be maintained to this input. CKE must be maintained high throughout read and write accesses. Input buffers,
excluding CK, CK, ODT and CKE are disabled during power-down. Input buffers, excluding CKE, are disabled during
self refresh.
CS Input Chip Select: All commands are masked when CS is registered HIGH. CS provides for external Rank selection on sys-
tems with multiple Ranks. CS is considered part of the command code.
ODT Input
On Die Termination: ODT (registered HIGH) enables termination resistance internal to the DDR2 SDRAM. When
enabled, ODT is only applied to each DQ, DQS, DQS, RDQS, RDQS, and DM signal for x4/x8 configurations. For x16
configuration, ODT is applied to each DQ, UDQS/UDQS, LDQS/LDQS, UDM, and LDM signal. The ODT pin will be
ignored if the Extended Mode Register Set(EMRS) is programmed to disable ODT.
RAS, CAS, WE Input Command Inputs: RAS, CAS and WE (along with CS) define the command being entered.
DM
(UDM), (LDM) Input
Input Data Mask: DM is an input mask signal for write data. Input data is masked when DM is sampled HIGH coinci-
dent with that input data during a Write access. DM is sampled on both edges of DQS. Although DM pins are input only,
the DM loading matches the DQ and DQS loading. For x8 device, the function of DM or RDQS/RDQS is enabled by
EMRS command.
BA0 - BA1 Input
Bank Address Inputs: BA0, BA1 and BA2 define to which bank an Active, Read, Write or Precharge command is
being applied. Bank address also determines if the mode register or extended mode register is to be accessed during a
MRS or EMRS cycle.
A0 - A13 Input
Address Inputs: Provided the row address for Active commands and the column address and Auto Precharge bit for
Read/Write commands to select one location out of the memory array in the respective bank. A10 is sampled during a
Precharge command to determine whether the Precharge applies to one bank (A10 LOW) or all banks (A10 HIGH). If
only one bank is to be precharged, the bank is selected by BA0, BA1 and BA2. The address inputs also provide the op-
code during Mode Register Set commands.
DQ Input/Output Data Input/ Output: Bi-directional data bus.
DQS, (DQS)
(LDQS), (LDQS)
(UDQS), (UDQS)
(RDQS), (RDQS)
Input/Output
Data Strobe: Output with read data, input with write data. Edge-aligned with read data, centered in write data. For the
x16, LDQS corresponds to the data on DQ0-DQ7; UDQS corresponds to the data on DQ8-DQ15. For the x8, an RDQS
option using DM pin can be enabled via the EMRS(1) to simplify read timing. The data strobes DQS, LDQS, UDQS,
and RDQS may be used in single ended mode or paired with optional complementary signals DQS, LDQS, UDQS, and
RDQS to provide differential pair signaling to the system during both reads and writes. A control bit at EMRS(1)[A10]
enables or disables all complementary data strobe signals.
In this data sheet, "differential DQS signals" refers to any of the following with A10 = 0 of EMRS(1)
x4 DQS/DQS
x8 DQS/DQS if EMRS(1)[A11] = 0
x8 DQS/DQS, RDQS/RDQS, if EMRS(1)[A11] = 1
x16 LDQS/LDQS and UDQS/UDQS
"single-ended DQS signals" refers to any of the following with A10 = 1 of EMRS(1)
x4 DQS
x8 DQS if EMRS(1) [A11] = 0
x8 DQS, RDQS, if EMRS(1) [A11] = 1
x16 LDQS and UDQS
NC No Connect : No internal electrical connection is present.
VDD/VDDQ Supply Power Supply : 1.8V +/- 0.1V, DQ Power Supply : 1.8V +/- 0.1V
VSS/VSSQ Supply Ground, DQ Ground
VDDL Supply DLL Power Supply : 1.8V +/- 0.1V
VSSDL Supply DLL Ground
VREF Supply Reference voltage
- 10 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
5. DDR2 SDRAM Addressing
512Mb
* Reference information: The following tables are address mapping information for other densities.
256Mb
1Gb
2Gb
4Gb
Configuration 128Mb x4 64Mb x 8 32Mb x16
# of Bank 4 4 4
Bank Address BA0,BA1 BA0,BA1 BA0,BA1
Auto precharge A10/AP A10/AP A10/AP
Row Address A0 ~ A13 A0 ~ A13 A0 ~ A12
Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A9
Configuration 64Mb x4 32Mb x 8 16Mb x16
# of Bank 4 4 4
Bank Address BA0,BA1 BA0,BA1 BA0,BA1
Auto precharge A10/AP A10/AP A10/AP
Row Address A0 ~ A12 A0 ~ A12 A0 ~ A12
Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A8
Configuration 256Mb x4 128Mb x 8 64Mb x16
# of Bank 8 8 8
Bank Address BA0 ~ BA2 BA0 ~ BA2 BA0 ~ BA2
Auto precharge A10/AP A10/AP A10/AP
Row Address A0 ~ A13 A0 ~ A13 A0 ~ A12
Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A9
Configuration 512Mb x4 256Mb x 8 128Mb x16
# of Bank 8 8 8
Bank Address BA0 ~ BA2 BA0 ~ BA2 BA0 ~ BA2
Auto precharge A10/AP A10/AP A10/AP
Row Address A0 ~ A14 A0 ~ A14 A0 ~ A13
Column Address A0 ~ A9,A11 A0 ~ A9 A0 ~ A9
Configuration 1 Gb x4 512Mb x 8 256Mb x16
# of Bank 8 8 8
Bank Address BA0 ~ BA2 BA0 ~ BA2 BA0 ~ BA2
Auto precharge A10/AP A10/AP A10/AP
Row Address A0 - A15 A0 - A15 A0 - A14
Column Address A0 - A9,A11 A0 - A9 A0 - A9
- 11 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
6. Absolute Maximum Ratings
NOTE :
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions
for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREF must be not greater than 0.6 x VDDQ. When VDD and VDDQ and VDDL are less than 500mV, VREF
may be equal to or less than 300mV.
4. Voltage on any input or I/O may not exceed voltage on VDDQ.
7. AC & DC Operating Conditions
7.1 Recommended DC operating Conditions (SSTL_1.8)
NOTE : There is no specific device VDD supply voltage requirement for SSTL-1.8 compliance. However under all conditions VDDQ must be less than or equal to VDD.
1. The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically the value of VREF is expected to be about 0.5 x VDDQ of the transmitting
device and VREF is expected to track variations in VDDQ.
2. Peak to peak AC noise on VREF may not exceed +/-2% VREF(DC).
3. VTT of transmitting device must track VREF of receiving device.
4. AC parameters are measured with VDD, VDDQ and VDDL tied together.
Symbol Parameter Rating Units NOTE
VDD Voltage on VDD pin relative to VSS - 1.0 V ~ 2.3 V V 1
VDDQ Voltage on VDDQ pin relative to VSS - 0.5 V ~ 2.3 V V 1
VDDL Voltage on VDDL pin relative to VSS - 0.5 V ~ 2.3 V V 1
VIN, VOUT Voltage on any pin relative to VSS - 0.5 V ~ 2.3 V V 1
TSTG Storage Temperature -55 to +100 C 1, 2
Symbol Parameter Rating Units NOTE
Min. Typ. Max.
VDD Supply Voltage 1.7 1.8 1.9 V
VDDL Supply Voltage for DLL 1.7 1.8 1.9 V 4
VDDQ Supply Voltage for Output 1.7 1.8 1.9 V 4
VREF Input Reference Voltage 0.49*VDDQ 0.50*VDDQ 0.51*VDDQ mV 1,2
VTT Termination Voltage VREF-0.04 VREF VREF+0.04 V 3
- 12 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
7.2 Operating Temperature Condition
NOTE :
1. Operating Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement conditions, please refer to JESD51.2 standard.
2. At 85 - 95 C operation temperature range, doubling refresh commands in frequency to a 32ms period ( tREFI=3.9 us ) is required, and to enter to self refresh mode at this
temperature range, an EMRS command is required to change internal refresh rate.
7.3 Input DC Logic Level
Symbol Parameter Min. Max. Units NOTE
VIH(DC) DC input logic high VREF + 0.125 VDDQ + 0.3 V
VIL(DC) DC input logic low - 0.3 VREF - 0.125 V
7.4 Input AC Logic Level
Symbol Parameter DDR2-667, DDR2-800 DDR2-1066 Units
Min. Max. Min. Max.
VIH (AC) AC input logic high VREF + 0.200 VDDQ + VPEAK VREF + 0.200 - V
VIL (AC) AC input logic low VSSQ - VPEAK VREF - 0.200 - VREF - 0.200 V
NOTE :
1. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak ampli-
tude allowed for overshoot and undershoot.
7.5 AC Input Test Conditions
NOTE :
1. Input waveform timing is referenced to the input signal crossing through the VIH/IL(AC) level applied to the device under test.
2. The input signal minimum slew rate is to be maintained over the range from VREF to VIH(AC) min for rising edges and the range from VREF to VIL(AC) max for falling edges as
shown in the below figure.
