SELECTOR GUIDE 10-18 SILICON SIGNAL TRANSISTORS t Vcr current 50uA to SmA 5mA to 25mA 25mA to 75mA 75mA to 800mA Voltage . NPN PNP ne NPN PNP 10 GET706 GET708 to GET914 GET3013 20 GET3646 20 GET3014 GET3638 GET3638A to 2N6000 2N6001 2N6000 2N6001 30 2N6002 2N6003 2N6002 2N6003 30 GET2221 40 GET2222 40 GET2221A GET2222A to 2N6004 2N6005 2N6004 2N6005 2N6006 2N6007 2N6006 2N6007 2N6010 2N6011 2N6010 2N6011 50 2N6012 2N6013 2N6012 2N6013 50 GET929 60 GET930 60 GET2484 2N6014 2N6015 2N6014 2N6015 70 2N6016 2N6017 2N6016 2N6017 SELECTOR GUIDE TO-98 SILICON SIGNAL TRANSISTORS Current Veto t 50uA to SmA 5mA to 25mA 25mA to 75mA 75mA to 800mA Voltage NPN PNP NPN PNP 10 2N2926 2N3900A to 2N3854 2N3855 20 2N3856 20 2N3391A D33D21 D29E1 2N3392 D33D22 D29E2 2N3393 2N3394 2N3395 2N5418 2N5354 to 2N5419 2N5355 2N5420 2N5356 2N5172 2N3414 2N3415 2N5998 2N5999 30 2N6008 2N6009 30 2N3854A 2N3855A to 2N3856A 2N3843A 2N3844A 40 2N3845A 40 2N3858 D33D24 D29E4 2N3859 D33D25 D29E5 2N3860 D33D26 D29E6 to 2N4424 2N5365. 033D27 D29E7 2N5366 50 2N5367 50 2N5232A 2N5249A 2N5309 to 2N5310 2N5311 2N3416 60 2N3417 60 2N3858A D29E8 D33D28 D29E8 2N3859A D29E9 D33D29 D29E9 70 2N3860A D29E10 D33D30 D29E10 70 2N5174 2N5175 100 2N5176 10 SILICON SIGNAL SWITCHING & AMPLIFIER COMPLEMENTARY PNP-NPN PAIRS lee Vce(sat} Ccb @ 1V, 50mA @ 50mA, 2.5mA @ 10V, 1MHz ft - Max. Typical Typical Package Specificat:on Min. Max. (V} (pf) (MHz) Outline No. Sheet Ne. 2N5354 oe AS 40 120 5.0 Type 2N5418 40 120 5.0 2N5355 _ 100 300 5.0 _ 2N5419 300 5.0 2N5356 _ J 250 5.0 2N5420 500 5.0 1 Steady State Collector Current SILICON SIGNAL HIGH LEVEL COMPLEMENTARY PNP-NPN PAIRS hee @ 10V-"1MHz fi Type @ 2V, 500mA Max. Typical Package Specification NPN PNP i Min. (pf) (MHz) Outline No. Sheet No. D33D21 D291 : 9.4 D33D22 D29E2 . : 9.4 D33D24 D29E4 9.4 033025 D29E5 : 9.4 033026 O29E6 9.4 D33D27 D29E7 : : 9.4 D33D29 D29E9 9.4 033D30 D29E10 . - 9.4 1 Steady State Collector Current SILICON SIGNAL ECONOMICAL COMPLEMENTARY PNP-NPN PAIRS hre VcE{saT] Ccb Pr @ 10V" 10mA @ 10mA, ImA @ 10V, 1HMz ft . Type Veto @ 25C Ic! Max. Max. Typical Package Specification NPN PNP (mW) (mA) Min. Max. (pf) (MHz) Gutline No. Sheet No 2N5172 2N6076 360 100 500 13.0 1 1 Steady State Collector Current Improved transistor chips and advanced encapsulation techniques make the General Electric epoxy transistors excell in all aspects of reliability. Temperature cycling from 65C to +150C for 300 cycles (30 times more stringent than mil specification) e Moisture resistance8000 hours of storage at 85C, 85% relative humidity Long term stabilityextended operating life tests After 37 million accelerated test hours, the General Electric epoxy signal transistors have demonstrated excellent device reliability based on performance under extreme ranges of environmental, mechanical, thermal and operating stresses. Write for Publication No. 95.28. 13 PNP SILICON SIGNAL MEDIUM CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES VCE lsat] Cob _Vceo @ 10mA @ 10V Specifi- _ hee @ 10V imA Pr tMHz fs Package cation @ -5V Min. Max. Yaz 25C Typical Typical Outline Sheet Type -2mA {V} () (mW) (pF) (MHz) Comments No. No. D29F1 60-120 D29F2 100-200 Sg ies ; 40 ee een D29F3 150-300 ae ah eee and tow D29F4 950-500 ~0.25 360 4.0 150 et D29F5 60-120 "Max: Lo D29F6 100-200 60 D29F7 150-300 2N5354 40-1201 2N5355 100-300" 25 aul 2N5356 . 250-500: Excellent beta linear! 1004 to Soma and low noise. . . 0.252 A 350 : . ei | 2NS365 40-1207 0:25 360 5.0 / sbandw ec seals pose 1 = 2N5366 100-300? 40 41.12 2N5367 250-500! pS 2Ne098 150-300 25 0.252 00 5.0 350 , marr aude 08. 1odeA a 2N6008 250.500" - 0, 4 ,0-. : and 2 TOR. 100RA 1 A077 1 2N6076 100-500? 25 ~0.25 360 5 350 t satu high petomance and low 1 M0AS cost. Gomplement to 2h a Le Thee at Vce==--1V, lc=50mA 2Vce(ret) at Ic-=50mA, lsa=2.5mA 3 hee at Vce=--10V, Ic=10mA 4 hee at Vee=--2V, Ilc=10mA I heh PNP SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS Vc lsat} Cob Vceo @ 500mA @ 10V, Specifi- hee @ --10mA 50mA Pr 1MHz f. NPN Package cation @ -2V Min. Max. Ta: = 25C Typical Typical Compie- Outline Sheet Type -2mA (V} (Vv) (mW) (pF) (MHz) ment Comments No. No. D2961 60-2002 0 - 150 D33D21 : p29E2 450-5004 165 D33D22 D29E4 60-120 120 D33D24 D2SE5 . -100:200 135 D33D25 . 40 500 12 D29E6 150-300 150 D33D26 D25E7 250-560 165 D033D27 D23E9 60-120" _ 120 p33D29 D29E10 100-200" 135 D33D30 1 Pr at Tc=25C, 1000mW ; . . 2 All units available with heatsink which raises Pr to 700mW, Ta==25C. To specify a heatsinked unit, add J1 to part no. Example: A D29E1 with a heatsink is a D29E1J1. Package Outline No. 1.2. See page 20. 3745 min hre at Vce=2V, Ic=500mA 460 min hre at Vce=2V, lc=5S00mA Need to know about reliability? How GE Epoxy Transistors passed 85C @ 85% relative humidity for 8000 hoursor 65C to +150C temperature cycling for 300 cycles? Write for Publication 95.28. 19