Rev.1.00, Apr.15.2003, page 1 of 5
HSL226
Silicon Schottky Barrier Diode for High Speed Switching
REJ03G0016-0100Z
Rev.1.00
Apr.15.2003
Features
• Low reverse current, Low capacitance.
• Extremely small Flat Package (EFP) is suitable for surface mount design.
Ordering Information
Type No. Laser Mark Package Code
HSL226 V EFP
Pin Arrangement
Cathode mark
Mark
1. Cathode
2. Anode
12
V
HSL226
Rev.1.00, Apr.15.2003, page 2 of 5
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Repetitive peak reverse voltage VRRM 25 V
Non-Repetiti ve Peak forward surge current IFSM *1200 mA
Forward current IF50 mA
Junction temperature Tj 125 °C
Storage temperature Tstg −55 to +125 °C
Note:1. 10 ms Sine Wave 1 pulse
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test Condition
VF1 0.33 V IF = 1 mAForward voltage
VF2 0.38 V IF = 5 mA
Reverse current IR0.45 µAV
R = 20 V
Capacitance C 2.80 pF VR = 1 V, f = 1 MHz
Notes:1. Please do not use the soldering iron due to avoid high stress to the EFP package.
2. The material of lead is exposed for cutting plane. Therefor, soldering nature of lead tip part is
considered as unqu estioned. Please kin dl y cons ider so lderi ng nature.
HSL226
Rev.1.00, Apr.15.2003, page 3 of 5
Main Characteristic
10
10
1.0
0.1
0.1 1.0
1.00 0.4 0.60.2 0.8 0 10
10
–4
40
10
–7
3020
10
–5
10
–6
10
–8
10
–1
10
–7
10
–3
10
–5
10
1
f=1MHz
Capacitance C (pF)
Reverse voltage V
R
(V)
Fig.3 Capacitance vs. Reverse voltage
10
–2
10
–8
10
–4
10
–6
10
0
Ta = 25°C
Ta = 75°C
Ta = 25°C
Ta = 75°C
Reverse voltage V
R
(V)
Fig.2 Reverse current vs. Reverse voltage
Reverse current I
R
(A)
Forward voltage V
F
(V)
Fig.1 Forward current vs. Forward voltage
Forward current I
F
(A)
HSL226
Rev.1.00, Apr.15.2003, page 4 of 5
Package Dimensions
Package Code
JEDEC
JEITA
Mass
(reference value)
EFP
—
—
0.0007 g
0.8 ± 0.05
1.0 ± 0.05
0.3 ± 0.05
0.6 ± 0.05
0.47± 0.03
0.13 ± 0.05
As of January, 2003
Unit: mm
HSL226
Rev.1.00, Apr.15.2003, page 5 of 5
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