3. AC timings are referenced with input waveforms switching from VIL(AC) to VIH(AC) on the positive transitions and VIH(AC) to VIL(AC) on the negative transitions.
Figure 1. AC Input Test Signal Waveform
Symbol Parameter Rating Units NOTE
TOPER Operating Temperature 0 to 95 C 1, 2
Symbol Condition Value Units NOTE
VREF Input reference voltage 0.5 * VDDQ V1
VSWING(MAX) Input signal maximum peak to peak swing 1.0 V 1
SLEW Input signal minimum slew rate 1.0 V/ns 2, 3
VIH(AC) min
VIH(DC) min
VREF
VIL(DC) max
VIL(AC) max
VSS
delta TRdelta TF
VREF - VIL(AC) max
delta TF
Falling Slew = Rising Slew =
VIH(AC) min - VREF
delta TR
- 13 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
7.6 Differential input AC logic Level
Symbol Parameter Min. Max. Units NOTE
VID(AC) AC differential input voltage 0.5 VDDQ V 1
VIX(AC) AC differential cross point voltage 0.5 * VDDQ - 0.175 0.5 * VDDQ + 0.175 V 2
NOTE :
1. VID(AC) specifies the input differential voltage |VTR -VCP | required for switching, where VTR is the true input signal (such as CK, DQS, LDQS or UDQS) and VCP is the com-
plementary input signal (such as CK, DQS, LDQS or UDQS). The minimum value is equal to VIH (AC) - VIL(AC).
2. The typical value of VIX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VIX(AC) is expected to track variations in VDDQ . VIX(AC) indicates the voltage
at which differential input signals must cross.
3. For information related to VPEAK value, Refer to overshoot/undershoot specification in device operation and timing datasheet; maximum peak amplitude allowed for over-
shoot and undershoot.
Figure 2. Differential signal levels
7.7 Differential AC output parameters
Symbol Parameter Min. Max. Units NOTE
VOX(AC) AC differential cross point voltage 0.5 * VDDQ - 0.125 0.5 * VDDQ + 0.125 V 1
NOTE :
1. The typical value of VOX(AC) is expected to be about 0.5 * VDDQ of the transmitting device and VOX(AC) is expected to track variations in VDDQ . VOX(AC) indicates the volt-
age at which differential output signals must cross.
8. ODT DC electrical characteristics
NOTE : Test condition for Rtt measurements
Measurement Definition for Rtt(eff): Apply VIH (AC) and VIL (AC) to test pin separately, then measure current I(VIH (AC)) and I( VIL (AC)) respectively. VIH (AC), VIL
(AC)(DC), and VDDQ values defined in SSTL_18
Rtt(eff) =
VIH (AC) - VIL (AC)
I(VIH (AC)) - I(VIL (AC))
delta VM =
2 x VM
VDDQ
x 100%
- 1
Measurement Definition for VM: Measure voltage (VM) at test pin (midpoint) with no load.
PARAMETER/CONDITION SYMBOL MIN NOM MAX UNITS NOTE
Rtt effective impedance value for EMRS(A6,A2)=0,1; 75 ohm Rtt1(eff) 60 75 90 ohm 1
Rtt effective impedance value for EMRS(A6,A2)=1,0; 150 ohm Rtt2(eff) 120 150 180 ohm 1
Rtt effective impedance value for EMRS(A6,A2)=1,1; 50 ohm Rtt3(eff) 40 50 60 ohm 1
Deviation of VM with respect to VDDQ/2 delta VM - 6 + 6 % 1
VDDQ
Crossing point
VSSQ
VTR
VCP
VID
VIX or VOX
- 14 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
9. OCD default characteristics
NOTE :
1. Absolute Specifications (0°C TCASE +95°C; VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V)
2. Impedance measurement condition for output source DC current: VDDQ = 1.7V; VOUT = 1420mV; (VOUT-VDDQ)/Ioh must be less than 23.4 ohms for values of VOUT between
VDDQ and VDDQ- 280mV. Impedance measurement condition for output sink dc current: VDDQ = 1.7V; VOUT = 280mV; VOUT/Iol must be less than 23.4 ohms for values of
VOUT between 0V and 280mV.
3. Mismatch is absolute value between pull-up and pull-down, both are measured at same temperature and voltage.
4. Slew rate measured from VIL(AC) to VIH(AC).
5. The absolute value of the slew rate as measured from DC to DC is equal to or greater than the slew rate as measured from AC to AC. This is guaranteed by design and char-
acterization.
6. This represents the step size when the OCD is near 18 ohms at nominal conditions across all process and represents only the DRAM uncertainty.
Output slew rate load :
7. DRAM output slew rate specification applies to 667Mb/sec/pin and 800Mb/sec/pin speed bins.
8. Timing skew due to DRAM output slew rate mismatch between DQS / DQS and associated DQ is included in tDQSQ and tQHS specification.
Description Parameter Min Nom Max Unit NOTE
Output impedance
18ohm at norminal condition
See full strength default driver characteristics
on device operation specification
ohm 1,2
Output impedance step size for OCD calibration 0 1.5 ohm 6
Pull-up and pull-down mismatch 0 4 ohm 1,2,3
Output slew rate Sout 1.5 5 V/ns 1,4,5,6,7,8
25 ohm
VTT
Output
(VOUT)
Reference
Point
- 15 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
10. IDD Specification Parameters and Test Conditions
(IDD values are for full operating range of Voltage and Temperature, Notes 1 - 5)
Symbol Proposed Conditions Units NOTE
IDD0
Operating one bank active-precharge current;
tCK = tCK(IDD), tRC = tRC(IDD), tRAS = tRASmin(IDD); CKE is HIGH, CS is HIGH between valid commands;
Address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD1
Operating one bank active-read-precharge current;
IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRC = tRC (IDD), tRAS = tRASmin(IDD), tRCD =
tRCD(IDD); CKE is HIGH, CS is HIGH between valid commands; Address businputs are SWITCHING; Data pattern
is same as IDD4W
mA
IDD2P
Precharge power-down current;
All banks idle; tCK = tCK(IDD); CKE is LOW; Other control and address bus inputs are STABLE; Data bus inputs are
FLOATING
mA
IDD2Q
Precharge quiet standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputsare STABLE; Data
bus inputs are FLOATING
mA
IDD2N
Precharge standby current;
All banks idle; tCK = tCK(IDD); CKE is HIGH, CS is HIGH; Other control and address bus inputs are SWITCHING;
Data bus inputs are SWITCHING
mA
IDD3P
Active power-down current;
All banks open; tCK = tCK(IDD); CKE is LOW; Other control and address bus
inputs are STABLE; Data bus inputs are FLOATING
Fast PDN Exit MRS(12) = 0 mA
Slow PDN Exit MRS(12) = 1 mA
IDD3N
Active standby current;
All banks open; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid
commands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD4W
Operating burst write current;
All banks open, Continuous burst writes; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS = tRASmax(IDD), tRP
= tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are SWITCHING; Data bus
inputs are SWITCHING
mA
IDD4R
Operating burst read current;
All banks open, Continuous burst reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = 0; tCK = tCK(IDD), tRAS =
tRASmax(IDD), tRP = tRP(IDD); CKE is HIGH, CS is HIGH between valid commands; Address bus inputs are
SWITCHING; Data pattern is same as IDD4W
mA
IDD5B
Burst auto refresh current;
tCK = tCK(IDD); Refresh command at every tRFC(IDD) interval; CKE is HIGH, CS is HIGH between valid com-
mands; Other control and address bus inputs are SWITCHING; Data bus inputs are SWITCHING
mA
IDD6
Self refresh current;
CK and CK at 0V; CKE 0.2V; Other control and address bus inputs are
FLOATING; Data bus inputs are FLOATING
Normal mA
Low Power mA
IDD7
Operating bank interleave read current;
All bank interleaving reads, IOUT = 0mA; BL = 4, CL = CL(IDD), AL = tRCD(IDD)-1*tCK(IDD); tCK = tCK(IDD), tRC
= tRC(IDD), tRRD = tRRD(IDD), tFAW = tFAW(IDD), tRCD = 1*tCK(IDD); CKE is HIGH, CS is HIGH between valid
commands; Address bus inputs are STABLE during DESELECTs; Data pattern is same as IDD4R; Refer to the fol-
lowing page for detailed timing conditions
mA
- 16 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
NOTE :
1. IDD specifications are tested after the device is properly initialized
2. Input slew rate is specified by AC Parametric Test Condition
3. IDD parameters are specified with ODT disabled.
4. Data bus consists of DQ, DM, DQS, DQS, RDQS, RDQS, LDQS, LDQS, UDQS, and UDQS. IDD values must be met with all combinations of EMRS bits 10 and 11.
5. Definitions for IDD
LOW is defined as VIN VIL(AC)max
HIGH is defined as VIN VIH(AC)min
STABLE is defined as inputs stable at a HIGH or LOW level
FLOATING is defined as inputs at VREF = VDDQ/2
SWITCHING is defined as:
inputs changing between HIGH and LOW every other clock cycle (once per two clocks) for address and control
signals, and
inputs changing between HIGH and LOW every other data transfer (once per clock) for DQ signals not including
masks or strobes.
For purposes of IDD testing, the following parameters are utilized
Detailed IDD7
The detailed timings are shown below for IDD7.
Legend: A = Active; RA = Read with Autoprecharge; D = Deselect
IDD7: Operating Current: All Bank Interleave Read operation
All banks are being interleaved at minimum tRC(IDD) without violating tRRD(IDD) and tFAW(IDD) using a burst length of 4. Control and address bus inputs are STABLE during
DESELECTs. IOUT = 0mA
Timing Patterns for 4 bank devices x4/ x8/ x16
-DDR2-667 5/5/5
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D
-DDR2-800 6/6/6
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D D
-DDR2-800 5/5/5
A0 RA0 D D A1 RA1 D D A2 RA2 D D A3 RA3 D D D D D D D D D
-DDR2-1066 7/7/7
A0 RA0 D D D D A1 RA1 D D D D A2 RA2 D D D D A3 RA3 D D D D D D D D D D D
DDR2-1066 DDR2-800 DDR2-800 DDR2-667 Units
Parameter 7-7-7 5-5-5 6-6-6 5-5-5
CL(IDD) 7 5 6 5 tCK
tRCD(IDD) 13.125 12.5 15 15 ns
tRC(IDD) 58.125 57.5 60 60 ns
tRRD(IDD)-x4/x8 7.5 7.5 7.5 7.5 ns
tRRD(IDD)-x16 10 10 10 10 ns
tCK(IDD) 1.875 2.5 2.5 3 ns
tRASmin(IDD) 45 45 45 45 ns
tRP(IDD) 13.125 12.5 15 15 ns
tRFC(IDD) 105 105 105 105 ns
- 17 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
11. DDR2 SDRAM IDD Spec Table
Symbol
64Mx8 (K4T51083QQ)
Unit NOTE1066@CL=7 800@CL=5 800@CL=6 667@CL=5
CF8 CE7 CF7 CE6
IDD0 45 37 37 35 mA
IDD1 50 45 45 40 mA
IDD2P 8 8 8 8 mA
IDD2Q 20 20 20 19 mA
IDD2N 25 25 25 22 mA
IDD3P-F 20 20 20 18 mA
IDD3P-S 12 12 12 12 mA
IDD3N 35 30 30 30 mA
IDD4W 75 60 60 55 mA
IDD4R 85 70 70 65 mA
IDD5 75 70 70 67 mA
IDD6 8 8 8 8 mA
IDD7 100 90 90 80 mA
Symbol
32Mx16 (K4T51163QQ)
Unit NOTE1066@CL=7 800@CL=5 800@CL=6 667@CL=5
CF8 CE7 CF7 CE6
IDD0 50 45 45 40 mA
IDD1 60 55 55 50 mA
IDD2P 8 8 8 8 mA
IDD2Q 20 20 20 20 mA
IDD2N 25 25 25 23 mA
IDD3P-F 20 20 20 20 mA
IDD3P-S 12 12 12 12 mA
IDD3N 40 35 35 35 mA
IDD4W 90 80 80 75 mA
IDD4R 120 90 90 90 mA
IDD5 75 70 70 70 mA
IDD6 8 8 8 8 mA
IDD7 150 130 130 115 mA
- 18 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
12. Input/Output capacitance
13. Electrical Characteristics & AC Timing for DDR2-1066/800/667
(0 C < TOPER < 95 C; VDDQ = 1.8V + 0.1V; VDD = 1.8V + 0.1V)
13.1 Refresh Parameters by Device Density
13.2 Speed Bins and CL, tRCD, tRP, tRC and tRAS for Corresponding Bin
Parameter Symbol DDR2-667 DDR2-800 DDR2-1066 Units
Min Max Min Max Min Max
Input capacitance, CK and CK CCK 1.0 2.0 1.0 2.0 1.0 2.0 pF
Input capacitance delta, CK and CK CDCK x 0.25 x 0.25 x 0.25 pF
Input capacitance, all other input-only pins CI 1.0 2.0 1.0 1.75 1.0 1.75 pF
Input capacitance delta, all other input-only pins CDI x 0.25 x 0.25 x 0.25 pF
Input/output capacitance, DQ, DM, DQS, DQS CIO 2.5 3.5 2.5 3.5 2.5 3.5 pF
Input/output capacitance delta, DQ, DM, DQS, DQS CDIO x 0.5 x 0.5 x 0.5 pF
Parameter Symbol 256Mb 512Mb 1Gb 2Gb 4Gb Units
Refresh to active/Refresh command time tRFC 75 105 127.5 195 327.5 ns
Average periodic refresh interval tREFI 0CTCASE 85C 7.8 7.8 7.8 7.8 7.8 s
85CTCASE 95C 3.9 3.9 3.9 3.9 3.9 s
Speed DDR2-1066(F8) DDR2-800(E7) DDR2-800(F7) DDR2-667(E6)
UnitsBin (CL - tRCD - tRP) 7-7-7 5-5-5 6-6-6 5 - 5 - 5
Parameter min max min max min max min max
tCK, CL=3 - - 5 8 - - 5 8 ns
tCK, CL=4 3.75 7.5 3.75 8 3.75 8 3.75 8 ns
tCK, CL=5 3 7.5 2.5 8 3 8 3 8 ns
tCK, CL=6 2.5 7.5 - - 2.5 8 - - ns
tCK, CL=7 1.875 7.5 - - - - - - ns
tRCD 13.125 - 12.5 - 15 - 15 - ns
tRP 13.125 - 12.5 - 15 - 15 - ns
tRC 58.125 - 57.5 - 60 - 60 - ns
tRAS 45 70000 45 70000 45 70000 45 70000 ns
- 19 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
13.3 Timing Parameters by Speed Grade
(For information related to the entries in this table, refer to both the general notes and the specific notes following this table.)
Parameter Symbol DDR2-1066 DDR2-800 DDR2-667 Units NOTE
min max min max min max
DQ output access time from CK/CK tAC - 350 350 -400 400 -450 450 ps 40
DQS output access time from CK/CK tDQSCK - 300 300 -350 350 -400 400 ps 40
Average clock HIGH pulse width tCH(avg) 0.48 0.52 0.48 0.52 0.48 0.52 tCK(avg) 35,36
Average clock LOW pulse width tCL(avg) 0.48 0.52 0.48 0.52 0.48 0.52 tCK(avg) 35,36
CK half pulse period tHP min(tCL,tC
H) x
Min(tCL(ab
s),
tCH(abs))
x
Min(tCL(ab
s),
tCH(abs))
xps 37
Average clock period tCK(avg) 1875 7500 2500 8000 3000 8000 ps 35,36
DQ and DM input hold time tDH(base) 75 x 125 x 175 x ps 6,7,8,21
,28,31
DQ and DM input setup time tDS(base) 0 x 50 x 100 x ps 6,7,8,20
,28,31
Control & Address input pulse width for each input tIPW 0.6 x 0.6 x 0.6 x tCK(avg)
DQ and DM input pulse width for each input tDIPW 0.35 x 0.35 x 0.35 x tCK(avg)
Data-out high-impedance time from CK/CK tHZ x tAC max x tAC(max) x tAC(max) ps 18,40
DQS/DQS low-impedance time from CK/CK tLZ(DQS) tAC min tAC max tAC(min) tAC(max) tAC(min) tAC(max) ps 18,40
DQ low-impedance time from CK/CK tLZ(DQ) 2* tAC min tAC max 2* tAC(min) tAC(max) 2* tAC(min) tAC(max) ps 18,40
DQS-DQ skew for DQS and associated DQ signals tDQSQ x 175 x 200 x 240 ps 13
DQ hold skew factor tQHS x 250 x 300 x 340 ps 38
DQ/DQS output hold time from DQS tQH tHP - tQHS x tHP - tQHS x tHP - tQHS x ps 39
DQS latching rising transitions to associated clock edges tDQSS - 0.25 0.25 - 0.25 0.25 -0.25 0.25 tCK(avg) 30
DQS input HIGH pulse width tDQSH 0.35 x 0.35 x 0.35 x tCK(avg)
DQS input LOW pulse width tDQSL 0.35 x 0.35 x 0.35 x tCK(avg)
DQS falling edge to CK setup time tDSS 0.2 x 0.2 x 0.2 x tCK(avg) 30
DQS falling edge hold time from CK tDSH 0.2 x 0.2 x 0.2 x tCK(avg) 30
Mode register set command cycle time tMRD 2x2 x 2 x nCK
MRS command to ODT update delay tMOD 0 12 0 12 0 12 ns 32
Write postamble tWPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK(avg) 10
Write preamble tWPRE 0.35 x 0.35 x 0.35 x tCK(avg)
Address and control input hold time tIH(base) 200 x 250 x 275 x ps 5,7,9,23
,29
Address and control input setup time tIS(base) 125 x 175 x 200 x ps 5,7,9,22
,29
Read preamble tRPRE 0.9 1.1 0.9 1.1 0.9 1.1 tCK(avg) 19,41
Read postamble tRPST 0.4 0.6 0.4 0.6 0.4 0.6 tCK(avg) 19,42
Activate to activate command period for 1KB page size products tRRD 7.5 x 7.5 x 7.5 x ns 4,32
Activate to activate command period for 2KB page size products tRRD 10 x 10 x 10 x ns 4,32
- 20 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Parameter Symbol DDR2-1066 DDR2-800 DDR2-667 Units NOTE
min max min max min max
Four Activate Window for 1KB page size products tFAW 35 x35x 37.5 x ns 32
Four Activate Window for 2KB page size products tFAW 45 x45x 50 x ns 32
CAS to CAS command delay tCCD 2 x 2 x 2 x nCK
Write recovery time tWR 15 x 15 x 15 x ns 32
Auto precharge write recovery + precharge time tDAL WR+tRP x WR + tnRP x WR + tnRP x nCK 33
Internal write to read command delay tWTR 7.5 x 7.5 x 7.5 x ns 24,32
Internal read to precharge command delay tRTP 7.5 x 7.5 x 7.5 x ns 3,32
Exit self refresh to a non-read command tXSNR tRFC + 10 x tRFC + 10 x tRFC + 10 x ns 32
Exit self refresh to a read command tXSRD 200 x 200 x 200 x nCK
Exit precharge power down to any command tXP 3 x 2 x 2 x nCK
Exit active power down to read command tXARD 3 x 2 x 2 x nCK 1
Exit active power down to read command
(slow exit, lower power) tXARDS 10 - AL x 8 - AL x 7 - AL x nCK 1,2
CKE minimum pulse width (HIGH and LOW pulse width) tCKE 3 x 3 x 3 x nCK 27
ODT turn-on delay tAOND 2 2 2 2 2 2 nCK 16
ODT turn-on tAON tAC(min) tAC(max) +
2.575 tAC(min) tAC(max)+
0.7 tAC(min) tAC(max)+
0.7 ns 6,16,40
ODT turn-on (Power-Down mode) tAONPD tAC(min)+2
3*tCK +
tAC(max)+
1
tAC(min)+2
2*tCK(avg)
+tAC(max)
+1
tAC(min)+2
2*tCK(avg)
+tAC(max)
+1
ns
ODT turn-off delay tAOFD 2.5 2.5 2.5 2.5 2.5 2.5 nCK 17,45
ODT turn-off tAOF tAC(min) tAC(max)+
0.6 tAC(min) tAC(max)+
0.6 tAC(min) tAC(max)+
0.6 ns 17,43,4
5
ODT turn-off (Power-Down mode) tAOFPD tAC(min)+2
2.5*tCK +
tAC(max)+
1
tAC(min)+2
2.5*tCK(av
g)+tAC(ma
x)+1
tAC(min)+2
2.5*tCK(av
g)+tAC(ma
x)+1
ns
ODT to power down entry latency tANPD 4 x 3 x3x nCK
ODT power down exit latency tAXPD 11 x 8 x8x nCK
OCD drive mode output delay tOIT 0 12 0 12 0 12 ns 32
Minimum time clocks remains ON after CKE asynchronously
drops LOW tDelay tIS+tCK
+tIH x
tIS+tCK(av
g)
+tIH
x
tIS+tCK(av
g)
+tIH
xns15
- 21 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
14. General notes, which may apply for all AC parameters
1. DDR2 SDRAM AC timing reference load
Figure 3 represents the timing reference load used in defining the relevant timing parameters of the part. It is not intended to be either a precise repre
sentation of the typical system environment or a depiction of the actual load presented by a production tester. System designers will use IBIS or other sim-
ulation tools to correlate the timing reference load to a system environment. Manufacturers will correlate to their production test conditions (generally a
coaxial transmission line terminated at the tester electronics).
Figure 3. AC Timing Reference Load
The output timing reference voltage level for single ended signals is the crosspoint with VTT. The output timing reference voltage level for differential sig-
nals is the crosspoint of the true (e.g. DQS) and the complement (e.g. DQS) signal.
2. Slew Rate Measurement Levels
a) Output slew rate for falling and rising edges is measured between VTT - 250 mV and VTT + 250 mV for single ended signals. For differential signals
(e.g. DQS - DQS) output slew rate is measured between DQS - DQS = - 500 mV and DQS - DQS = + 500 mV. Output slew rate is guaranteed by
design, but is not necessarily tested on each device.
b) Input slew rate for single ended signals is measured from VREF(DC) to VIH(AC),min for rising edges and from VREF(DC) to VIL(AC),max for falling
edges. For differential signals (e.g. CK - CK) slew rate for rising edges is measured from CK - CK = - 250 mV to CK - CK = + 500 mV (+ 250 mV to -
500 mV for falling edges).
c) VID is the magnitude of the difference between the input voltage on CK and the input voltage on CK, or between DQS and DQS for differential strobe.
3. DDR2 SDRAM output slew rate test load
Output slew rate is characterized under the test conditions as shown in Figure 4.
Figure 4. Slew Rate Test Load
VDDQ
DUT
DQ
DQS
DQS Output VTT = VDDQ/2
25
Timing
reference
point
RDQS
RDQS
VDDQ
DUT DQ
DQS, DQS
RDQS, RDQS
Output VTT = VDDQ/2
25
Test point
- 22 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
4. Differential data strobe
DDR2 SDRAM pin timings are specified for either single ended mode or differential mode depending on the setting of the EMRS "Enable DQS" mode bit;
timing advantages of differential mode are realized in system design. The method by which the DDR2 SDRAM pin timings are measured is mode depen-
dent. In single ended mode, timing relationships are measured relative to the rising or falling edges of DQS crossing at VREF. In differential mode, these
timing relationships are measured relative to the crosspoint of DQS and its complement, DQS. This distinction in timing methods is guaranteed by design
and characterization. Note that when differential data strobe mode is disabled via the EMRS, the complementary pin, DQS, must be tied externally to VSS
through a 20 to 10 k resistor to insure proper operation.
Figure 5. Data Input (Write) Timing
Figure 6. Data Output (Read) Timing
5. AC timings are for linear signal transitions. See Specific Notes on derating for other signal transitions.
6. All voltages are referenced to VSS.
7. These parameters guarantee device behavior, but they are not necessarily tested on each device.
They may be guaranteed by device design or tester correlation.
8. Tests for AC timing, IDD, and electrical (AC and DC) characteristics, may be conducted at nominal reference/supply voltage levels, but the related
specifications and device operation are guaranteed for the full voltage range specified.
tDS tDH
tWPRE tWPST
tDQSH tDQSL
DQS
DQS
D
DMin
DQS
DQ
DM
tDH
DMin DMin DMin
DDD
DQS
VIL(AC)
VIH(AC)
VIL(AC)
VIH(AC)
VIL(DC)
VIH(DC)
VIL(DC)
VIH(DC)
tDS
tCH tCL
CK
CK
CK/CK
DQS/DQS
DQ
DQS
DQS
tRPST
Q
tRPRE
tDQSQ(max)
tQH tQH
tDQSQ(max)
QQQ
- 23 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
15. Specific Notes for dedicated AC parameters
1. User can choose which active power down exit timing to use via MRS (bit 12). tXARD is expected to be used for fast active power down exit timing.
tXARDS is expected to be used for slow active power down exit timing.
2. AL = Additive Latency.
3. This is a minimum requirement. Minimum read to precharge timing is AL + BL / 2 provided that the tRTP and tRAS(min) have been satisfied.
4. A minimum of two clocks (2 x tCK or 2 x nCK) is required irrespective of operating frequency.
5. Timings are specified with command/address input slew rate of 1.0 V/ns.
6. Timings are specified with DQs, DM, and DQS’s (DQS/RDQS in single ended mode) input slew rate of 1.0V/ns.
7. Timings are specified with CK/CK differential slew rate of 2.0 V/ns. Timings are guaranteed for DQS signals with a differential slew rate of 2.0 V/ns in
differential strobe mode and a slew rate of 1.0 V/ns in single ended mode.
8. Data setup and hold time derating.
[ Table 1 ] DDR2-400/533 tDS/tDH derating with differential data strobe
[ Table 2 ] DDR2-667/800/1066 tDS/tDH derating with differential data strobe
tDS, tDH Derating Values of DDR2-400, DDR2-533 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns 0.8V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
DQ
Siew
rate
V/ns
2.0 125 45 125 45 125 45 - - - - - - - - - - - -
1.5 83 21 83 21 83 21 95 33 - - - - - - - - - -
1.0 0 0 0 0 0 0 12 12 24 24 - - - - - - - -
0.9 - - -11 -14 -11 -14 1 -2 13 10 25 22 - - - - - -
0.8 - - - - -25 -31 -13 -19 -1 -7 11 5 23 17 - - - -
0.7 - - - - - - -31 -42 -19 -30 -7 -18 5 -6 17 6 - -
0.6 - - - - - - - - -43 -59 -31 -47 -19 -35 -7 -23 5 -11
0.5 - - - - - - - - - - -74 -89 -62 -77 -50 -65 -38 -53
0.4 - - - - - - - - - - - - -127 -140 -115 -128 -103 -116
tDS, tDH Derating Values for DDR2-667, DDR2-800, DDR2-1066 (ALL units in ‘ps’, the note applies to entire Table)
DQS,DQS Differential Slew Rate
4.0 V/ns 3.0 V/ns 2.0 V/ns 1.8 V/ns 1.6 V/ns 1.4V/ns 1.2V/ns 1.0V/ns 0.8V/ns
tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH tDS tDH
DQ
Slew
rate
V/ns
2.0 100 45 100 45 100 45 - - - - - - - - - - - -
1.5 67 21 67 21 67 21 79 33 - - - - - - - - - -
1.0 0 0 0 0 0 0 12 12 24 24 - - - - - - - -
0.9 - - -5 -14 -5 -14 7 -2 19 10 31 22 - - - - - -
0.8 - - - - -13 -31 -1 -19 11 -7 23 5 35 17 - - - -
0.7 - - - - - - -10 -42 2 -30 14 -18 26 -6 38 6 - -
0.6 - - - - - - - - -10 -59 2 -47 14 -35 26 -23 38 -11
0.5 - - - - - - - - - - -24 -89 -12 -77 0 -65 12 -53
0.4 - - - - - - - - - - - - -52 -140 -40 -128 -28 -116
- 24 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
[ Table 3 ] DDR2-400/533 tDS1/tDH1 derating with single-ended data strobe
For all input signals the total tDS (setup time) and tDH (hold time) required is calculated by adding the data sheet tDS(base) and tDH(base) value to the
tDS and tDH derating value respectively. Example: tDS (total setup time) =tDS(base) +tDS.
Setup (tDS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min.
Setup (tDS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If
the actual signal is always earlier than the nominal slew rate line between shaded ’VREF(DC) to ac region’, use nominal slew rate for derating value (See
Figure 7 for differential data strobe and Figure 8 for single-ended data strobe.) If the actual signal is later than the nominal slew rate line anywhere
between shaded ’VREF(DC) to ac region’, the slew rate of a tangent line to the actual signal from the ac level to dc level is used for derating value (see Fig-
ure 9 for differential data strobe and Figure 10 for single-ended data strobe)
Hold (tDH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC).
Hold (tDH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If
the actual signal is always later than the nominal slew rate line between shaded ’dc level to VREF(DC) region’, use nominal slew rate for derating value
(see Figure 11 for differential data strobe and Figure 12 for single-ended data strobe) If the actual signal is earlier than the nominal slew rate line any-
where between shaded ’dc to VREF(DC) region’, the slew rate of a tangent line to the actual signal from the dc level to VREF(DC) level is used for derating
value (see Figure 13 for differential data strobe and Figure 14 for single-ended data strobe)
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(AC) at the time of the rising clock
transition) a valid input signal is still required to complete the transition and reach VIH/IL(AC).
For slew rates in between the values listed in Table 1, Table 2 and Table 3 the derating values may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
tDS1, tDH1 Derating Values for DDR2-400, DDR2-533(All units in ‘ps’; the note applies to the entire table)
DQS Single-ended Slew Rate
2.0 V/ns 1.5 V/ns 1.0 V/ns 0.9 V/ns 0.8 V/ns 0.7 V/ns 0.6 V/ns 0.5 V/ns 0.4 V/ns
tDS
1
tDH
1
tDS
1
tDH
1
tDS
1
tDH
1
tDS
1
tDH
1
tDS
1
tDH
1
tDS
1
tDH
1
tDS
1
tDH
1
tDS
1
tDH
1
tDS
1
tDH
1
DQ
Slew
rate
V/ns
2.018818816714612563------------
1.514616712512583428143----------
1.063125428300-21-7-13--------
0.9 - - 31 69 -11 -14 -13 -13 -18 -27 -29 -45 - - - - - -
0.8-----25-31-27-30-32-44-43-62-60-86----
0.7 - - - - - - -45 -53 -50 -67 -61 -85 -78 -109 -108 -152 - -
0.6---------74-96-85-114 -102 -138 -138 -181 -183 -246
0.5-----------128 -156 -145 -180 -175 -223 -226 -288
0.4-------------210 -243 -240 -286 -291 -351
- 25 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 7. IIIustration of nominal slew rate for tDS (differential DQS,DQS)
VSS
tDS tDH
Setup Slew Rate
Setup Slew Rate
Rising Signal
Falling Signal
TF TR
VREF(DC) - VIL(AC)max
TF
=
VIH(AC)min - VREF(DC)
TR
=
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
nominal slew
rate
nominal
slew rate
VREF to ac
region
VREF to ac
region
tDS tDH
tVAC
DQS
DQS
- 26 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 8. IIIustration of nominal slew rate for tDS (single-ended DQS)
VSS
tDS tDH
Setup Slew Rate
Setup Slew Rate
Rising Signal
Falling Signal
TF TR
VREF(DC) - VIL(AC)max
TF
=VIH(AC)min - VREF(DC)
TR
=
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
nominal slew
rate
nominal
slew rate
VREF to ac
region
VREF to ac
region
DQS
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
tDH
tDS
Note1
NOTE : DQS signal must be monotonic between VIL(AC)max and VIH(AC)min.
- 27 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 9. IIIustration of tangent line for tDS (differential DQS, DQS)
VSS
Setup Slew Rate
Setup Slew Rate
Rising Signal
Falling Signal
TF
TR
tangent line[VREF(DC) - VIL(AC)max]
TF
=
tangent line[VIH(AC)min - VREF(DC)]
TR
=
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
tangent
tangent
VREF to ac
region
VREF to ac
region
line
line
nominal
line
nominal
line
tDS tDH tDS tDH
DQS
DQS
- 28 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 10. IIIustration of tangent line for tDS (single-ended DQS)
VSS
Setup Slew Rate
Setup Slew Rate
Rising Signal
Falling Signal
TF
TR
tangent line[VREF(DC) - VIL(AC)max]
TF
=
tangent line[VIH(AC)min - VREF(DC)]
TR
=
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
tangent
tangent
VREF to ac
region
VREF to ac
region
line
line
nominal
line
nominal
line
tDS tDH
DQS
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
tDH
tDS
Note1
NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
- 29 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 11. IIIustration of nominal slew rate for tDH (differential DQS, DQS)
VSS
Hold Slew Rate
Hold Slew Rate
Falling Signal
Rising Signal
TR TF
VREF(DC) - VIL(DC)max
TR
=VIH(DC)min - VREF(DC)
TF
=
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
nominal
slew rate
nominal
slew rate
dc to VREF
region
dc to VREF
region
tDS tDH tDS tDH
DQS
DQS
- 30 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 12. IIIustration of nominal slew rate for tDH (single-ended DQS)
VSS
Hold Slew Rate
Hold Slew Rate
Falling Signal
Rising Signal
TR TF
VREF(DC) - VIL(DC)max
TR
=VIH(DC)min - VREF(DC)
TF
=
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
nominal
slew rate
nominal
slew rate
dc to VREF
region
dc to VREF
region
tDS tDH
DQS
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
tDH
tDS
Note1
NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
- 31 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 13. IIIustration of tangent line for tDH (differential DQS, DQS)
Hold Slew Rate
TF
TR
tangent line [ VIH(DC)min - VREF(DC) ]
TF
=
tangent
tangent
dc to VREF
region
dc to VREF
region
line
line
nominal
line
nominal
line
Falling Signal
Hold Slew Rate tangent line [ VREF(DC) - VIL(DC)max ]
TR
=
Rising Signal
tDS tDH tDS tDH
DQS
DQS
VSS
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
- 32 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 14. IIIustration of tangent line for tDH (single-ended DQS)
Hold Slew Rate
TF
TR
tangent line [ VIH(DC)min - VREF(DC) ]
TF
=
tangent
tangent
dc to VREF
region
dc to VREF
region
line
line
nominal
line
nominal
line
Falling Signal
Hold Slew Rate tangent line [ VREF(DC) - VIL(DC)max ]
TR
=
Rising Signal
NOTE : DQS signal must be monotonic between VIL(DC)max and VIH(DC)min.
tDS tDH
DQS
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
tDH
tDS
Note1
VSS
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
- 33 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
9. tIS and tIH (input setup and hold) derating
[ Table 4 ] Derating values for DDR2-400, DDR2-533
tIS, tIH Derating Values for DDR2-400, DDR2-533
CK, CK Differential Slew Rate
2.0 V/ns 1.5 V/ns 1.0 V/ns Units NOTE
tIS tIH tIS tIH tIS tIH
Command/
Address Slew
rate(V/ns)
4.0 +187 +94 +217 +124 +247 +154 ps 1
3.5 +179 +89 +209 +119 +239 +149 ps 1
3.0 +167 +83 +197 +113 +227 +143 ps 1
2.5 +150 +75 +180 +105 +210 +135 ps 1
2.0 +125 +45 +155 +75 +185 +105 ps 1
1.5 +83 +21 +113 +51 +143 +81 ps 1
1.0 0 0 +30 +30 +60 +60 ps 1
0.9 -11 -14 +19 +16 +49 +46 ps 1
0.8 -25 -31 +5 -1 +35 +29 ps 1
0.7 -43 -54 -13 -24 +17 +6 ps 1
0.6 -67 -83 -37 -53 -7 -23 ps 1
0.5 -110 -125 -80 -95 -50 -65 ps 1
0.4 -175 -188 -145 -158 -115 -128 ps 1
0.3 -285 -292 -255 -262 -225 -232 ps 1
0.25 -350 -375 -320 -345 -290 -315 ps 1
0.2 -525 -500 -495 -470 -465 -440 ps 1
0.15 -800 -708 -770 -678 -740 -648 ps 1
0.1 -1450 -1125 -1420 -1095 -1390 -1065 ps 1
- 34 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
[ Table 5 ] Derating values for DDR2-667, DDR2-800, DDR2-1066
For all input signals the total tIS (setup time) and tIH (hold time) required is calculated by adding the data sheet tIS(base) and tIH(base) value to the tIS
and tIH derating value respectively. Example: tIS (total setup time) = tIS(base) + tIS
Setup (tIS) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIH(AC)min.
Setup (tIS) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VREF(DC) and the first crossing of VIL(AC)max. If
the actual signal is always earlier than the nominal slew rate line between shaded ’VREF(DC) to ac region’, use nominal slew rate for derating value (see
Figure 15). If the actual signal is later than the nominal slew rate line anywhere between shaded ’VREF(DC) to ac region’, the slew rate of a tangent line to
the actual signal from the ac level to dc level is used for derating value (see Figure 16).
Hold (tIH) nominal slew rate for a rising signal is defined as the slew rate between the last crossing of VIL(DC)max and the first crossing of VREF(DC).
Hold (tIH) nominal slew rate for a falling signal is defined as the slew rate between the last crossing of VIH(DC)min and the first crossing of VREF(DC). If
the actual signal is always later than the nominal slewrate line between shaded ’dc to VREF(DC) region’, use nominal slew rate for derating value (see Fig-
ure 17). If the actual signal is earlier than the nominal slew rate line anywhere between shaded ’dc to VREF(DC) region’, the slew rate of a tangent line to
the actual signal from the dc level to VREF(DC) level is used for derating value (see Figure 18).
Although for slow slew rates the total setup time might be negative (i.e. a valid input signal will not have reached VIH/IL(AC) at the time of the rising clock
transition) a valid input signal is still required to complete the transition and reach VIH/IL(AC).
For slew rates in between the values listed in Table 4 and Table 5 the derating values may obtained by linear interpolation.
These values are typically not subject to production test. They are verified by design and characterization.
tIS and tIH Derating Values for DDR2-667, DDR2-800, DDR2-1066
CK, CK Differential Slew Rate
2.0 V/ns 1.5 V/ns 1.0 V/ns Units NOTE
tIS tIH tIS tIH tIS tIH
Command/
Address Slew
rate(V/ns)
4.0 +150 +94 +180 +124 +210 +154 ps 1
3.5 +143 +89 +173 +119 +203 +149 ps 1
3.0 +133 +83 +163 +113 +193 +143 ps 1
2.5 +120 +75 +150 +105 +180 +135 ps 1
2.0 +100 +45 +130 +75 +160 +105 ps 1
1.5 +67 +21 +97 +51 +127 +81 ps 1
1.0 0 0 +30 +30 +60 +60 ps 1
0.9 -5 -14 +25 +16 +55 +46 ps 1
0.8 -13 -31 +17 -1 +47 +29 ps 1
0.7 -22 -54 +8 -24 +38 +6 ps 1
0.6 -34 -83 -4 -53 +26 -23 ps 1
0.5 -60 -125 -30 -95 0 -65 ps 1
0.4 -100 -188 -70 -158 -40 -128 ps 1
0.3 -168 -292 -138 -262 -108 -232 ps 1
0.25 -200 -375 -170 -345 -140 -315 ps 1
0.2 -325 -500 -295 -470 -265 -440 ps 1
0.15 -517 -708 -487 -678 -457 -648 ps 1
0.1 -1000 -1125 -970 -1095 -940 -1065 ps 1
- 35 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 15. IIIustration of nominal slew rate for tIS
VSS
Setup Slew Rate
Setup Slew Rate
Rising Signal
Falling Signal
TF TR
VREF(DC) - VIL(AC)max
TF
=
VIH(AC)min - VREF(DC)
TR
=
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
nominal slew
rate
nominal
slew rate
VREF to ac
region
VREF to ac
region
CK
CK
tIS tIH tIS tIH
- 36 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 16. IIIustration of tangent line for tIS
VSS
Setup Slew Rate
Setup Slew Rate
Rising Signal
Falling Signal
TF
TR
tangent line[VREF(DC) - VIL(AC)max]
TF
=
tangent line[VIH(AC)min - VREF(DC)]
TR
=
tangent
tangent
VREF to ac
region
VREF to ac
region
line
line
nominal
line
nominal
line
CK
CK
tIS tIH tIS tIH
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
- 37 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 17. IIIustration of nominal slew rate for tIH
Hold Slew Rate
Hold Slew Rate
Falling Signal
Rising Signal
TR TF
VREF(DC) - VIL(DC)max
TR
=VIH(DC)min - VREF(DC)
TF
=
nominal
slew rate
nominal
slew rate
dc to VREF
region
dc to VREF
region
CK
CK
tIS tIH tIS tIH
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
- 38 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Figure 18. IIIustration of tangent line for tIH
Hold Slew Rate
TF
TR
tangent line [ VIH(DC)min - VREF(DC)@
TF
=
tangent
tangent
dc to VREF
region
dc to VREF
region
line
line
nominal
line
nominal
line
Falling Signal
Hold Slew Rate tangent line [ VREF(DC) - VIL(DC)max ]
TR
=
Rising Signal
CK
CK
tIS tIH tIS tIH
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
- 39 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
10. The maximum limit for this parameter is not a device limit. The device will operate with a greater value for this parameter, but system performance
(bus turnaround) will degrade accordingly.
11. MIN ( tCL, tCH) refers to the smaller of the actual clock LOW time and the actual clock HIGH time as provided to the device (i.e. this value can be
greater than the minimum specification limits for tCL and tCH). For example, tCL and tCH are = 50% of the period, less the half period jitter ( tJIT(HP))
of the clock source, and less the half period jitter due to crosstalk ( tJIT(crosstalk)) into the clock traces.
12. tQH = tHP - tQHS, where :
tHP = minimum half clock period for any given cycle and is defined by clock HIGH or clock LOW (tCH, tCL).
tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are, separately, due
to data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers.
13. tDQSQ: Consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers as well as output slew rate
mismatch between DQS/ DQS and associated DQ in any given cycle.
14. tDAL = WR + RU{ tRP[ns] / tCK[ns] }, where RU stands for round up.
WR refers to the tWR parameter stored in the MRS. For tRP, if the result of the division is not already an integer, round up to the next highest integer.
tCK refers to the application clock period.
Example: For DDR533 at tCK = 3.75ns with WR programmed to 4 clocks.
tDAL = 4 + (15 ns / 3.75 ns) clocks = 4 + (4) clocks = 8 clocks.
15. The clock frequency is allowed to change during self refresh mode or precharge power-down mode.
16. ODT turn on time min is when the device leaves high impedance and ODT resistance begins to turn on. ODT turn on time max is when the ODT resis-
tance is fully on. Both are measured from tAOND, which is interpreted differently per speed bin. For DDR2-400/533, tAOND is 10 ns (= 2 x 5 ns) after
the clock edge that registered a first ODT HIGH if tCK = 5 ns. For DDR2-667/800, tAOND is 2 clock cycles after the clock edge that registered a first
ODT HIGH counting the actual input clock edges.
17. ODT turn off time min is when the device starts to turn off ODT resistance. ODT turn off time max is when the bus is in high impedance. Both are mea-
sured from tAOFD, which is interpreted differently per speed bin. For DDR2-400/533, tAOFD is 12.5 ns (= 2.5 x 5 ns) after the clock edge that regis-
tered a first ODT LOW if tCK = 5 ns. For DDR2-667/800, if tCK(avg) = 3 ns is assumed, tAOFD is 1.5 ns (= 0.5 x 3 ns) after the second trailing clock
edge counting from the clock edge that registered a first ODT LOW and by counting the actual input clock edges.
18. tHZ and tLZ transitions occur in the same access time as valid data transitions. These parameters are referenced to a specific voltage level which
specifies when the device output is no longer driving (tHZ), or begins driving (tLZ) . Figure 19 shows a method to calculate the point when device is no
longer driving (tHZ), or beginsdriving (tLZ) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as
long as the calculation is consistent. tLZ(DQ) refers to tLZ of the DQS and tLZ(DQS) refers to tLZ of the (U/L/R)DQS and (U/L/R)DQS each treated as
single-ended signal.
19. tRPST end point and tRPRE begin point are not referenced to a specific voltage level but specify when the device output is no longer driving (tRPST),
or begins driving (tRPRE). Figure 19 shows a method to calculate these points when the device is no longer driving (tRPST), or begins driving
(tRPRE) by measuring the signal at two different voltages. The actual voltage measurement points are not critical as long as the calculation is consis-
tent.
Figure 19. Method for calculating transitions and endpoints
tHZ
tRPST end point
T1
T2
VOH + x mV
VOH + 2x mV
VOL + 2x mV
VOL + x mV
tLZ
T2
T1
VTT + 2x mV
VTT + x mV
VTT - x mV
VTT - 2x mV
tLZ,tRPRE begin point = 2*T1-T2tHZ,tRPST end point = 2*T1-T2
- 40 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
20. Input waveform timing tDS with differential data strobe enabled MR[bit10]=0, is referenced from the input signal crossing at the VIH(AC) level to the
differential data strobe crosspoint for a rising signal, and from the input signal crossing at the VIL(AC) level to the differential data strobe crosspoint for
a falling signal applied to the device under test. DQS, DQS signals must be monotonic between VIL(DC)max and VIH(DC)min. See Figure 20.
21. Input waveform timing tDH with differential data strobe enabled MR[bit10]=0, is referenced from the differential data strobe crosspoint to the input sig-
nal crossing at the VIH(DC) level for a falling signal and from the differential data strobe crosspoint to the input signal crossing at the VIL(DC) level for
a rising signal applied to the device under test. DQS, DQS signals must be monotonic between VIL(DC)max and VIH(DC)min. See Figure 20.
Figure 20. Differential input waveform timing - tDS and tDH
22. Input waveform timing is referenced from the input signal crossing at the VIH(AC) level for a rising signal and VIL(AC) for a falling signal applied to the
device under test. See Figure 21.
23. Input waveform timing is referenced from the input signal crossing at the VIL(DC) level for a rising signal and VIH(DC) for a falling signal applied to the
device under test. See Figure 21.
Figure 21. Differential input waveform timing - tIS and tIH
tDS
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
DQS
DQS
tDH
tDS tDH
tIS
CK
CK
tIH
tIS tIH
VDDQ
VIH(AC)min
VIH(DC)min
VREF(DC)
VIL(DC)max
VIL(AC)max
VSS
- 41 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
24. tWTR is at lease two clocks (2 x tCK or 2 x nCK) independent of operation frequency.
25. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the VIH(AC) level to the sin-
gle-ended data strobe crossing VIH/L(DC) at the start of its transition for a rising signal, and from the input signal crossing at the VIL(AC) level to the
single-ended data strobe crossing VIH/L(DC) at the start of its transition for a falling signal applied to the device under test. The DQS signal must be
monotonic between VIL(DC)max and VIH(DC)min.
26. Input waveform timing with single-ended data strobe enabled MR[bit10] = 1, is referenced from the input signal crossing at the VIH(DC) level to the
single-ended data strobe crossing VIH/L(AC) at the end of its transition for a rising signal, and from the input signal crossing at the VIL(DC) level to the
single-ended data strobe crossing VIH/L(AC) at the end of its transition for a falling signal applied to the device under test. The DQS signal must be
monotonic between VIL(DC)max and VIH(DC)min.
27. tCKEmin of 3 clocks means CKE must be registered on three consecutive positive clock edges. CKE must remain at the valid input level the entire
time it takes to achieve the 3 clocks of registration. Thus, after any CKE transition, CKE may not transition from its valid level during the time period of
tIS + 2 x tCK + tIH.
28. If tDS or tDH is violated, data corruption may occur and the data must be re-written with valid data before a valid READ can be executed.
29. These parameters are measured from a command/address signal (CKE, CS, RAS, CAS, WE, ODT, BA0, A0, A1, etc.) transition edge to its respective
clock signal (CK/CK) crossing. The spec values are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as the setup and
hold are relative to the clock signal crossing that latches the command/address. That is, these parameters should be met whether clock jitter is pres-
ent or not.
30. These parameters are measured from a data strobe signal ((L/U/R)DQS/DQS) crossing to its respective clock signal (CK/CK) crossing. The spec val-
ues are not affected by the amount of clock jitter applied (i.e. tJIT(per), tJIT(cc), etc.), as these are relative to the clock signal crossing. That is, these
parameters should be met whether clock jitter is present or not.
31. These parameters are measured from a data signal ((L/U)DM, (L/U)DQ0, (L/U)DQ1, etc.) transition edge to its respective data strobe signal ((L/U/
R)DQS/DQS) crossing.
32. For these parameters, the DDR2 SDRAM device is characterized and verified to support tnPARAM = RU{tPARAM / tCK(avg)}, which is in clock
cycles, assuming all input clock jitter specifications are satisfied.
For example, the device will support tnRP = RU{tRP / tCK(avg)}, which is in clock cycles, if all input clock jitter specifications are met. This means: For
DDR2-667 5-5-5, of which tRP = 15ns, the device will support tnRP = RU{tRP / tCK(avg)} = 5, i.e. as long as the input clock jitter specifications are
met, Precharge command at Tm and Active command at Tm+5 is valid even if (Tm+5 - Tm) is less than 15ns due to input clock jitter.
33. tDAL [nCK] = WR [nCK] + tnRP [nCK] = WR + RU {tRP [ps] / tCK(avg) [ps] }, where WR is the value programmed in the mode register set.
34. New units, ’tCK(avg)’ and ’nCK’, are introduced in DDR2-667 and DDR2-800. Unit ’tCK(avg)’ represents the actual tCK(avg) of the input clock under
operation. Unit ’nCK’ represents one clock cycle of the input clock, counting the actual clock edges.
Note that in DDR2-400 and DDR2-533, ’tCK’ is used for both concepts.
ex) tXP = 2 [nCK] means; if Power Down exit is registered at Tm, an Active command may be registered at Tm+2, even if (Tm+2 - Tm) is 2 x tCK(avg)
+ tERR(2per),min.
35. Input clock jitter spec parameter. These parameters and the ones in the table below are referred to as 'input clock jitter spec parameters' . The jitter
specified is a random jitter meeting a Gaussian distribution.
Parameter Symbol DDR2-667 DDR2-800 DDR2-1066 units NOTE
Min Max Min Max Min Max
Clock period jitter tJIT(per) -125 125 -100 100 -90 90 ps 35
Clock period jitter during DLL locking period tJIT(per,lck) -100 100 -80 80 -80 80 ps 35
Cycle to cycle clock period jitter tJIT(cc) -250 250 -200 200 -180 180 ps 35
Cycle to cycle clock period jitter during DLL locking period tJIT(cc,lck) -200 200 -160 160 -160 160 ps 35
Cumulative error across 2 cycles tERR(2per) -175 175 -150 150 -132 132 ps 35
Cumulative error across 3 cycles tERR(3per) -225 225 -175 175 -157 157 ps 35
Cumulative error across 4 cycles tERR(4per) -250 250 -200 200 -175 175 ps 35
Cumulative error across 5 cycles tERR(5per) -250 250 -200 200 -188 188 ps 35
Cumulative error across n cycles, n = 6 ... 10, inclusive tERR(6-10per) -350 350 -300 300 -250 250 ps 35
Cumulative error across n cycles, n = 11 ... 50, inclusive tERR(11-50per) -450 450 -450 450 -425 425 ps 35
Duty cycle jitter tJIT(duty) -125 125 -100 100 -75 75 ps 35
- 42 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
Definitions :
- tCK(avg)
tCK(avg) is calculated as the average clock period across any consecutive 200 cycle window.
- tCH(avg) and tCL(avg)
tCH(avg) is defined as the average HIGH pulse width, as calculated across any consecutive 200 HIGH pulses.
tCL(avg) is defined as the average LOW pulse width, as calculated across any consecutive 200 LOW pulses.
- tJIT(duty)
tJIT(duty) is defined as the cumulative set of tCH jitter and tCL jitter. tCH jitter is the largest deviation of any single tCH from tCH(avg). tCL jitter is the
largest deviation of any single tCL from tCL(avg).
tJIT(duty) = Min/max of {tJIT(CH), tJIT(CL)}
where,
tJIT(CH) = {tCHi- tCH(avg) where i=1 to 200}
tJIT(CL) = {tCLi- tCL(avg) where i=1 to 200}
- tJIT(per), tJIT(per,lck)
tJIT(per) is defined as the largest deviation of any single tCK from tCK(avg).
tJIT(per) = Min/max of {tCKi- tCK(avg) where i=1 to 200}
tJIT(per) defines the single period jitter when the DLL is already locked.
tJIT(per,lck) uses the same definition for single period jitter, during the DLL locking period only.
tJIT(per) and tJIT(per,lck) are not guaranteed through final production testing.
- tJIT(cc), tJIT(cc,lck)
tJIT(cc) is defined as the difference in clock period between two consecutive clock cycles : tJIT(cc) = Max of |tCKi+1 - tCKi|
tJIT(cc) defines the cycle to cycle jitter when the DLL is already locked.
tJIT(cc,lck) uses the same definition for cycle to cycle jitter, during the DLL locking period only.
tJIT(cc) and tJIT(cc,lck) are not guaranteed through final production testing.
- tERR(2per), tERR (3per), tERR (4per), tERR (5per), tERR (6-10per) and tERR (11-50per)
tERR is defined as the cumulative error across multiple consecutive cycles from tCK(avg).
tCK(avg) =
where N = 200
N
tCKj
j = 1
/N
tCH(avg) =
where N = 200
N
tCHj
j = 1
/(N x tCK(avg))
tCL(avg) =
where N = 200
N
tCLj
j = 1
/(N x tCK(avg))
tERR(nper) =
where
n = 2
i + n - 1
tCKj
j = 1
- n x tCK(avg)
for tERR(2per)
n = 3 for tERR(3per)
n = 4 for tERR(4per)
n = 5 for tERR(5per)
6 n 10 for tERR(6-10per)
11 n 50 for tERR(11-50per)
- 43 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
36. These parameters are specified per their average values, however it is understood that the following relationship between the average timing and the
absolute instantaneous timing holds at all times. (Min and max of SPEC values are to be used for calculations in the table below.)
Example: For DDR2-667, tCH(abs),min = ( 0.48 x 3000 ps ) - 125 ps = 1315 ps
37. tHP is the minimum of the absolute half period of the actual input clock. tHP is an input parameter but not an input specification parameter. It is used
in conjunction with tQHS to derive the DRAM output timing tQH. The value to be used for tQH calculation is determined by the following equation;
tHP = Min ( tCH(abs), tCL(abs) ),
where,
tCH(abs) is the minimum of the actual instantaneous clock HIGH time;
tCL(abs) is the minimum of the actual instantaneous clock LOW time;
38. tQHS accounts for:
1) The pulse duration distortion of on-chip clock circuits, which represents how well the actual tHP at the input is transferred to the output; and
2) The worst case push-out of DQS on one transition followed by the worst case pull-in of DQ on the next transition, both of which are independent of
each other, due to data pin skew, output pattern effects, and p-channel to n-channel variation of the output drivers
39. tQH = tHP - tQHS, where:
tHP is the minimum of the absolute half period of the actual input clock; and tQHS is the specification value under the max column.
{The less half-pulse width distortion present, the larger the tQH value is; and the larger the valid data eye will be.}
Examples:
1) If the system provides tHP of 1315 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 975 ps minimum.
2) If the system provides tHP of 1420 ps into a DDR2-667 SDRAM, the DRAM provides tQH of 1080 ps minimum.
40. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tERR(6-10per) of the input clock. (output derat-
ings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per)min = - 272 ps and tERR(6-10per)max = + 293 ps, then tDQSCK-
min(derated) = tDQSCKmin - tERR(6-10per)max = - 400 ps - 293 ps = - 693 ps and tDQSCKmax(derated) = tDQSCKmax - tERR(6-10per)min = 400
ps + 272 ps = + 672 ps. Similarly, tLZ(DQ) for DDR2-667 derates to tLZ(DQ)min(derated) = - 900 ps - 293 ps = - 1193 ps and tLZ(DQ)max(derated) =
450 ps + 272 ps = + 722 ps.
41. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(per) of the input clock. (output deratings are
relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(per)min = - 72 ps and tJIT(per)max = + 93 ps, then tRPREmin(derated) =
tRPREmin + tJIT(per)min = 0.9 x tCK(avg) - 72 ps = + 2178 ps and tRPREmax(derated) = tRPREmax + tJIT(per)max = 1.1 x tCK(avg) + 93 ps = +
2843 ps.
42. When the device is operated with input clock jitter, this parameter needs to be derated by the actual tJIT(duty) of the input clock. (output deratings are
relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tJIT(duty),min = - 72 ps and tJIT(duty)max = + 93 ps, then tRPSTmin(derated) =
tRPSTmin + tJIT(duty)min = 0.4 x tCK(avg) - 72 ps = + 928 ps and tRPSTmax(derated) = tRPSTmax + tJIT(duty)max = 0.6 x tCK(avg) + 93 ps = +
1592 ps.
43. When the device is operated with input clock jitter, this parameter needs to be derated by { - tJIT(duty)max - tERR(6-10per)max } and { - tJIT(duty)min
- tERR(6-10per)min } of the actual input clock. (output deratings are relative to the SDRAM input clock.)
For example, if the measured jitter into a DDR2-667 SDRAM has tERR(6-10per)min = - 272 ps, tERR(6- 10per)max = + 293 ps, tJIT(duty)min = - 106
ps and tJIT(duty)max = + 94 ps, then tAOFmin(derated) = tAOFmin + { - tJIT(duty)max - tERR(6-10per)max } = - 450 ps + { - 94 ps - 293 ps} = - 837
ps and tAOFmax(derated) = tAOFmax + { - tJIT(duty)min - tERR(6-10per)min } = 1050 ps + { 106 ps + 272 ps } = + 1428 ps.
Parameter Symbol Min Max Units
Absolute clock Period tCK(abs) tCK(avg)min + tJIT(per)min tCK(avg)max + tJIT(per)max ps
Absolute clock HIGH pulse width tCH(abs) tCH(avg)min x tCK(avg)min +
tJIT(duty)min
tCH(avg)max x tCK(avg)max +
tJIT(duty)max ps
Absolute clock LOW pulse width tCL(abs) tCL(avg)min x tCK(avg)min +
tJIT(duty)min
tCL(avg)max x tCK(avg)max +
tJIT(duty)max ps
- 44 -
K4T51163QQ datasheet DDR2 SDRAM
Rev. 1.0
K4T51083QQ
44. For tAOFD of DDR2-400/533, the 1/2 clock of tCK in the 2.5 x tCK assumes a tCH, input clock HIGH pulse width of 0.5 relative to tCK. tAOF,min and
tAOF,max should each be derated by the same amount as the actual amount of tCH offset present at the DRAM input with respect to 0.5.
For example, if an input clock has a worst case tCH of 0.45, the tAOFmin should be derated by subtracting 0.05 x tCK from it, whereas if an input clock
has a worst case tCH of 0.55, the tAOFmax should be derated by adding 0.05 x tCK to it. Therefore, we have;
tAOFmin(derated) = tAC,min - [0.5 - Min(0.5, tCHmin)] x tCK
tAOFmax(derated) = tAC,max + 0.6 + [Max(0.5, tCHmax) - 0.5] x tCK
or
tAOFmin(derated) = Min(tACmin, tACmin - [0.5 - tCHmin] x tCK)
tAOFmax(derated) = 0.6 + Max(tACmax, tACmax + [tCHmax - 0.5] x tCK)
where tCHmin and tCHmax are the minimum and maximum of tCH actually measured at the DRAM input balls.
45. For tAOFD of DDR2-667/800, the 1/2 clock of nCK in the 2.5 x nCK assumes a tCH(avg), average input clock HIGH pulse width of 0.5 relative to
tCK(avg). tAOFmin and tAOFmax should each be derated by the same amount as the actual amount of tCH(avg) offset present at the DRAM input
with respect to 0.5.
For example, if an input clock has a worst case tCH(avg) of 0.48, the tAOFmin should be derated by subtracting 0.02 x tCK(avg) from it, whereas if an
input clock has a worst case tCH(avg) of 0.52, the tAOFmax should be derated by adding 0.02 x tCK(avg) to it. Therefore, we have;
tAOFmin(derated) = tACmin - [0.5 - Min(0.5, tCH(avg)min)] x tCK(avg)
tAOFmax(derated) = tACmax + 0.6 + [Max(0.5, tCH(avg)max) - 0.5] x tCK(avg)
tAOFmin(derated) = Min(tACmin, tACmin - [0.5 - tCH(avg)min] x tCK(avg))
tAOFmax(derated) = 0.6 + Max(tACmax, tACmax + [tCH(avg)max - 0.5] x tCK(avg))
where tCH(avg),min and tCH(avg),max are the minimum and maximum of tCH(avg) actually measured at the DRAM input balls.
NOTE : Tthat these deratings are in addition to the tAOF derating per input clock jitter, i.e. tJIT(duty) and tERR(6-10per). However tAC values used in the equations shown
above are from the timing parameter table and are not derated. Thus the final derated values for tAOF are;
tAOFmin(derated_final) = tAOFmin(derated) + { - tJIT(duty)max - tERR(6-10per)max }
tAOFmax(derated_final) = tAOFmax(derated) + { - tJIT(duty)min - tERR(6-10per)min }
